• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.6
• /
• pp.398-403
• /
• 2001

In this paper, effective ionization coefficient for 6H-SiC is determined. Analytical formulas for the parallel plane breakdown voltage of the 6H-SiC p＋n junction are derived by employing the ionization coefficients. The analytical breakdown voltages show good agreement with the numerical results of Dmitriev＇s［3］and the experimental results of Cree Research［9］over the doping range from 10$^{15}$ cm$^{-3}$ to 10$^{18}$ cm$^{-3}$.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.2
• /
• pp.363-369
• /
• 2017

This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.201-202
• /
• 2005

The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.3
• /
• pp.672-677
• /
• 2013

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.10a
• /
• pp.811-814
• /
• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2012.10a
• /
• pp.825-828
• /
• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of Electrical Engineering and Technology
• /
• v.11 no.2
• /
• pp.446-454
• /
• 2016

In this paper, we present experimental results of the soil discharge characteristics as a function of moisture content when a 1.2/50-㎲ lightning impulse voltage is applied. For this study, laboratory experiments were carried out based on factors affecting the transient behavior in soils. The electrical breakdown voltages in soils were measured for a 0-6% range of moisture content for sand and a 0 - 4% range of moisture content for gravel. A test cell with semi-spherical electrodes buried face-to-face in the middle of a cylindrical container was used. The distance separating the electrodes is 100 mm. As a result, the time-lag to breakdown in soils decreases as the amplitude of applied voltage increases. The time-lag to initiation of ionization streamer is decreased, with an increase in the moisture content. However, the formative time-lag is rarely changed. The behavior of soil discharges depend not only on the type of soil and its moisture content but also on the amplitude of the impulse voltage. When the test voltage is applied repeatedly, electrical breakdown occurs along different discrete paths, leading radially away from the injected electrode. i.e., the fact that the ionization streamers propagate in different paths from shot to shot was observed.

• Journal of Electrical Engineering and Technology
• /
• v.3 no.4
• /
• pp.571-575
• /
• 2008

Stator insulation quality assessment for high voltage motors is a major issue for the reliable maintenance of industrial and power plants. To assess the condition of stator insulation, nondestructive tests were performed on the sixty coil groups of twelve motors. After completing the nondestructive tests, the AC voltage applied to the stator winding was gradually increased until insulation failure in order to obtain the breakdown voltage. The stator winding of each motor was classified into five coil groups; one group with healthy insulation and four groups with four different types of artificial defects. To analyze the breakdown voltage statistically, Weibull distribution was employed for the tests on the fifty coil groups of ten motors. The 50th percentile values of the measured breakdown voltages based on the statistical data of the five coil groups of ten motors were 26.1kV, 25.0kV, 24.4kV, 26.7kV and 30.5kV, respectively. Almost all of the failures were located in the line-end coil at the exit of the core slot. The breakdown voltages and the types of defects showed strong relation to the stator insulation tests such as in the case of dissipation factor and ac current. It is shown that the condition of the motor insulation can be determined from the relationship between the probability of failure and the type of defect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.9
• /
• pp.911-915
• /
• 2004

In this study, the electrical characteristics of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated depending on its process and design parameter. In order to verify the experimental data, two-dimensional device simulation was carried out simultaneously. The off- state breakdown voltages of n-channel LDMOSFETs were increased nearly in proportional to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times{10}^{13}/cm^2$ to $1.0\times{10}^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times. The on-resistance was also increased about 76 %. From 2-D simulation, the increase in the breakdown voltage was attributed to a reduction in the maximum electric field of LDMOS imolanted with low dose as well as to a shift toward n+ drain region. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region. The experimental and design data of these high-voltage LDMOS devices can widely applied to design smart power ICs with low-voltage CMOS control and high-voltage driving circuits on the same chip.

• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.165-166
• /
• 2007

In these days $SF_6$ mixtures and alternative gas have been studied because of global warming and liquefying at low temperature and high pressure. At present work the breakdown characteristics of $SF_6/CF_4$ mixture in non-uniform field was performed. The experiments were carried out under positive and negative standard lightning impulse (SLT) voltages. The point-plane electrode was used with 3 mm gap distance in the test chamber. The $SF_6/CF_4$ mixture which contain 20% of $SF_6$ was compared with pure $SF_6$ and $CF_4$ gas. Experimental gas pressure ranged from 0.1 to 0.4 MPa. The breakdown voltage under negative SLI is higher than the breakdown voltage under positive voltage. And the breakdown voltage of $SF_6$ 20%, $CF_4$ 80% mixture is similar to that of pure $SF_6$.