• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
• /
• pp.356-362
• /
• 2004

Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.396-399
• /
• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1193-1196
• /
• 1993

Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

• Transactions on Electrical and Electronic Materials
• /
• 제18권3호
• /
• pp.125-128
• /
• 2017

This study is on how ohmic area etching affects the buffer breakdown voltage of AlGaN/GaN HEMT. The surface morphology of the ohmic metal can be improved by whole etching on the ohmic area. The buffer breakdown voltages of the samples with whole etching on the ohmic area were improved by the suppression of the metal spikes formed under the ohmic contact regions during high-temperature annealing. The samples with selective etching on the ohmic area were investigated for comparison. In addition, the buffer leakage currents were measured on the different radii of the wafer, and the uniformity of the buffer leakage currents on the wafer were investigated by PL mapping measurement.

• Journal of Information Display
• /
• 제2권3호
• /
• pp.66-71
• /
• 2001

MCFEDs (MOSFET-Contoolled Field Emission Displays) were fabricated to evaluate the validity of MCFEA for display application. The electrical properties of FEAs (Field Emitter Arrays), HVMOSFETs (High-Voltage MOSFETs), and MCFEAs (MOSFET-Controlled Field Emitter Arrays) were measured. The extraction gate voltage of the FEAs to obtain the anode current of 10 nA/tip was around 71 V. The breakdown voltages of the HVMOSFETs were above 81 V for all the samples. The I-V characteristics of the MCFEAs showed that the emission currents of the FEAs were well controlled depending on the control gate voltages of the HVMOSFETs. To avoid the harmful effects during the packaging process, the performance of the MCFEDs was evaluated in a high vacuum chamber. The emission images of the MCFEDs were controlled through very-through operation. From the comparison with a conventional FED, it was proven that the poor uniformity of FED could be improved through the integration with HVMOSFET.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
• /
• 제5B권1호
• /
• pp.43-49
• /
• 2005

The high rate of voltage rise (dv/dt) in motor terminals caused by high-frequency switching and impedance mismatches between inverter and motor are known as the primary causes of irregular voltage distributions and insulation breakdowns on stator windings in IGBT PWM inverter-driven induction motors. In this paper, voltage distributions in the stator windings of an induction motor driven by an IGBT PWM inverter are studied. To analyze the irregular voltages of stator windings, high frequency parameters are derived from the finite element (FE) analysis of stator slots. An equivalent circuit composed of distributed capacitances, inductance, and resistance is derived from these parameters. This equivalent circuit is then used for simulation in order to predict the voltage distributions among the turns and coils. The effects of various rising times in motor terminal voltages and cable lengths on the stator voltage distribution are also presented. For a comparison with simulations, an induction motor with taps in the stator turns was made and driven by a variable-rising time switching surge generator. The test results are shown.

• 한국전기전자재료학회논문지
• /
• 제13권1호
• /
• pp.85-93
• /
• 2000

In this paper, the predischarge propagation processes of SF\ulcorner gas stressed by impulse voltages under nonuniform electric field perturbed by a needle protrusion are described. The statistical and formative time-lags and the time interval between leader pulses were investigated on the basis of the predischarge current measured in the gas pressure range of 0.1~0.5 MPa. The predischarge current is closely related to the waveform, amplitude and polarity of applied votages, the gas pressure and the gap geometry. Both the positive and negative predischarge processes in nonuniform electric field develop in a regime of stepwise leader propagation leading to electrical breakdown. The mean of the time interval between leader pulses gives about a factor of 10 higher for the negative than for the positive leader current puls-es. According as the gas pressure increases, the statistical time-lag was almost unchangeable, but the formative time-lag was gradually decreased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.463-466
• /
• 2000

According to the development of the semiconductor micro device technology, IC chip trends the high integrated, low power tendency. Nowadays, it can be showed the tendency of single chip in system level. But in the system level, IC operates by multi power supply voltages. So, semiconductor process is necessary for these multi power operation. Therefore, in this paper, dual gate high voltage device that operate by multi power supply of 5V and 20V fabricated in the 0.5${\mu}{\textrm}{m}$ CMOS process technology and its electrical characteristics were analyzed. The result showed that the characteristics of the 5V device almost met with the SPICE simulation, the SPICE parameters are the same as the single 5V device process. And the characteristics of 20V device showed that gate length 3um device was available without degradation. Its current was 520uA/um, 350uA/um for NMOS, PMOS and the breakdown voltages were 25V, 28V.

• Journal of Electrical Engineering and Technology
• /
• 제13권3호
• /
• pp.1326-1336
• /
• 2018

This paper proposes a numerical approach to predict the critical flashover voltages of air gaps under lightning impulses. For an air gap, the impulse voltage waveform features and electric field features are defined to characterize its energy storage status before the initiation of breakdown. These features are taken as the input parameters of the predictive model established by support vector machine (SVM). Given an applied voltage range, the golden section search method is used to compute the prediction results efficiently. This method was applied to predict the critical flashover voltages of rod-rod, rod-plane and sphere-plane gaps over a wide range of gap lengths and impulse voltage waveshapes. The predicted results coincide well with the experimental data, with the same trends and acceptable errors. The mean absolute percentage errors of 6 groups of test samples are within 4.6%, which demonstrates the validity and accuracy of the predictive model. This method provides an effectual way to obtain the critical flashover voltage and might be helpful to estimate the safe clearances of air gaps for insulation design.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2004년도 하계학술대회 논문집 C
• /
• pp.1897-1899
• /
• 2004

In this paper, in order to analyze the characteristics of degradation by salt water with insulation cover and OC wire(outdoor cross-linked polyethylene insulated wire) used in power receiving system, an experimental apparatus has been designed and fabricated. An insulation cover and OC wire were installed in an experimental apparatus, and degraded in each case of 2%, 5%, 10% salinity during 12 weeks. An optical microscope was used to observe a changing process of sample surface, and an electrical safety was analyzed by measuring dielectric breakdown voltages of samples. As salinity increased, so ununiformity of sample surface increased. The breakdown wasn't produced to 50kV about samples regardless of salinity, testing period.