• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.3
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• pp.681-689
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• 1994

A model to predict the onset of significant void (OSV) in vertical flow between parallel plates has been developed. The model was compared to the experimental data of Whittle and Forgan (1967) and Dougherty et al. (1990), showing excellent agreement. The model was also compared with the Saha-Zuber(1974) correlation, which has been widely used in computer codes for nuclear safety analysis. The present theory is more conservative than this correlation, and further shows that, contrary to this correlation, the Stanton number is not solely related to the Peclet number. This may explain the large error margins required for the Saha-Zuber correlation, and also the scatter beyond the error margins specified by the authors. The steady-state OSV heat fluxes for equal and unequal heating cases between parallel plates were compared. The arithmetic mean of heat fluxes for unequal heating cases is less than the heat flux for equal heating cases. The result may imply that OSV is controlled by local thermal parameters rather than bulk parameters.

• Journal of The Korean Astronomical Society
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• v.35 no.4
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• pp.175-185
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• 2002

Almost half of primeval galaxies show P-Cygni type profiles in the Ly$\alpha$ emission line. The main underlying mechanism for the profile formation in these systems is thought to be the frequency re-distribution of the line photons in expanding scattering media surrounding the emission source. A Monte Carlo code is developed to investigate the Ly$\alpha$ line transfer in an optically thick and moving medium with a careful consideration of the scattering in the damping wings. Typical column densities and expansion velocities of neutral hydrogen investigated in this study are $N_{H1}{\~}10^{17-20}\;cm^{-2}$ and ${\Delta}V{\~} 100 km\;s^{-1}$. We investigate the dependence of the emergent profiles on the kinematics and on the column density. Our numerical results are applied to show that the damped Ly$\alpha$ absorbers may possess an expanding H I supershell with bulk flow of ${\~}200 km\;s^{-l}$ and H I column density $N_{H1}{\~}10^{19}\;cm^{-2}$. We briefly discuss the observational implications.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

• Bulletin of the Korean Space Science Society
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• 1993.04a
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• pp.16-16
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• 1993

The Cosmic Mach number M is the ratio of the bulk flow velocity of the galaxrvelocity field on some scale R to the unall scale velocity dispersion within refcions of scale R. Because M is the ratio of two velocities, it is inn-dimansionat and the Here, independent of the amplitude of the power specHim and of the biasplnmeter in the linear theory. We have measured the Mach rnlmber for two observational samples: a spiral galaxy sample(AHM) of Aaronson and hiscoBlaborators with absolute distances measured by the infrared Ttillr-Fisher relatioa and an elliptical galaxy sample(EGALS) of Faber or 0, with distances determined by the relation. The effective depths distances of galaxies from the Local Group of these samples are 1639 km/s and 2862 e/s, respectivelr. The Machnumbers from these observed peculiar velocity Selds He fund as M=0.95 for AHMand M=0.59 for EGALS. We comPBre these calculated Mach numbers with thosefrom meck surweys drawn fuom three cosnulogical medels: the stand8rd biased nh=0.5 CDM modet an open CDM rrudel with gh=0.2, and a medd with thepower-law power specelm P(k)-k-1 and n=1. The Mach rnlmber test can give robust constraints on these cosmelogical nudels whose power spectra have very different shapes at large scales.

• Korean Journal of Soil Science and Fertilizer
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• v.45 no.5
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• pp.717-724
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• 2012

Salt accumulated soil should be reclaimed to lower salt level for crop production. This study was carried out to investigate the characteristics of water flow and transport of mono and divalent solutes on salt accumulated soils with different head pressures. Saturated hydraulic conductivity was measured by constant and falling head methods with maintaining different head pressures. Saturated hydraulic conductivity was influenced by bulk density and organic matter contents in soils, but it had different elusion patterns between saline and sodic soil. While the quantity of water necessary for reclamation could be varies with soil type, it was considered that the supply of one pore volume of water was affordable and economic. Additional head pressure significantly increased the volume of leachate at a given time and it was more effective at low organic matter soils. The results indicate that additional head pressure would be one of the best irrigation practices on desalination method for salt accumulated soils.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• Journal of computational fluids engineering
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• v.21 no.1
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• pp.43-49
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• 2016

Thermal cracking is commonly modeled as plug flow reaction, neglecting the lateral gradients present. In this paper, 2-dimensional computational fluid dynamics including turbulence model and molecular reaction scheme are carried out. This simulation is solved by means of coupled implicit scheme for stable convergence of solution. The reactor is modeled as an isothermal tube, whose length is 1.2 m and radius is 0.01 m, respectively. At first, The radial profile of velocity and temperature at each point are predicted in its condition. Then the bulk temperature and conversion curve along the axial direction are compared with other published data to identify the reason why discussed variations of properties are important to product yield. Finally, defining a new non-dimensional number, Effect of interaction with turbulence, heat transfer and chemical reaction are discussed for design of thermal cracking furnace.

• Transactions of Materials Processing
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• v.15 no.8 s.89
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• pp.591-596
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• 2006

Torsion testing was employed to investigate the deformation and recrystallization behavior of coarse-grained Alloy 718, and the results are compared with the compression testing results. Mechanical testing was conducted on bulk Alloy718 samples within the temperature ranges, $1000^{\circ}C{\sim}1100^{\circ}C$. The strain gradient formed in the torsion specimens resulted in a recrystallization behavior which varied along the radial direction from the center to the surface. The flow curves based on effective stress and effective strain as obtained by Fields and Backofen's isotropic deformation theory and the dynamic recrystallization within the compression tested samples and torsion tested samples are different. The different deformation and recrystallization behavior can be rationalized by the fact that the deformation in the coarse-grained torsion specimens is not uniform and thus the strain gradient within the specimens cannot be analytically predicted by FE simulation. Thus, the extent of recrystallization cannot be properly predicted by the established recrystallization equations based on compression tests.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.08a
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• pp.412-422
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• 1999

Scale defects generated on the strip surface in a tandem finishing mill line are collected from the strip trapped among the production mills by freezing the growing scale on the strip by the melt glass coating and shutting down the line simultaneously. The samples observed of its cross sectional figure showed the process of scale defect formation where the defects are formed at the base metal surface by thicker oxidized scale during each rolling passes. The properties of the oxidized layer growth both at rolling and inter-rolling are detected down sized rolling test simulating carefully the rolling condition of the production line. The thickness of the oxidized layer at each rolling pass are simulated numerically. The critical scale thickness to avoid the defect formation is determined through the expression of mutual relation between oxidized layer thickness and the lanks of the strip called quality for the scale defects. The scale growth of scale less than the critical thickness and also to keep the bulk temperature tuning the water flow rate and cooling time appropriately. Two units of Inerstand Cooler are designed and settled among the first three stands in the production line. Two units of scale defect is counted from the recoiled strip and the results showed distinct decrease of the defects comparing to the conventionaly rolled products.