• 제목/요약/키워드: C$_2$H$_2$Frequency standard

검색결과 42건 처리시간 0.026초

13C2H2 분자를 이용한 반도체 레이저 주파수 안정화 및 그 파장 측정 (Frequency stabilization of laser and absolute wavelength measurement of 13C2H2 for DWDM system)

  • 문한섭;서호성;이인원
    • 한국광학회지
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    • 제13권2호
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    • pp.123-127
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    • 2002
  • 본 연구에서는 1550nm 영역에서 $^{13}$C$_2$H$_2$분자의 회전-진동 모드에 대한 분광을 수행하고, 각 전이선들에 대한 파장을 측정하였다. 파장 측정을 위해서 각 흡수선의 피크에서 레이저주파수 변조를 시켜, 변조신호의 1차 하모닉 록킹법으로 레이저의 주파수를 안정화시키고, 광주파수 표준기로 사용되고 있는 요오드 안정화 헬륨-네온 레이저(KRISS-R70l)로 교정한 파장계를 사용하여 3$\times$$10^{-7}$ 의 정확도로 $^{13}$C$_2$H$_2$의 전이선들의 파장을 측정하였다. 그리고, 아세틸렌 분자 흡수선의 옆선에 주파수 안정화하는 방법을 이용하여 ITU-T 그리드의 절대 파장에 일치하는 표준광원 개발은 제안하였다.

1550 nm 영역에서 아세틸렌 분자의 포화흡수분광 (Saturated absorption spectroscopy of 13C2H2 in the 1550 nm region)

  • 문한섭;이원규;서호성
    • 한국광학회지
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    • 제15권2호
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    • pp.177-182
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    • 2004
  • 우리는 외부공진분광법을 이용하여 $^{13}$C$_2$H$_2$ 분자의 회전-진동전이의 V$_1$+V$_3$ 밴드 P(16)전이선의 포화흡수신호를 관측하고, 이 포화 흡수 스펙트럼을 이용하여 1550 nm 영역에서 반도체 레이저 주파수 안정화를 수행하였다. 측정된 포화흡수 스펙트럼의 크기는 선형 흡수에 대해서 약 7%이고, 선폭은 약 1.8 MHz로 측정되었다. 반도체 레이저 주파수를 $^{13}$C$_2$H$_2$ 분자P(16) 전이선에 안정화했을 때 안정화된 레이저의 상대주파수 흔들림은 게이트 시간 0.1 s에서 약 $\pm$20 KHz로 측정되었다.

EEG model by statistical mechanics of neocortical interaction

  • Park, J.M.;Whang, M.C.;Bae, B.H.;Kim, S.Y.;Kim, C.J.
    • 대한인간공학회지
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    • 제16권2호
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    • pp.15-27
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    • 1997
  • Brain potential is described using the mesocolumnar activity defined by averaged firings of excitatory and inhibitory neuron of neocortex. Lagrangian is constructed based on SMNI(Statistical Mechanics of Neocortical Interaction) and then Euler Lagrange equation is obtained. Excitatory neuron firing is assumed to be amplitude- modulated dominantly by the sum of two modes of frequency .omega. and 2 .omega. . Time series of this neuron firing is calculated numerically by Euler Lagrangian equation. I .omega. L related to low frequency distribution of power spectrum, I .omega. H hight frequency, and Sd(standard deviation) were introduced for the effective extraction of the dynamic property in the simulated brain potential. The relative behavior of I .omega. L, I .omega. H, and Sd was found by parameters .epsilon. and .gamma. related to nonlinearity and harmonics respectively. Experimental I .omega L, I .omega. H, and Sd were obtained from EEG of human in rest state and of canine in deep sleep state and were compared with theoretical ones.

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Core Loss Analysis of Non-oriented Electrical Steel Under Magnetic Induction Including Higher Harmonics

  • Cho, Chuhyun;Son, Derac;Cho, Youk
    • Journal of Magnetics
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    • 제6권2호
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    • pp.66-69
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    • 2001
  • The actual magnetic induction waveform of cores in electrical machines is not sinusoidal i.e. higher harmonics are always included. Thus the core loss in actual electrical machines is different from the core loss which is measured by the standard method, because the waveform of magnetic induction should be sinusoidal in the standard testing method. Core loss analysis under higher harmonic induction is always important in electric machine design. In this works we measured the core loss when a hysteresis loop has only one period of an ac minor loop of higher harmonic frequency, depending on the position of the ac minor loop of relative to the fundamental harmonic frequency. From this experiment, the core loss P(B/sub 0/f/sub 0/, B/sub h/, nf/sub 0/)) under a higher harmonic magnetic induction B/sub h/ could be expressed by the linear combination the core loss at fundamental harmonic frequency P/sub c/(B/sub 0/, f/sub 0/), the core loss of ac minor loop at zero induction region of the major hysteresis loop P/sub cL/ (B/sub h/, nf/sub 0/), and the core loss of an ac minor loop in the high induction region of the major hysteresis loop P/sub cH/ (B/sub h/, nf/sub 0/) i.e., P/sub c/, (B/sub 0/, f/sub 0/, B/sub h/, nf/sub 0/)=P/sub c/ (B/sub 0/, f/sub 0/,)+(n-1)[k₁(B/sub 0/) P/sub cL/ (B/sub h/, nf/sub 0/)+(1-k₁(B/sub 0/)) P/sub cH/ (B/sub h/, nf/sub 0/)]. This will be useful formula for electrical machine designers and one of effective methods to predict core loss including higher harmonic induction.

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UHF 대역 RFID 리더 응용을 위한 주파수합성기 설계 (Design of a Frequency Synthesizer for UHF RFID Reader Application)

  • 김경환;오근창;박동삼;유종근
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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    • pp.191-192
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    • 2007
  • This paper presents a 900MHz fractional-N frequency synthesizer for radio frequency identification (RFID) reader using $0.18{\mu}m$ standard CMOS process. The IC meets the EPC Class-1 Generation-2 and ISO-18000 Type-C standards. To minimize VCO pulling, the 900MHz VCO is generated by a 1.8GHz VCO followed by a frequency divider. The settling time of the synthesizer is less than $20{\mu}m$. The frequency synthesizer achieves the phase noise of -105.6dBc/Hz at 200kHz offset. The frequency synthesizer occupies an area of $1.8{\times}0.99mm^2$, and dissipates 8mA from a low supply voltage of 1.8V.

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주파수 특성의 제약 조건들을 이용한 H.264/AVC를 위한 고속 화면 내 모드 선택 방법 (Fast Intra Mode Selection Algorithm for H.264/AVC Using Constraints of Frequency Characteristics)

  • 진순종;박상준;정제창
    • 한국통신학회논문지
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    • 제33권4C호
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    • pp.321-329
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    • 2008
  • H.264/AVC 비디오 부호화 표준은 MPEG-2, H.263 또는 MPEG-4와 같은 기존의 비디오 부호화 표준과 비교하여 상당한 부호화 효율의 향상을 제공한다. 부호화 효율의 향상을 수행하기 위해서 H.264/AVC는 매크로블록 단위로 최적의 움직임 벡터, 참조 화면, 매크로블록 모드를 선택하는데 있어서 율-왜곡 최적화 (Rate-distortion optimization) 기법을 이용한다. 결과적으로 높은 부호화 효율을 제공함과 동시에 복잡도 역시 상당히 증가하였다. 본 논문에서는 화면 내 부호화 모드들에서 나타나는 주파수 특성의 제약 조건들을 이용하여 고속 화면 내 모드 선택 방법을 제안한다. 먼저 영상의 주파수 해석을 통해 H.264/AVC의 화면 내 모드 별 특성을 살펴본다. 다음 제안하는 주파수 에러 비용 (Frequency Error Cost, FEC)을 계산하여 최소 비용을 가지는 모드와 그 주변 모드 2개만을 후보 모드로 선택하고 후보 모드의 율-왜곡 비용만을 계산하여 최적의 화면 내 모드를 결정하여 복잡도를 감소시킨다. 실험 결과는 제안하는 방법이 H.264/AVC와 비교하여 비슷한 율-왜곡 성능을 보이면서 복잡도를 상당히 감소시킴을 보여준다.

위상이동 방법에 의한 다결정 $Ir/H_2SO_4$ 수성 전해질 계면에서 과전위 수소흡착에 관한 해석 (An Analysis on the Over-Potentially Deposited Hydrogen at the Polycrystalline $Ir/H_2SO_4$ Aqueous Electrolyte Interface Using the Phase-Shift Method)

  • 천장호;문경현
    • 전기화학회지
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    • 제3권2호
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    • pp.109-114
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    • 2000
  • 다결정 $Ir/H_2SO_4$수성 전해질 계면에서 중간주파수 구간의 위상이동 변화와 Langmuir흡착등온식 사이의 관계를 교류임피던스 방법 즉 위상이동 방법을 이용하여 연구 조사하였다. 간소화된 계면 등가회로는 전해질저항(Rs), Faraday저항$(R_F)$, 흡착유사용량$(C_\phi)$ 등가회로 요소$(C_P)$의 직렬접속으로 구성된다. 음전위(E)에 대한 위상이동$(-\phi)$과 표면피복율$(\theta)$ 변화율$[\Delta(-\phi)/{\Delta}E,\;{\Delta}{\theta}/{\Delta}E]$을 비교 및 제시하였다. 지연되는 위상이동$(-\phi)$은 음전위(E) 및 주파수(f)에 따르며, $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$이다. 중간주파수(1 Hz)에서 위상이동 변화$(-\phi\;vs.\;E)$는 Langmuir흡착등온식 $(\theta\;vs.\;E)$의 결정에 적용할 수 있는 실험적인 방법이다. 다결정 Ir/0.1 M $H_2SO_4$ 전해질 계면에서 수소의 흡착평형상수(K)와 흡착표준자유에너지 $({\Delta}G_{ads})$는 각각 $2.0\times10^{-4}$와 21.1kJ/mol이며 과전위 수소흡착(OPD H)에 기인한다.

Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application

  • Park, Jeong-Yong;Lee, Jong-Hyun
    • ETRI Journal
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    • 제26권4호
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    • pp.315-320
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    • 2004
  • This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

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Analytical model of EEG by statistical mechanics of neocortical interaction

  • Park, J.M.;M.C. Whang;B.H. Bae;Kim, S.Y.;Kim, C.J.
    • 대한인간공학회:학술대회논문집
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    • 대한인간공학회 1997년도 춘계학술대회논문집
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    • pp.165-175
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    • 1997
  • Brain potential is described by using Euler Lagrange equation derived from Lagrangian based on SMNI(Statistical Mechanics of Neocortical Interaction). It is assumed that excitatory neuron firing is amplitude-modulated dominantly by the sum of two modes of frequency ${\omega}and 2 {\omega}$ . Time series of this neuron firing is numerically calculated. $I_{L}$related to low frequency distribution of power spectrum, $I_{H}$high frequency, and S(standard deviation) are introduced for the effective extraction of the dynamic property in this simulated brain potential. $I_{L}$,$I_{H}$, and S are obtained from EEG of 4 persons in rest state and are compared with thoretical results. It is of importance in various fields related to human well-being such as comfort-pursued industrial design, psychology, medicine to characterize human emotional states by EEG analysis. The pleasant and unpleasant sensation among various emotional states would be demonstrated to be determined in terms of ${\epsilon}$ and ${\gamma}$ parameters estimated by the simulated $I_{L}$-$I_{H}$-S relations.

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DC 스트레스 시간에 따른 ZnO 세라믹 바리스터의 열화기구 (Degradation Mechanism of ZnO Ceramic Varistors with the Time on the DC Stress Test)

  • 소순진;김영진;소병문;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.857-860
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    • 2000
  • The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

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