• Journal of the Korean Society for Precision Engineering
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• v.28 no.1
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• pp.96-101
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• 2011

Under extreme test or operation condition, refrigerator endures complicated stresses state and thermal bowing deformation arises on the sidewall. Shelf rails designed in the inner case provide increased surface area to permit expansion without bowing, and also increase structural rigidity to resist bowing. In this study, we designed six different shelf patterns of refrigerator model and studied the bead on refrigerator deformation using finite element method (FEM). Analysis result shows that increasing the numbers of beads properly in refrigerator is more helpful to reduce thermal bowing deformation. In addition, the beads would decrease stress on refrigerator sidewall. However, vertical beads have no effect to reduce thermal deformation of the bowing.

• Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
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• v.16 no.1
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• pp.68-75
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• 2005

The treatment of sulcus vocalis and vocal bowing has been commonly used Thyroplasty Type surgery or injection within vocal folds such as Teflon, silicone, collagen. However, and treatment has not been acquired satisfactory treatment effect. This study was conducted to demonstrate voice therapy effect using singer's vocal technique and respiratory training. 4 patients (1 male, 3 females) with sulcus vocalis or bowing, with or without scar were selected for this study and we compared with acoustic, aerodynamic measures and stroboscopy observation before and after voice therapy. The results showed that 1) case 1 (48yr, male) with sulcus vocalis decreased F0 (Fundamental Frequency), increase CQ(Close Quotient) and high degree of satisfaction but not improved voice quality after voice therapy. 2) case 2(19yrs, femal) with mild sulcus vocalis improved as normal voice quality after voice therapy. 3) case 3(38yrs, female) with functional bowing showed abnormalvocal contact before therapy whereas CQ was increased after voice therapy. 4) case 4(27yrs, female) with vocal atrophy and vocal bowing changed normal range of Fo and increased CQ after voice therapy. Even though contact area of both vocal folds was increased and lowered F0 after voice therapy, current outcomes revealed that normal voice quality was not regained. These results might signify that it was difficult that vocal folds couldn't be recovery of symmetry and viscoelastic property of mucosal wave through voice therapy. However, it was difficult for this study to maintain voice therapy so that evaluate effect of voice therapy for long-term. Further study will be needed to long-term follow-up for voice therapy with these patients.

• Journal of the Korean Society of Laryngology, Phoniatrics and Logopedics
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• v.14 no.2
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• pp.94-97
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• 2003

Background and Objectives : Bowing of the vocal fold, a bowed edge of the vocal fold results from various disorder causes glottic incompetence resulting in voice disorders. The results of treatment were not satisfactory even though a variety of methods of treatment were applied. The goal of this study is to evaluate of efficacy of the non-surgical, voice therapy in patients with vocal fold bowing. Materials and Method : Twenty two patients of vocal fold bowing not resulting from vocal fold palsy and sulcus vocalis were analyzed. After voice therapy and medical treatment, parameters of perceptual, acoustic, aerodynamic analysis and stroboscopic findings were compared those of pretreatment results. Results and Conclusion : Jitter, shimmer and maximal phonation time were significantly improved and subjective satisfaction was improved in 73% of patients. In the videostroboscopic examination, vocal fold gap was decreased in 27% of patents. The result of this study indicates that voice therapy alone has effect in treatment of vocal fold bowing. Voice therapy is one of the mainstay of treatment of vocal fold bowing.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.776-780
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• 2015

In this paper, we have studied the effect of mechanical polishing to Ga-polar face for reducing the wafer bowing and strain in free-standing GaN. After the mechanical polishing to Ga-polar face, the bowing of the free-standing GaN substrate significantly decreased with increasing the size of diamond slurry, and eventually changed the bowing direction from concave to convex. Furthermore, the full width at half maximum (FWHM) of high-resolution X-ray diffraction (HR-XRD) were decreased, especially the FWHM of (1 0 2) reflection for $1.0{\mu}m$ size of diamond slurry was significantly decreased from 630 to 203 arcsec. In the case, we confirmed that the compressive strain in Ga-polar face was fully released by Raman measurement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.30-34
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• 2016

In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.

• Journal of the Korea institute for structural maintenance and inspection
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• v.10 no.2
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• pp.123-133
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• 2006

The main objective of this study is to develop an optimization algorithm of framed structures with rigid and various semi-rigid connections using the multilevel dynamic programming and the sequential unconstrained minimization techniques (SUMT). The second-order elastic analysis is performed for steel framed structures. The second order elastic analysis is developed based on nonlinear beam-column theory considering the bowing effect. The following semi-rigid connections are considered; double web angle, top-seat angle and top-seat angle with web angle. We considered the three connection models, such as modified exponential, polynomial and three parameter model. The total weight of the structural steel is used as the objective function in the optimization process. The dimensions of steel cross section are selected as the design variables. The design constraints consist of strength requirements for axial, shear and flexural resistance and serviceability requirements.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1213-1222
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• 2018

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.783-790
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• 2017

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.12
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• pp.1165-1174
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• 2016

The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.