• Bulletin of the Korean Chemical Society
• /
• 제28권12호
• /
• pp.2396-2400
• /
• 2007

Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

• 반도체디스플레이기술학회지
• /
• 제16권1호
• /
• pp.40-44
• /
• 2017

The effect of weak dielectric silicone dioxide($SiO_2$) embedded in polyfluorene(PFO) emitting layer of polymer-based multi structure OLED was investigated. Indium tin oxide(ITO)/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)/poly(9,9-di-n-octylfluorenyl-2,7-diyl)(PFO)/2,2,2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)/aluminum(Al) structure OLED was fabricated by spin-coating method. Applied electric field causes some effect on $SiO_2$ in PFO layer. Thus, interaction between polymers and affected $SiO_2$ might generate electrical and luminance properties change. Experimental results, show the reduced threshold voltage of 6 V(from 23 V to 17 V). The maximum current density was rather increased from $71A/m^2$ to $610A/m^2$ and maximum brightness was also increased from $7.19cd/m^2$ to $41.03cd/m^2$, 9 and 6 times each. Additionally we obtained colour broadening result due to the increasing of blue-green band emission. Consequently we observed that electrical and luminance properties are enhanced by adding $SiO_2$ and identified the possibility of controlling the emission colour of OLED device according to colour broadening.

• 반도체디스플레이기술학회지
• /
• 제22권1호
• /
• pp.23-27
• /
• 2023

Organic light-emitting diode(OLED) is very thin organic films which are hundreds of nanometers. Unlike bottom-emission OLED(BEOLED), top-emission OLED(TEOLED) emits light out the front, opaque moisture absorbents or metal foils can't be used to prevent moisture and oxygen. And it is difficult to have flexible characteristics with glass encapsulation, so thin film encapsulation which can compensate for those two disadvantages is mainly used. In this study, Al₂O₃ thin films by atomic layer deposition(ALD) were examined by changing the argon gas purge flow rate and we applied this Al₂O₃ thin films to the encapsulation of TEOLED. Ag / ITO / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine / tris-(8-hydroxyquinoline) aluminum/ LiF / Mg:Ag (1:9) were used to fabricate OLED device. The characteristics such as brightness, current density, and power efficiency are compared. And it was confirmed that with a thickness of 40 nm Al₂O₃ thin film encapsulation process did not affect OLED properties. And it was enough to maintain a proper OLED operation for about 9 hours.

• 반도체디스플레이기술학회지
• /
• 제4권2호
• /
• pp.15-19
• /
• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• 조명전기설비학회논문지
• /
• 제14권1호
• /
• pp.1-6
• /
• 2000

Ethyl hydroxy ethyl cellulose의 고분자를 중심으로 하는 유기 결합제를 사용하고 형광체로서 ZnS:Cu와 유전체로$BaTiO_3$ 사용해 screen printing법에 의해 신광원으로서 많은 연구 개발이 집중되고 있는 유기분산형 백라이트 EL(Electroluminescent) 소자를 제조하였다. 제조된 백라이트용 유기 분산형 EL 소자의 특성은 $25[^{\circ}C]$, 100[V], 400[Hz]에서 $1.98[mA/\m^2]$의 전류밀도, O.075[W]의 power consumption, 정전용량 7.l[nF]를 나타내었다. 소자의 휘도는 50~150[V] 사이에서 $20~110[cd/\m^2]$의 밝기를 나타내였으며, 형광체의 색상변화는 ClE에 공인된 색 좌표에 의해 x=0.1711, y=0.3676의 bluish green의 색상을 나타내었다.

• Bulletin of the Korean Chemical Society
• /
• 제29권1호
• /
• pp.139-147
• /
• 2008

New PPV derivatives which contain electron-withdrawing CF3F4phenyl group, poly[2-(2-ethylhexyloxy)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (CF3F4P-PPV), and poly[2-(4-(2-etylhexyloxy)-phenyl)-5-(2,3,5,6-tetrafluoro-4-trifluoromethylphenyl)-1,4-phenylenevinylene] (P-CF3F4P-PPV), have been synthesized by GILCH polymerization. As the result of the introduction of the electron-withdrawing CF3F4phenyl group to the phenyl backbone, the LUMO and HOMO energy levels of CF3F4P-PPV (3.14, 5.50 eV) and P-CF3F4P-PPV (3.07, 5.60 eV) were reduced. The PL emission spectra in solid thin film are more red-shifted over 50 nm and increased fwhm (full width at half maximum) than solution conditions by raising aggregation among polymer backbone due to electron withdrawing effect of 2,3,5,6-tetrafluoro-4-trifluoromethylphenyl group. The EL emission maxima of CF3F4P-PPV and P-CF3F4P-PPV appear at around 530-543 nm. The current density-voltage-luminescence (J-V-L) characteristics of ITO/PEDOT/polymer/Al devices of CF3F4P-PPV and P-CF3F4P-PPV show that turn-on voltages are around 12.5 and 7.0 V, and the maximum brightness are about 82 and 598 cd/m2, respectively. The maximum EL efficiency of P-CF3F4P-PPV (0.51 cd/A) was higher than that of CF3F4P-PPV (0.025 cd/A).