• 한국지반공학회:학술대회논문집
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• 한국지반공학회 1999년도 봄 학술발표회 논문집
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• pp.373-380
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• 1999

Consolidation settlements of soft clay are often large and potentially damaging to the structures. Currently, large-scale construction projects for airport and harbor etc. are in progress in Korea and many of these structures will be constructed on thick and soft clay layers. For this kind of ground condition, evaluation of consolidation settlement is required at every design and construction stages, and the magnitude of secondary compression appears to be larger than expected. Generally, the magnitude of secondary compression is evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$, relationship. The use of empirical value $C_{a/}$ $C_{c}$ may be economical, fast and powerful tool in estimating secondary consolidation settlement. However, the databases of the $C_{a/}$ $C_{c}$, for typical soft clays in Korea are insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$ on marine clay near the southern sea in Korea. A series of incremental loading consolidation tests with measurement of pore water pressure were performed. It was found that the $C_{a/}$ $C_{c}$ of undisturbed marine clay is 0.0397. This value is similar to that proposed by Mesri and Castro(1987) on inorganic clay and silt. and silt. and silt.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.364-367
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• 2012

본 논문은 Verilator와 C/C++를 이용해 AXI4 BUS 기반 SoC 플랫폼에서 H/W IP 검증을 위한 AXI4 BUS를 구현 하였다. 본 논문 에서는 Verilator와 C/C++를 이용하여 PC 상에 AXI4 BUS를 구현하여 AXI4 BUS 기반의 SoC플랫폼 H/W IP를 검증하는 방법을 제안 한다. 구현한 AXI4 BUS를 이용하여 검증한 AXI4 BUS 기반의 H/W IP가 FPGA 환경에서 동일한 동작을 수행 한다는 것을 보였다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 1999년도 연약지반처리위원회 학술세미나
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• pp.70-77
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• 1999

Consolidation settlements on soft clay are often large and potentially damaging to structures. Currently, large-scale projects are in progress in Korea. These structures will be constructed on both thick and soft clay layers, and so the accurate evaluation of magnitude of settlement is required at every step in design and construction. Especially, secondary compression play an important role in consolidation settlements on soft clay. Generally, the magnitudes of secondary compression are evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$ relationships. The empirical $C_{a/}$ $C_{c}$ may not be only economical, but a fast and powerful tool in estimating secondary consolidation settlement. However, databases of the $C_{a/}$ $C_{c}$ relationship for sites in Korea are currently insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$, on marine clay near the southern sea in Korea. In this study a series of incremental loading consolidation tests (measuring base pore water pressure) are performed. It was found that the $C_{a/}$ $C_{c}$ on undisturbed marine clay equaled 0.0397. This value is similar to the value proposed by Mesri and Castro(1987) for inorganic clay and silt. and silt. and silt.

• 한국결정성장학회지
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• 제12권2호
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• pp.101-109
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• 2002

Hot-wall CVD법으로 SiC/C 경사기능재료를 증착시키는 공정을 열역학적으로 해석하였다. Si-C-H-Cl계에 대한 열역학적 계산을 통해 공정변수(증착온도, 반응기 압력 원료 기체의 C/[Si+C]비와 H/[Si+C]비)가 증착층의 조성과 증착 수율에 미치는 영향을 조사하였고, 이를 통해 SiC/C 경사기능재료 증착에 있어서의 CVD 상평형도와 최적 공정 조건의 범위를 예측할 수 있었다.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 춘계학술발표대회 논문집
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• pp.102-105
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• 2005

The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

• 한국결정성장학회지
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• 제7권2호
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• pp.197-206
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• 1997

6H-SiC 위에 SiC 에피층이 화학 기상 증착(CVD)에 의하여 성장되었다. 성장된 SiC 에피층의 결정구조는 X-선 회절과 Raman 분광을 사용하여 조사되었으며, 이 에피층은 6H-SiC로서 성장되었음을 확인하였다. 수정된 Lely법으로 성장된 한 SiC 결정 분말의 결정구조를 확인하기 위하여 전형적인 SiC polytype들의 X-선 회절상을 계산하였으며, 측정된 X-선 회절상과 비교하여 이 SiC 결정에는 15R-SiC가 약간 혼재되어 있음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• Carbon letters
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• 제6권2호
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• pp.71-78
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• 2005

Anti-oxidation coatings are the key technique for carbon/carbon (C/C) composites used as the thermal structural materials. The microstructure and oxidation behavior of several kinds of high-performance ceramic coatings for C/C composites prepared in Northwestern Polytechnical University were introduced in this paper. It showed that the ceramic coatings such as SiC, Si-$MoSi_2$, SiC-$MoSi_2$, $Al_2O_3$-mullite-SiC and SiC/yttrium silicate/glass coatings possessed excellent oxidation resistance at high temperatures, and some of these coatings were characterized with excellent thermal shock resistance. The SiC-$MoSi_2$ coating system has the best oxidation protective property, which can effectively protect C/C composites from oxidation up to 1973 K. In addition, the protection and failure reasons of some coatings at high temperature were also provided.

• 한국세라믹학회지
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• 제32권6호
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• 한국세라믹학회지
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• 제36권6호
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.