Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation

  • Doh, Seung-Hyun (School of Electronics Engineering, College of IT Engineering, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electronics Engineering, College of IT Engineering, Kyungpook National University)
  • Received : 2018.05.23
  • Accepted : 2018.05.29
  • Published : 2018.05.31
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Abstract

Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were analyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage significantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.

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References

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