The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
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The Calculation of the Energy Band Gaps of Zincblende GaP1-X NX

질화물계 반도체 GaP1-X NX의 에너지 밴드갭 계산

  • Chung, Ho-Yong ;
  • Kim, Dae-Ik (School of Electrical, Electronic Communication, and Computer Engineering, Chonnam National University)
  • 정호용 (전남대학교 의공학과) ;
  • 김대익 (전남대학교 전기전자통신컴퓨터공학부)
  • Received : 2017.07.20
  • Accepted : 2017.10.18
  • Published : 2017.10.31
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Abstract

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

본 연구에서는 무질서 효과가 고려된, 새로이 가정한 가상 결정 근사법을 갖는 empirical pseudopotential method를 사용하여 온도와 조성비 변화에 따른 3원계 질화물계 화합물 반도체 GaP1-xNx의 휨 매개변수 및 에너지 밴드갭을 계산하였다. 300K의 조성비 구간($0{\leq}x{\leq}0.05$)에서 에너지 밴드갭들이 급격히 감소하며, 해당하는 계산된 휨 매개변수가 13.1eV임을 알 수 있었다. 에너지 밴드갭 계산 결과로부터 굴절률 n과 실수부 유전상수 함수 ${\varepsilon}$를 계산하였고, 에너지 밴드갭 계산 결과는 실험치를 대체로 잘 설명하였다.

Keywords

References

  1. J. Wu, W. Walukiewiczb, K. Yub, J. Ager III, S. Li, E. Haller, H. Lud, and W. Schaff, "Universal bandgap bowing in group-III nitride alloys," Solid State Commun., vol. 127, issue 6, 2003, pp. 411-414. https://doi.org/10.1016/S0038-1098(03)00457-5
  2. J. Kwon, H. Kim, K. Park, Y. Kim, and G. Hoang, "Thermal Characteristics of Designed Heat Sink for 13.5W COB LED Down Light," J. of the Korea Institute of Electronic Communication Sciences, vol. 9, no. 5, 2014, pp. 561-566. https://doi.org/10.13067/JKIECS.201.9.5.561
  3. B. Yoon, J. Song, J. Park, and H. Kwon, "Development of 1.2kW LED Light with Water-Air Circulation," J. of the Korea Institute of Electronic Communication Sciences, vol. 10, no. 5, 2015, pp. 615-622. https://doi.org/10.13067/JKIECS.2015.10.5.615
  4. C. Zhao, T. Wei, N. Li, S. Wang, and K. Lu, "The evolution of the band gap energy of the P-rich $GaN_{X}P_{1-X}(0{\leq}x{\leq}0.05)$ on composition and temperature," Physica B: Physics of Condensed Matter, vol. 427, Oct. 2013, pp. 58-61. https://doi.org/10.1016/j.physb.2013.06.029
  5. C. Zhao, T. Wei, X. Sun, S. Wang, and K. Lu, "The factors contributing to the band gap bowing of the dilute nitride GaNP alloy," Appl. Phys. A, vol. 117, issue 3, Nov. 2014, pp. 1447-1450. https://doi.org/10.1007/s00339-014-8572-3
  6. H. P. Xin , R. Welty, Y. Hong, and C. Tu, "Gas-source MBE growth of Ga(In)NP/GaP structures and their applications for red light-emitting diodes," J. of Cryst. Growth, vol. 227-228, July 2001, pp. 558-561. https://doi.org/10.1016/S0022-0248(01)00771-0
  7. I. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. Chen, H. Xin, Y. Hong, and C. Tu, "Analysis of band anticrossing in $GaN_{X}P_{1-X}$ alloys," Phys Rev B, vol. 70, no. 8, 2004, pp. 085209-1-5. https://doi.org/10.1103/PhysRevB.70.085209
  8. L . Peternai, J. Kovac, J. Jakabovic, A.Vincze, A. Satka, and, V. Gottschalch, "Optical and structural investigation of $GaN_{X}P_{1-X}/GaP$ structures for light emitting diodes," Vacuum, vol. 80, issues 1-3, 2005, pp. 229-235. https://doi.org/10.1016/j.vacuum.2005.08.004
  9. A. Pulzara-Mora, M. Melendez-Lira, S. Jimenez-Sandoval, and M. Lopez-Lopez, "Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering," Vacuum, vol. 80, issue 5, Jan. 2006 pp. 468-474. https://doi.org/10.1016/j.vacuum.2005.07.039
  10. B. Liou and C. Liu, "Electronic and structural properties of zincblende $Al_{X}In_{1-X}N$," Optics Commun., vol. 274, no. 2, June 2007, pp. 361-365. https://doi.org/10.1016/j.optcom.2007.02.040
  11. R. Senger and K. Bajaj,"Photoluminescence excitonic linewidth in GaAsN alloys," J. of Appl. Phys., vol. 94, no. 12, 2003, pp. 7505-7508. https://doi.org/10.1063/1.1628405
  12. J. Ibanez1, R. Oliva1, M. De la Mare, M. Schmidbauer, S. Hernandez, P. Pellegrino, D. Scurr, R. Cusco, L. Artus, M. Shafi, R. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier, "Structural and optical properties of dilute InAsN grown by molecular beam epitaxy," J. of Appl. Phys., vol. 108, no. 10, 2010, pp. 103504-1-8. https://doi.org/10.1063/1.3509149
  13. C. Z. Zhao, N. Li ,T. Wei, and C. Tang, "Temperature and Composition Dependence of $GaN_{X}As_{1-X}(0 before and after Annealing," Chin. Phys. Lett., vol. 28, no. 12, 2011, pp. 127801-1-4. https://doi.org/10.1088/0256-307X/28/12/127801
  14. H. Benaissa, A. Zaoui, and M. Ferhat, "First principles calculations for dilute InAs1-xNx alloys," J. of Appl. Phys., vol. 102, no. 11, 2007, pp. 113712-1-5. https://doi.org/10.1063/1.2821144
  15. W. Shan, W. Walukiewicz, K. Yu, J. Ager III, E. Haller, J. Geisz, D. Friedman, J. Olson, S. Kurtz, H. Xin, and C.. Tu, "Band anticrossing in III-N-V alloys," Phys Status Solidi B, vol. 223, issue 1, Jan. 2001, pp. 75-85. https://doi.org/10.1002/1521-3951(200101)223:1<75::AID-PSSB75>3.0.CO;2-1
  16. S. Dudiy, Alex Zunger, M. Felici, A. Polimeni, M.Capizzi, H. Xin, and C.. Tu,"Nitrogen-induced perturbation of the valence band states in $GaP_{1-X}N_{X}$ alloys," Phys. Rev. B, vol. 74, no. 15, Oct. 2006, pp. 155303-1-6. https://doi.org/10.1103/PhysRevB.74.155303
  17. H. Chung and D. Kim, "The Calculation of the Energy Band Gaps of Zincblende InAs1-xNx on Temperature and Composition," J. of the Korea Institute of Electronic Communication Sciences, vol. 11, no. 12, 2016, pp. 1165-1174. https://doi.org/10.13067/JKIECS.2016.11.12.1165
  18. H. Chung, "Energy Band Gaps and Bowing Parameters of Zincblende $GaAs_{1-X}N_X$," Sae Mulli, vol. 64, no. 9, 2014, pp. 868-876. https://doi.org/10.3938/NPSM.64.868
  19. H. Chung, "Energy Band Structure of InxGa1-xAs," Sae Mulli, vol. 30, no. 6, 1990, pp. 704-709.
  20. H. Chung and M. An, "Energy Band Structures of Graded Gap Superlattices and Quaternary Compound Semiconductors," Sae Mulli, vol. 32, no. 5, 1992, pp. 693-702.
  21. R. Kudrawiec, J. Misiewicz, Q.Zhuang, A. Godenir, and A. Krier, "Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys," Appl. Phys. Lett., vol. 94, no. 15, 2009, pp. 151902-1-3. https://doi.org/10.1063/1.3117239
  22. I. Vurgaftman, J. Meyer, and L. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. of Appl. Phys., vol. 89, no. 11, 2001, pp. 5815-5875. https://doi.org/10.1063/1.1368156
  23. A. Gueddim, R. Zerdoum, and N .Bouarissa, "Alloy composition and optoelectronic properties of dilute $GaSb_{1-X}N_{X}$ by pseudo-potential calculations," Physica B, vol. 389, no. 2, 2007, pp. 335-342. https://doi.org/10.1016/j.physb.2006.07.008
  24. W. Kara Mohamed, F. Mezrag, M. Boucenna, and N. Bouarissa, "Electronic structure and related properties for quasi-binary $(GaP)_{1-X}(ZnSe)_X$ crystals," J. of Structural Chem., vol. 54, no. 6, Nov. 2013, pp. 1004-1011. https://doi.org/10.1134/S0022476613060024
  25. N. Bouarissa, "Optical and vibrational properties of quasi-binary $(GaSb)_{1-X}(InAs)_X$ crystals," Materials Lett., vol. 60, issue 24, Oct. 2006, pp. 2974-2978. https://doi.org/10.1016/j.matlet.2006.02.026