• 제목/요약/키워드: Bulk diffusion

검색결과 186건 처리시간 0.028초

Design Consideration of Bulk FinFETs with Locally-Separated-Channel Structures for Sub-50 nm DRAM Cell Transistors

  • Jung, Han-A-Reum;Park, Ki-Heung;Lee, Jong-Ho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제8권2호
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    • pp.156-163
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    • 2008
  • We proposed a new $p^+/n^+$ gate locally-separated-channel (LSC) bulk FinFET which has vertically formed oxide region in the center of fin body, and device characteristics were optimized and compared with that of normal channel (NC) FinFET. Key device characteristics were investigated by changing length of $n^+$ poly-Si gate ($L_s$), the material filling the trench, and the width and length of the trench at a given gate length ($L_g$). Using 3-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as that of NC device. The LSC device having the trench non-overlapped with the source/drain diffusion region showed excellent $I_{off}$ suitable for sub-50 nm DRAM cell transistors. Design of the LSC devices were performed to get reasonable $L_s/L_g$ and channel fin width ($W_{cfin}$) at given $L_gs$ of 30 nm, 40 nm, and 50 nm.

촉매형 개시제로 경화된 이관능성 에폭시 수지의 열적 특성 및 파괴인성 (Thermal Properties and fracture Toughness of Difunctional Epoxy Resins Cured by Catalytic Initiators)

  • 박수진;허건영;이재락
    • 폴리머
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    • 제26권3호
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    • pp.344-352
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    • 2002
  • 본 연구에서는 두 가지 열잠재성 양이온 촉매인 triphenyl benzyl phosphoinium hexa-fluoroantimonate (TBPH)와 benzyl 2-methylpyrazinium hexafluoroantimonate (BMPH)를 새로이 합성하였다. 그리핀 TBPH 혹은 BMPH 1 phr에 의해 개시되어진 이관능성 에폭시 수지(diglycidylether of bisphenol A, DGEBA)의 열 및 기계적 특성들을 연구하였다. 그 실험적인 결과들로서, 에폭시/TBPH 시스템은 에폭시/BMPH 시스템 보다 더 높은 경화 온도와 임계응력 세기인자 ($K_{IC}$) 값을 보였다. 이것은 TBPH에서 4개의 페닐기의 느린 열확산 속도와 벌크 구조 때문으로 사료된다. 그러나, Coats-Redfern 방법에 의하여 결정된 분해 활성화 에너지는 TBPH의 경우가 더 낮게 나타났다. 이러한 결과는 TBPH의 입체장애에 의해서 끊어진 짧은 사슬 구조가 발달되었기 때문인 것으로 사료된다.

THE TRANSFER OF CHLORIDE ION ACROSS ANION EXCHANGE MEMBRANE

  • Yu, Zemu;Wang, Hanming;Wang, Erkang
    • 분석과학
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    • 제8권4호
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    • pp.597-601
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    • 1995
  • The transfer of chloride ion across an anion exchange membrane (AEM) was investigated by cyclic voltammetry (CV) and electrochemical impedance spectra. In CV experiment, when the size of the hole in membrane was much smaller than the distance between membrane holes, the Cl anion transfer showed steady state voltammetric behavior. Each hole in membrane can be regarded as a microelectrode and the membrane was equivalent to a microelectrode array in this condition. When the hole in membrane was large or the distance between membrane holes was small, the CV curve of the Cl anion transfer across membrane showed peak shape, which attributed to linear diffusion. In ac impedance measurement, the impedance spectrum of the membrane system was composed of two semicircles at low de bias, corresponding to the bulk characteristics of the membrane and the kinetic process of ion transfer, respectively. The bulk membrane resistance increases with increasing dc bias and only one semicircle was observed at higher dc bias. The parameters related to kinetic and membrane properties were discussed.

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An Amorphous Silicon Local Interconnection (ASLI) CMOS with Self-Aligned Source/Drain and Its Electrical Characteristics

  • Yoon, Yong-Sun;Baek, Kyu-Ha;Park, Jong-Moon;Nam, Kee-Soo
    • ETRI Journal
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    • 제19권4호
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    • pp.402-413
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    • 1997
  • A CMOS device which has an extended heavily-doped amorphous silicon source/drain layer on the field oxide and an amorphous silicon local interconnection (ASLI) layer in the self-aligned source/drain region has been studied. The ASLI layer has some important roles of the local interconnections from the extended source/drain to the bulk source/drain and the path of the dopant diffusion sources to the bulk. The junction depth and the area of the source/drain can be controlled easily by the ASLI layer thickness. The device in this paper not only has very small area of source/drain junctions, but has very shallow junction depths than those of the conventional CMOS device. An operating speed, however, is enhanced significantly compared with the conventional ones, because the junction capacitance of the source/drain is reduced remarkably due to the very small area of source/drain junctions. For a 71-stage unloaded CMOS ring oscillator, 128 ps/gate has been obtained at power supply voltage of 3.3V. Utilizing this proposed structure, a buried channel PMOS device for the deep submicron regime, known to be difficult to implement, can be fabricated easily.

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주유동의 맥동과 엇갈린 2열 분사홀로부터의 막냉각 : 분사비의 영향 (Bulk Flow Pulsations and Film Cooling from Two Rows of Staggered Holes : Effect of Blowing Ratios)

  • 손동기;이준식
    • 대한기계학회논문집B
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    • 제22권9호
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    • pp.1195-1207
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    • 1998
  • Periodic pulsations in the static pressure near turbine surfaces as blade rows move relative to each other is one of the important sources of turbine unsteadiness. The present experiment aims to investigate the effect of the static pressure pulsations on the interaction of film coolant flows from two rows of staggered holes with mainstream and its effect on film cooling heat transfer. Potential flow pulsations are generated by the rotating shutter mechanism installed downstream of the test section, The free-stream Strouhal number based on the boundary layer thickness is in the range of 0.033 - 0.33, and the amplitude of about 10-20%. Measured are time-averaged and phase-averaged velocity variations, pressure variations and temperature distributions of the flow field. Experimental conditions are identified by boundary layer measurements. Injectant behavior is characterized by the measurements of unsteady pressure in the plenum chamber and free-stream static pressure. The film cooling effectiveness is evaluated from the insulated wall temperature measurement. It has been found that bulk flow pulsation provides very large diffusion of the injectants and the effectiveness is significantly reduced by the flow pulsations.

석탄회성형배지(Ash Ball)의 이화학적 특성과 염류집적 및 제거효과 (Physical and Chemical Properties of Coal Fly Ash Ball Substrates, the Salt Accumulation and the Effects of Washing Out Salt with Water)

  • ;강위수;유근창;김일섭
    • 생물환경조절학회지
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    • 제10권2호
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    • pp.88-94
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    • 2001
  • Ash ball 배지의 이화학적특성과 사용배지의 염류집적 및 제거효과를 펄라이트 및 입상암면과 비교하였다. ash ball의 가비중, 진비중, 공극율은 각각 0.93 g.$cm^{-3}$, 2.29 g.$cm^{-3}$, 40.6%, 59.4%로서 그중 가비중은 펄라이트 및 입상암면에 비해 현저히 높았고 가공율은 낮았다. 배지의 포화수분함량(saturation moisture capacity)은 ash ball이 52%, 펄라이트가 71%, 입상암면이 90%로 나타났고, 배수 1시간 후 수분율은 ahs ball이가 21%, 펄라이트가 27%, 입상암면이 80%로 낮아졌다. Ash ball의 입도별 수분율은 소립(3~5 mm)이 대립 (7~15mm)에 비해 5% 정도 높았다. Ash ball의 배드내 수분율은 수직 및 수평방향의 분포가 균일하여 수분확산성이 좋은 것으로 나타났다. ash ball의 pH는 7.6으로 약염기성을 나타내었다. 배지를 침지한 배양액의 pH는 7.6으로 약염기성을 나타내었다. 배지를 침지한 배양액의 pH는 다소 증가하는 경향을 보였으며 EC는 거의 변호가 없었으며, 배지내 무기이온의 흡착은 ash ball과 입상암면은 인산의 흡착이 비교적 많았다. 토마토 재배에 사용된 ash ball의 염류집적은 펄라이트와 비슷하였고 8회 정도의 침수처리로 배지표면에 흡착된 무기염을 대부분 제거할 수 있었다. 위의 결과로부터, ash ball 배지는 보수력은 다소 낮지만 통기성 및 수분확산성이 우수하여 배지내의 수분조절이 용이한 배지임을 알 수 있었다.

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육포 제조시 염의 확산속도 및 건조 특성 (Diffusion of Salt and Drying Characteristics of Beef Jerky)

  • 이신우;이보수;차원섭;박준희;오상룡;조영제;김종국;홍주헌;이원영
    • 한국식품저장유통학회지
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    • 제11권4호
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    • pp.508-515
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    • 2004
  • 육포에 대한 염성분의 침투정도를 알고자 침지온도, 침지액의 농도 그리고 시간에 대한 염침투량을 조사하였다. 시간의 변화에 따른 소금의 확산량은 침지 2시간 내에 평형농도의 $60\%$ 이상으로 급격히 증가하다가 그이후에 증가 폭이 둔화 되는 것으로 나타났고, 침지액의 염농도와 침지 시간은 증가할수록 확산량도 증가하는 것으로 나타났다. 조미 침지 육포의 건조 시간에 따른 수분감소 정도는 열풍건조가 가장 크고 냉풍건조 그리고 천일건조의 순으로 나타났으며, 수분의 함량변화는 열풍건조의 경우 2시간 건조 후 평형수분함량이 되었고, 냉풍건조와 천일건조의 경우 6일 건조 후 평형수분함량에 다다른 것으로 나타났다. 건조 초기 때 건조속도상수가 냉풍건조의 경우 건조일수 2일일 때보다 15배 이상이나 큰 값으로 나타나며, 천일 건조의 경우에는 6배 이상으로 열풍건조의 경우 처음 1시간 내의 건조 상수가 2시간째의 경우보다 약 2배 가까이 큰 값을 나타내었다. 초기 건조기간 내에 냉풍건조의 경우 $80\%$ 이상, 천일건조의 경우 $75\%$ 이상 그리고 열풍의 경우 $50\%$ 이상의 수분이 제거되었다. 육포의 품질특성으로는 기호성에 영향을 줄 수 있는 색도와 조직감을 측정하고 건조방법별로 비교하였다. 냉풍건조가 열풍건조에 비해서는 밝고 가장 선홍색을 띠고 낮은 황색 값을 나타내 열풍건조나 천일건조에 비해 육색소의 산화가 적게 일어난 것으로 판단되어 가장 좋은 품질적 상태를 유지하였고, 조직감을 측정한 결과 열풍건조의 경우 경도와 씹힘성 그리고 인장력에서 높은 값을 나타냈으며, 천일건조와 냉풍건조는 비슷한 경향을 보였으나, 절단 응력에서 천일건조가 높은 값을 나타내었다.

Study on the Kinetics and Mechanism of Grain Growth during the Thermal Decomposition of Magnesite

  • Fu, Da-Xue;Feng, Nai-Xiang;Wang, Yao-Wu
    • Bulletin of the Korean Chemical Society
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    • 제33권8호
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    • pp.2483-2488
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    • 2012
  • The X-ray line broadening technique was used to calculate the grain size of MgO at 1023, 1123, 1223 K respectively either in $CO_2$ or during the thermal decomposition of magnesites in air as well as in vacuum. By referring to the conventional grain growth equation, $D^n=kt$, the activation energy and pre-exponential factor for the process in air are gained as 125.8 kJ/mol and $1.56{\times}10^8\;nm^4/s$, respectively. Ranman spectroscopy was employed to study the surface structure of MgO obtained during calcination of magnesite, by which the mechanism of grain growth was analyzed and discussed. It is suggested that a kind of highly reactive MgO is produced during the thermal decomposition of magnesites, which is exactly the reason why the activation energy of the grain growth during the thermal decomposition of magnesite is lower than that of bulk diffusion or surface diffusion.

Calculation of the Absolute Rate of Human Cu/Zn Superoxide Dismutases from Atomic-Level Molecular Dynamics Simulations

  • Lee, Jin-Uk;Lee, Woo-Jin;Park, Hwang-Seo;Lee, Sang-Youb
    • Bulletin of the Korean Chemical Society
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    • 제33권3호
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    • pp.862-868
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    • 2012
  • Based on the recently derived general expression for the rates of diffusion-controlled reactions, we calculate the rates of dismutation of the superoxide anion radical catalyzed by Cu/Zn superoxide dismutases (SOD). This is the first attempt to calculate the absolute rates of diffusion-controlled enzyme reactions based on the atomiclevel molecular dynamics simulations. All solvent molecules are included explicitly and the effects of the structural flexibility of enzyme, especially those of side chain motions near the active site, are included in the present calculation. In addition, the actual mobility of the substrate molecule is taken into account, which may change as the molecule approaches the active site of enzyme from the bulk solution. The absolute value of the rate constant for the wild type SOD reaction obtained from MD simulation is shown to be in good agreement with the experimental value. The calculated reactivity of a mutant SOD is also in agreement with the experimental result.

Characteristics of tungsten coated graphite using vacuum plasma spraying method

  • Lim, Hyeonmi;Kang, Boram;Kim, Hoseok;Hong, Bong Guen
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.200.1-200.1
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    • 2016
  • Tungsten coatings on the graphite (CX-2320) were successfully deposited using the vacuum plasma spraying (VPS) method. An optimum coating procedure was developed and coating thicknesses of $409{\mu}m$ (without an interlayer) and $378{\mu}m$ (with an interlayer) were obtained with no cracks and no signs of delamination. The mechanical characteristics and microstructure of the tungsten coating layers were investigated using a Vickers hardness tester, FE-SEM, EDS, and XRD. The effect of a titanium interlayer on the properties of the tungsten coating was investigated. It was shown that the titanium interlayer prevented the diffusion of carbon to the tungsten layer, thereby suppressing the formation of tungsten carbide. Vickers hardness data yielded values that were 62.5 ~ 80.46% of those for bulk tungsten, indicating that tungsten coatings on graphite can be utilized as a plasma-facing material. High heat flux tests were performed by using thermal plasma with a maximum flux of $10MW/^2$. Vickers hardness after the heat flux test is performed to see a change in the mechanical properties. The formationof a tungsten carbide and the effect of the titanium interlayer for the diffusion barrier are investigated by using energy dispersion spectroscopy (EDS).

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