• 제목/요약/키워드: Bottom electrode

검색결과 349건 처리시간 0.037초

트랜치 에미터 전극을 이용한 수직형 NPI 트랜치 게이트 IGBT의 전기적 특성 향상 연구 (Improvement of Electrical Characteristics of Vertical NPT Trench Gate IGBT using Trench Emitter Electrode)

  • 이종석;강이구;성만영
    • 한국전기전자재료학회논문지
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    • 제19권10호
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    • pp.912-917
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    • 2006
  • In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

패드 인쇄 기법을 이용하여 곡면상에 구현된 PEMS 디바이스 (Pad Printed PEMS Device Printed on a Curved Surface)

  • 이택민;최현철;노재호;김동수
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1087-1090
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    • 2008
  • This paper presents the electro-luminescence (EL) display lamp which is patterned on a curved surface by the pad printing method. The printing methods, including the gravure, screen, flexo, inkjet, and pad printing, have an advantage of one-step direct patterning. However, in general, the printing and semi-conductor process, except pad printing method, cannot be applied for patterning on a curved surface. Thus, in this paper, we used pad printing method for patterning an EL display lamp on a curved surface. The EL display lamp consists of 5 layers: Bottom electrode; Dielectric layer; Phosphor; Transparent electrode; Bus electrode. Finally, we printed EL display lamp on a dish, which has a radius of curvature 80mm. The EL display lamp was driven at AC 200V of 1kHz.

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마이크로머시닝 기술을 이용한 3차원 마이크로 챔버형 글루코스 센서의 개발 (Development of Three-dimensional Chamber-type Glucose Sensor Using Micromachining Technology)

  • 김성호;김창교
    • 한국산학기술학회논문지
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    • 제6권1호
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    • pp.24-28
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    • 2005
  • 3차원 실리콘 챔버를 갖는 $15.8{\times}15.8 mm^2$크기의 칩을 바이오 센서용으로 마이크로머시닝 기술을 이용하여 개발하였다. 비등방성 식각기술을 이용하여 (100)방향의 p형 실리콘 웨이퍼위에 마이크로 챔버를 형성하였다. 마이크로 챔버를 갖는 웨이퍼와 백금전극이 도포된 Pyrex 유리를 DGF-48S 접착제를 이용하여 접합하였다. 백금전극과 Ag/AgCl 기준전극에 의한 전기화학적 특성을 조사하였다.

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스퍼터링법을 이용한 OLED용 Al 전극의 제작 (Preparing of the AI electrode for OLED by Sputtering Methode)

  • 김경환;금민종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.72-75
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    • 2005
  • In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

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Uniformity Improvement of Micromirror Array for Reliable Working Performance as an Optical Modulator in the Maskless Photolithography System

  • Lee, Kook-Nyung;Kim, Yong-Kweon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권2호
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    • pp.132-139
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    • 2001
  • We considered the uniformity of fabricated micromirror arrays by characterizing the fabrication process and calculating the appropriate driving voltages of micromirrors used as virtual photomask in maskless photolithography. The uniformity of the micromirror array in terms of driving voltage and optical characteristics is adversely affected by factors, such as the air gap between the bottom electrode and the mirror plate, the spring shape and the deformation of the mirror plate or torsion spring. The thickness deviation of the photoresist sacrificial layer, the misalignment between mirror plate and bottom electrode, the aluminum deposition condition used to produce the spring and the mirror plate, and initial mirror deflection were identified as key factors. Their importance lies in the fact that they are related to air gap deviations under the mirror plate, asymmetric driving voltages in left and right mirror directions, and the deformation of the Al sring or mirror plate after removal of the sacrificial layer. The plasma ashing conditions used for removing the sacrificial layer also contributed to the deformation of the mirror plate and spring. Driving voltages were calculated for the pixel operation of the micromirror array, and the non-uniform characteristics of fabricated micromirrors were taken into consideration to improve driving performance reliability.

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Microelectromechnical system 소자 제작을 위한 유기금속분해법에 의한 압전성 PZT(53/47)박막의 증착 (Deposition of Piezoelectric PZT(53/47) Film by Metalorganic Decomposition for Micro electro mechanical Device)

  • 윤영수;정형진;신영화
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.458-464
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    • 1998
  • This paper gives characterization of substrate and PZT(53/47) thin film deposited by metalorganic decomposition, which is concerned in deposition process and device fabrication process, to fabricate micro electro mechanical system (MEMS) device with piezoelectric material. The PZT thin films deposited by MOD at 700^{\circ}C$ for 30 minutes had a polycrystallinity, that is, no substrate dependence, while different interface were developed depending on the bottom electrodes. Such a structural variation could influence on not only the properties of the PZT film but also etching process for fabricating MEMS devices. Therefore the electrode structure is a very important factor in the deposition of the PZT film during etching process by HF acid for MEMS device with piezoelectric material. Piezoelectric coefficients of the PZT films on the different substrates were 40 and 80 pm/V at an applied voltage of 4V. Based in these results, it was possible for deposition of the PZT film by MOD to apply MEMS device fabrication process based on piezoelectricity after selection of proper bottom electrode.

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Ru CMP 공정에서의 화학액과 연마 입자 농도에 따른 연마율과 표면 특성 (Effects of Chemical and Abrasive Particles for the Removal Rate and Surface Microroughness in Ruthenium CMP)

  • 이상호;강영재;박진구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1296-1299
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    • 2004
  • MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

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