• Title/Summary/Keyword: Boron Transport

Search Result 38, Processing Time 0.034 seconds

THE IMPLEMENTATION OF BORON TRANSPORT EQUATION INTO A REACTOR COMPONENT ANLAYSIS CODE (원자로 기기 열수력 해석 코드에서 붕소 수송 방정식의 구현)

  • Park, Ik Kyu;Lee, Seung Wook;Yoon, Han Young
    • Journal of computational fluids engineering
    • /
    • v.18 no.4
    • /
    • pp.53-60
    • /
    • 2013
  • The boron transport model has been implemented into the CUPID code to simulate the boron transport phenomena of the PWR. The boron concentration conservation was confirmed through a simulation of a conceptual boron transport problem in which water with a constant inlet boron concentration injected into an inlet of the 2-dimensional vertical flow tube. The step wise boron transport problem showed that the numerical diffusion of the boron concentration can be reduced by the second order convection scheme. In order to assess the adaptability of the developed boron transport model to the realistic situation, the ROCOM test was simulated by using the CUPID implemented with the boron transportation.

Effect of Boron Content and Temperature on Interactions and Electron Transport in BGaN Bulk Ternary Nitride Semiconductors

  • Bouchefra, Yasmina;Sari, Nasr-Eddine Chabane
    • Transactions on Electrical and Electronic Materials
    • /
    • v.18 no.1
    • /
    • pp.7-12
    • /
    • 2017
  • This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

Transport properties of boron/nitrogen/phosphorus binary doped graphene nanoribbons: An ab initio study

  • Kim, Seong Sik;Kim, Han Seul
    • Proceeding of EDISON Challenge
    • /
    • 2013.04a
    • /
    • pp.273-277
    • /
    • 2013
  • We apply a density functional theory (DFT) and DFT-based non-equilibrium Green's function approach to study the electronic and transport properties of graphene nanoribbons (GNRs) co-doped with boron-nitrogen, nitrogen-phosphorus and boron-phosphorus. We analyze the structures and charge transport properties of co-doped GNRs and particularly focus on the novel effects that are absent for the single N-, B-, or P-doped GNRs. It is found that co-doped GNRs tend to be doped at the edges and the electronic structures of co-doped GNRs are very sensitive to the doping sites. Also, in case of B-N and B-P co-doped GNRs, conductance dips of single-doped GNRs disappeared with the disappearance of localized states associated with doped atoms. This may lead to a possible method of band engineering of GNRs and benefit the design of graphene electronic devices.

  • PDF

Evaluation of Neutron Shielding Performance of Polyethylene Coated Boron Carbide-Incorporated Cement Paste using MCNP Simulation (MCNP 시뮬레이션을 통한 폴리에틸렌 코팅 탄화붕소 혼입 시멘트 페이스트의 중성자 차폐 성능 평가)

  • Park, Jae-Yeon;Jee, Hyeon-Seok;Bae, Sung-Chul
    • Proceedings of the Korean Institute of Building Construction Conference
    • /
    • 2018.11a
    • /
    • pp.114-115
    • /
    • 2018
  • To develop an effective shielding material for spent fuel that emits fast neutrons is necessary. In this study, thermal neutron and fast neutron shielding performance of polyethylene coated boron carbide-incorporated cement paste was quantitatively analyzed by Monte Carlo N-Particle transport code (MCNP) simulations. As the results of the simulations, fast neutrons were effectively shielded through large quantity of hydrogen and boron elements in polyethylene and boron carbide.

  • PDF

Effect of applied magnetic fields on Czochralski single crystal growth (Part II) (Czochralski 단결성 성장특성제어를 위한 자장형태에 관한 연구 (Part 2))

  • Chang Nyung Kim
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.4 no.1
    • /
    • pp.46-56
    • /
    • 1994
  • The characteristics of flows, temperatures, concentrations of the boron are numerically studied when uniform axial magnetic fields are applied in the Czechralski crucible. The to governing factors to the flow regimes are buoyancy, thermocapillarity, centrifugal forces, magnetic forces, diffusion coefficient and segregation coefficient of the boron. Since the concentration of the boron is so low that buoyancy effects are negligible, it cannot affect the flow and temperature fields. From the fact that the flow fields are rotationally symmetric, two velocity components in the meridional plane and the circumferential velocity are calculated together with the temperature in the steady state. Based on the known velocity and temperature distributions the unsteady concentration distributions of the boron are calculated. As the strength of the magnetic is increased, the flow velocities are decreased. Circumferential velocities are large near the crucible side-wall and in the region below the rotating crystal. Steep temperatures gradient near the edge of the rotating crystal causes the Marangoni convection. It has been found out that the convection characteristics affects the unsteady transport phenomena of the boron.

  • PDF

Benzothiazole fluorine-boron core complex: quantum luminescence controls

  • Son, Young-A;Kim, Hyung-Joo;Li, Xiaochuan
    • Proceedings of the Korean Society of Dyers and Finishers Conference
    • /
    • 2012.03a
    • /
    • pp.71-71
    • /
    • 2012
  • To control luminescence emission property, a novel series of strong fluorescent fluorin-boron complexes were synthesized in higher yield. The resulting structural analysis was completed. Small molecules with a built-in fluorine-boron core structural architecture has been attracted considered attention as the key emissive elements due to the their good properties such as bipolar charge transport and high photo efficiency. Thus, new type of fluorine-boron(F-B) complexes are designed and prepared. Changing the substituent position on fluorophore ring provided a deep understanding on the relationship between structure and optical properties.

  • PDF

BOTANI: High-fidelity multiphysics model for boron chemistry in CRUD deposits

  • Seo, Seungjin;Park, Byunggi;Kim, Sung Joong;Shin, Ho Cheol;Lee, Seo Jeong;Lee, Minho;Choi, Sungyeol
    • Nuclear Engineering and Technology
    • /
    • v.53 no.5
    • /
    • pp.1676-1685
    • /
    • 2021
  • We develop a new high-fidelity multiphysics model to simulate boron chemistry in the porous Chalk River Unidentified Deposit (CRUD) deposits. Heat transfer, capillary flow, solute transport, and chemical reactions are fully coupled. The evaporation of coolant in the deposits is included in governing equations modified by the volume-averaged assumption of wick boiling. The axial offset anomaly (AOA) of the Seabrook nuclear power plant is simulated. The new model reasonably predicts the distributions of temperature, pressure, velocity, volumetric boiling heat density, and chemical concentrations. In the thicker CRUD regions, 60% of the total heat is removed by evaporative heat transfer, causing boron species accumulation. The new model successfully shows the quantitative effect of coolant evaporation on the local distributions of boron. The total amount of boron in the CRUD layer increases by a factor of 1.21 when an evaporation-driven increase of soluble and precipitated boron concentrations is reflected. In addition, the concentrations of B(OH)3 and LiBO2 are estimated according to various conditions such as different CRUD thickness and porosity. At the end of the cycle in the AOA case, the total mass of boron incorporated in CRUD deposits of a reference single fuel rod is estimated to be about 0.5 mg.

Charge Transport Properties of Boron/Nitrogen Binary Doped Graphene Nanoribbons: An ab Initio Study

  • Kim, Seong Sik;Kim, Han Seul;Kim, Hyo Seok;Kim, Yong Hoon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.180.2-180.2
    • /
    • 2014
  • Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

  • PDF

Oxygen Transport in Highly Boron Doped Silicon Melt

  • Terashima, K.;Abe, K.;Maeda, S.;Nakanishi, H.
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1997.06a
    • /
    • pp.207-209
    • /
    • 1997
  • Influences of boron addition on the oxygen solubiligy in silicon melt and the amount of evaporation loss from the melt surface were investigated. It has been found the oxygen concentration increases from 2${\times}$1018 to 4${\times}$1018 atoms/㎤. The amount of evaporation loss was found to vary widely depending on the melt temperature. The amount of SiO evaporating form boron doped (∼102121 atoms/㎤) silicon melt at 1550$^{\circ}C$ is about twice as much as the value of non-doped melt.

  • PDF