• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.123-127
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• 2002

We have measured the wavelengths of the absorption lines of the $^{13}$ C$_2$H$_2$molecule by using a wavelength meter calibrated against the national optical frequency standard (iodine Stabilized He-Ne Laser, KRISS-R701) in the visible wavelength region. To measure the absolute wavelengths of the absorption lines, the frequency of the laser has been stabilized in the peaks and the sides of the absorption lines of $^{13}$ C$_2$H$_2$. Also, we have proposed the development of a frequency standard source of ITU-T grid using stabilization in the sides of the absorption lines of $^{13}$ C$_2$H$_2$.

• Korean Journal of Optics and Photonics
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• v.15 no.2
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• pp.177-182
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• 2004

We have observed the saturated absorption spectrum of the P(16) line of the V$_1$＋V$_3$ band of $^{13}$ C$_2$H$_2$ molecule by using the external cavity spectroscopy method. The frequency of laser has been stabilized to the saturated absorption spectrum. The relative contrast of the saturation spectrum is about 7 % with respect to the linear absorption and the linewidth is about 1.8 MHz. The frequency fluctuation of the stabilized LD is about $\pm$20 KHz during the sampling time 100 S.

• Journal of the Ergonomics Society of Korea
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• v.16 no.2
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• pp.15-27
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• 1997

Brain potential is described using the mesocolumnar activity defined by averaged firings of excitatory and inhibitory neuron of neocortex. Lagrangian is constructed based on SMNI(Statistical Mechanics of Neocortical Interaction) and then Euler Lagrange equation is obtained. Excitatory neuron firing is assumed to be amplitude- modulated dominantly by the sum of two modes of frequency .omega. and 2 .omega. . Time series of this neuron firing is calculated numerically by Euler Lagrangian equation. I .omega. L related to low frequency distribution of power spectrum, I .omega. H hight frequency, and Sd(standard deviation) were introduced for the effective extraction of the dynamic property in the simulated brain potential. The relative behavior of I .omega. L, I .omega. H, and Sd was found by parameters .epsilon. and .gamma. related to nonlinearity and harmonics respectively. Experimental I .omega L, I .omega. H, and Sd were obtained from EEG of human in rest state and of canine in deep sleep state and were compared with theoretical ones.

• Journal of Magnetics
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• v.6 no.2
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• pp.66-69
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• 2001

The actual magnetic induction waveform of cores in electrical machines is not sinusoidal i.e. higher harmonics are always included. Thus the core loss in actual electrical machines is different from the core loss which is measured by the standard method, because the waveform of magnetic induction should be sinusoidal in the standard testing method. Core loss analysis under higher harmonic induction is always important in electric machine design. In this works we measured the core loss when a hysteresis loop has only one period of an ac minor loop of higher harmonic frequency, depending on the position of the ac minor loop of relative to the fundamental harmonic frequency. From this experiment, the core loss P(B/sub 0/f/sub 0/, B/sub h/, nf/sub 0/)) under a higher harmonic magnetic induction B/sub h/ could be expressed by the linear combination the core loss at fundamental harmonic frequency P/sub c/(B/sub 0/, f/sub 0/), the core loss of ac minor loop at zero induction region of the major hysteresis loop P/sub cL/ (B/sub h/, nf/sub 0/), and the core loss of an ac minor loop in the high induction region of the major hysteresis loop P/sub cH/ (B/sub h/, nf/sub 0/) i.e., P/sub c/, (B/sub 0/, f/sub 0/, B/sub h/, nf/sub 0/)=P/sub c/ (B/sub 0/, f/sub 0/,)+(n-1)[k₁(B/sub 0/) P/sub cL/ (B/sub h/, nf/sub 0/)+(1-k₁(B/sub 0/)) P/sub cH/ (B/sub h/, nf/sub 0/)]. This will be useful formula for electrical machine designers and one of effective methods to predict core loss including higher harmonic induction.

• Proceedings of the KIEE Conference
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• 2007.10a
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• pp.191-192
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• 2007

This paper presents a 900MHz fractional-N frequency synthesizer for radio frequency identification (RFID) reader using $0.18{\mu}m$ standard CMOS process. The IC meets the EPC Class-1 Generation-2 and ISO-18000 Type-C standards. To minimize VCO pulling, the 900MHz VCO is generated by a 1.8GHz VCO followed by a frequency divider. The settling time of the synthesizer is less than $20{\mu}m$. The frequency synthesizer achieves the phase noise of -105.6dBc/Hz at 200kHz offset. The frequency synthesizer occupies an area of $1.8{\times}0.99mm^2$, and dissipates 8mA from a low supply voltage of 1.8V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.33 no.4C
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• pp.321-329
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• 2008

H.264/AVC video coding standard enables a considerably higher improvement in coding efficiency compared with previous standards such as MPEG-2, H.263 and MPEG-4. To achieve this, for each macro-block in H.264/AVC, Rate-Distortion Optimization (RDO) technique is employed to select the best motion vector, reference frame, and macro-block mode. As a result, computational complexity is increased significantly whereas RDO achieve higher improvement. This paper presents fast intra mode selection algorithm based on constraints of frequency characteristics which are derived from intra coding modes of H.264/AVC. First of all, we observe the features of each intra mode through the frequency analysis of image. And then proposed Frequency Error Costs (FECs) are calculated to select the best mode which has minimum cost. Computational complexity is considerably reduced because rate-distortion costs only calculate the candidate modes which are set of best mode and its neighbouring two modes. Experimental results show that proposed algorithm reduces the complexity dramatically maintaining the rate-distortion performance compared with H.264/AVC reference software.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Proceedings of the ESK Conference
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• 1997.04a
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• pp.165-175
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• 1997

Brain potential is described by using Euler Lagrange equation derived from Lagrangian based on SMNI(Statistical Mechanics of Neocortical Interaction). It is assumed that excitatory neuron firing is amplitude-modulated dominantly by the sum of two modes of frequency ${\omega}and 2 {\omega}$ . Time series of this neuron firing is numerically calculated. $I_{L}$related to low frequency distribution of power spectrum, $I_{H}$high frequency, and S(standard deviation) are introduced for the effective extraction of the dynamic property in this simulated brain potential. $I_{L}$,$I_{H}$, and S are obtained from EEG of 4 persons in rest state and are compared with thoretical results. It is of importance in various fields related to human well-being such as comfort-pursued industrial design, psychology, medicine to characterize human emotional states by EEG analysis. The pleasant and unpleasant sensation among various emotional states would be demonstrated to be determined in terms of ${\epsilon}$ and ${\gamma}$ parameters estimated by the simulated $I_{L}$-$I_{H}$-S relations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.