Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Control of Bowing in Free-standing GaN Substrate by Using Selective Etching of N-polar Face

N-polar면의 선택적 에칭 방법을 통한 Free-standing GaN 기판의 Bowing 제어

  • Gim, Jinwon (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Son, Hoki (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lim, Tea-Young (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Mijai (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Jin-Ho (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young Jin (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Optic & Display Materials Team, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Hae-Yong (LumiGNtech) ;
  • Yoon, Dae-Ho (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
  • 김진원 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 손호기 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 임태영 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 이미재 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 김진호 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 이영진 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 전대우 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 황종희 (한국세라믹기술원 광.디스플레이소재 센터) ;
  • 이혜용 (루미지엔테크) ;
  • 윤대호 (성균관대학교 신소재공학부)
  • Received : 2015.11.23
  • Accepted : 2015.12.21
  • Published : 2016.01.01
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Abstract

In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.

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