Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Oxygen Transport in Highly Boron Doped Silicon Melt

  • Terashima, K. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
  • Abe, K. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
  • Maeda, S. (Silicon Melt Advanced Project, Shonan Institute of Technology) ;
  • Nakanishi, H. (Silicon Melt Advanced Project, Shonan Institute of Technology)
  • Published : 1997.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

Influences of boron addition on the oxygen solubiligy in silicon melt and the amount of evaporation loss from the melt surface were investigated. It has been found the oxygen concentration increases from 2${\times}$1018 to 4${\times}$1018 atoms/㎤. The amount of evaporation loss was found to vary widely depending on the melt temperature. The amount of SiO evaporating form boron doped (∼102121 atoms/㎤) silicon melt at 1550$^{\circ}C$ is about twice as much as the value of non-doped melt.

Keywords