• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.673-676
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• 2003

This paper describes the modeling and experimental results for Bulk Acoustic Wave(BAW) Resonator using PolyVinyliDene Fluoride(PVDF). We measured the input reflection coefficient ($S_{11}$) of resonators using vector network analyzer and experimental results were measured fundamental resonance at 2.3 GHz with a return loss of -29 dB. Because of fabricated resonator without etching process, we can confirm a possibility of resonator application as using a PVDF.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.393-397
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• 2003

To investigate the effect of AIN c-axis orientation on the resonance performance of film bulk acoustic wave resonators, solidly mounted resonators with crybtallographically different AIN piezoelectric films were prepared by changing only the bottom electrode surface conditions. As increasing the degree of c-axis texturing, the effective electromechanical coupling coefficient ($\kappa$$\_$eff/)$^2$ in resonators increased gradually. The least 4 degree of full width at half maximum in an AIN(002) rocking curve, which corresponds to $\kappa$$^2$$\_$eff/ of above 5%, was measured to be necessary for band pass filter applications in wireless communication system. The longitudinal acoustic wave velocity of AIN films varied with the degree of c-axis texturing. The velocity of highly c-axis textured AIN film was extracted to be about 10200 n/s by mathematical analysis using Matlab.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1077-1079
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• 2003

This paper describes the development of bulk acoustic wave (BAW) resonators using a PolyVinyliDene Fluoride (PVDF). The resonators have an air gap between a substrate for acoustic isolation without surface micromachining. We measured the resonance frequency and the input reflection coefficient (S$\sub$11/) of resonators using vector network analyzer. The fundamental resonance in this experimental result was measured at 1.4 ㎓ with a return loss of -23.2 ㏈. We can confirm a possibility of resonator application as using a PVDF because it can fabricate the resonator without etching process.

• The Journal of the Acoustical Society of Korea
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• v.3 no.2
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• pp.23-29
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• 1984

In this paper surface acoustic wave beam track changers using symmetric multistrip coupler are designed on the basis of the perturbation theory, and its characteristics are studied. SAW beam track changers, which have the configuratio of the periodic array of metal strips, are designed with the following specifications ; the number of strips : 140, the strip period: 0.25λ, the ratios of the strip width to the period a/p: 0.5, 0.375, 0.25, respectively, and approximately consistent with the theoretical values, and also the bulk wave mode and the 2nd-order effects are suppressed by these track changers.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.193.2-193
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• 2000

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.489-492
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• 2000

Film Bulk Acoustic Wave Resonator(FBAR) used in microwave region was analyzed with Finite Difference Time-Domain Methods(FDTD) in this paper. FBAR have been analyzed with one dimensional Mason model analysis or Finite Element methods(FEM), but the first couldn't analyze effect of area variation and spurious characteristics, the second had difficulty in element separation because of thin electrode. So in this paper FBAR was analyzed by Finite Difference Time-Domain Methods and it's results were transformed to frequency domain using Discrete Fourier Transform.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.12
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• pp.597-600
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size and low cost, high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible suspended FBAR using surface micromachining. Membrane is composed $Si_3N_4SiO_2Si _3N_4$ multi layer and air gap is about 50${\mu}{\textrm}{m}$. Firstly, We perform one dimensional simulation applying transmission line theorem to verify resonance characteristic of the FBAR. Process of the FBAR is used MEMS technology. Fabricated FBAR resonate at 2.4GHz, $K^2_{eff}$ and Q are 4.1% and 1100.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.358-361
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• 2002

체적파 박막형 공진기 (FBAR: Film Bulk Acoustic wave Resonator)소자를 제조하여, 박막의 c축 우선 배향성을 조절하는 것이 FBAR 소자 특성을 확인하였다. 본 연구에서는 MEMS 공정에 의해 Membrane 구조의 FBAR(Film Bulk Acoustic wave Resonator) 소자를 구현하고자 하였다. 이를 위해 Si 기판을 Back-etching 하여 membrane 구조를 제작하였고 압전층으로 ZnO을 Sputtering 공정에 의해 증착 후, 공정 조건에 따른 우선 배향성을 관찰하였다.

• ETRI Journal
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• v.38 no.5
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• pp.988-995
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• 2016

In this paper, we present a new specific and customized interface tool with parameter identification of Modified Butterworth-Van Dyke models for ladder bulk acoustic wave filters. The aforementioned tool is easy to use and flexible because it allows simulations and reengineering to be conducted in an application. A modular design approach is applied to simplify the extension of the proposed tool for different topologies. The proposed tool was validated using measurements from an aluminum-nitride based ladder BAW filter dedicated to the frequency ranges of the Universal Mobile Telecommunications Service and standards and Wideband Code Division Multiple Access.