• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.156-157
• /
• 1998

It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

• Journal of Mushroom
• /
• v.14 no.2
• /
• pp.51-58
• /
• 2016

Basidiomycetous fungi are one of the most potent biodegraders because many of its species grow on dead wood or litter, in environments rich in lignocellulose. For the degradation of lignocellulose, basidiomycetes utilize their lignocellulytic enzymes, which typically include laccase (EC 1.10.3.2), lignin peroxidase (EC 1.11.1.14), xylanase (EC 3.2.1.8), and cellulase (EC 3.2.1.4). In recent years, the practical applications of basidiomycetes have ranged from the textile to the pulp and paper industries, and from food applications to bioremediation processes and industrial enzymatic saccharification of biomass. Recently, spent mushroom substrates of edible mushrooms have been used as sources of bulk enzymes to decolorize synthetic dyes in textile wastewater. In this review, the occurrence, mode of action, general properties, and production of lignocellulytic enzymes from mushroom species will be discussed. We will also discuss the potential applications of these enzymes.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.1
• /
• pp.70-83
• /
• 2001

In this paper, the recent progress of RF MEMS research for wireless/mobile communications is reviewed. The RF MEMS components reviewed in this paper include RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators (TFBARs) to become core components for constructing miniaturized on chip RF transceiver with multi-band and multi-mode operation. Specific applications are also discussed for each of these components with emphasis on for miniaturization, integration, and performance enhancement of existing and future wireless transceiver developments.

• Transactions of the Korean Society of Pressure Vessels and Piping
• /
• v.7 no.2
• /
• pp.21-25
• /
• 2011

Although many defects in PZR heater sleeve have been reported continually from operating experiences in oversea nuclear power plant, utilities get into difficulties in finding appropriate methods for diagnostics of the components due to the limited access or high radiation problems. Recently, as an alternative, diagnostics using Guided Wave Testing(GWT) are proposed and the attention of the methods has been growing gradually because of their long range inspection capability. This study is to investigate the effectiveness of GWT to detect PWSCC in welding points of PZR heater sleeve. Moreover, mode sensitivity analysis of GWT and optimal frequency for the diagnostics of PWSCC are presented by testing the mock-ups specimens that contain artificial flaws.

• Journal of Sensor Science and Technology
• /
• v.27 no.3
• /
• pp.150-155
• /
• 2018

Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage significantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1993.10a
• /
• pp.475-481
• /
• 1993

The objective of this study is to develope the reliability prediction model for Float Rated Integrating Gyroscope( :FRIG) at maximum loading. The equation of motion for FRIG is firstly derived to set up the reliability prediction model. To analysis reliability or all parts of the gyro is not easy due to their complicated structure. Therefore the failure parts are chosen by Failure Mode Effective Analysis (:FMEA). F.E.M is utilized to calculate loads for the selseced rotating assembly and pivot / jewel. The technical reliability is calculated by applying reliability design theory with these results and the performance reliability is sought through distribution estimation with error test data. The bulk reliability of gyroscope is sought by applying the two results. The present prediction results are compared with the accumulation time in good agreement.

• Journal of Institute of Control, Robotics and Systems
• /
• v.11 no.12
• /
• pp.1077-1082
• /
• 2005

In this paper, it is proposed that the method for constituting pressure control system controlled by Direct Drive Valve (DDV). The DDV has a pressure-feedback-loop itself. It can eliminate non-linearity and uncertainty oi hydraulic system such as uncertain discharge coefficient and change of bulk-modulus. However, the internal feedback-loop can not compensate them perfectly. And fixed gain of the DDV's internal feedback-loop is not proper to apply it through wide pressure range. The steady state error and nonlinear characteristic of transient behaviour is observed in the experiment. So another controller is needed for the desirable performance of the system. To compose the controller, the pressure control system controlled by DDV is modeled mathematically and the parameters of the model are identified using signal-compression method. Then sliding mode controller is designed based on mathematical model. Desirable performance of the pressure control system controlled by DDV is obtained.

• Journal of the Korean Magnetic Resonance Society
• /
• v.12 no.2
• /
• pp.74-80
• /
• 2008

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing electron magnetic resonance(EMR), Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of $2{\times}10^{17}$ neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, $A_1$(TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much broader or was much more broadened than that for the unirradiated one. The observed EMR center with the g value of 1.952 in a neutron irradiated Si-doped GaN may be assigned to a Si-related complex donor.

• Journal of the Korean Society of Combustion
• /
• v.17 no.1
• /
• pp.30-36
• /
• 2012

Dynamic characteristics of combustion occurring in various combustion devices have been extensively studied since most of high-performance combustion devices are susceptible to hazardous, unstable combustion that deteriorates combustor's lifetime. One of the most severe unstable combustion phenomena is high-frequency combustion instability in which heat release fluctuations from combustion are coupled to resonant modes of the combustor. Here in this study, characteristics of high-frequency combustion instabilities observed in three different combustion devices have been presented. Lean-premixed combustion instability occurs mainly due to equivalence ratio fluctuations which induce large heat release oscillations at lean conditions. Liquid-fueled combustion also shows high-frequency instability from energy coupling between pressure and heat release oscillations.

• Selected Papers of The Society of Naval Architects of Korea
• /
• v.2 no.1
• /
• pp.129-139
• /
• 1994

This paper describes a design model for the conceptual design of ships. Existing design models have problems such that their operating mode of batch versions cannot reflect the design procedures in reality. Reliability of the results is low because the performance estimations are based mainly on empirical formulas. To improve the problems of existing design models, a new design model has been developed. The new model consists of an interactive user interface, a database of main engines, a database of particulars of existing ships, and ten modules for performance estimations. To develop such a user-oriented system, the concept of graphical user interface (GUI) is adopted.