• Journal of the korean academy of Pediatric Dentistry
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• v.26 no.1
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• pp.53-61
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• 1999

Newley developed dentin bonding system which contains self-etching primer performed the removing of smear layer and etching procedure at once. So, it make possible more simple and shorter working time, the stronger bonding strength than conventional dentin bonding system. Cavities were prepared in the buccal and lingual surface of 30 extracted primary molars, and randomly assigned into three equal groups of 10 each. All cavities were filled with Z-100 composite resin following manufacturer's specifications after priming of three different dentin bonding system. Specimens stored for 7 days in 37 degree C water, thermocycled for 1000 cycles between 5 degree C and 55 degree C, immersed in 50% silvernitrate solution for 24 hours, and embedded in resin before being sectioned longitudinally. Data were analyzed by t-test and ANOVA. Mac-Bond II and Clearfil Linear-Bond II showed less microleakage at the occlusal and gingival margins compared to Scotchbond Multi Purpose. All dentin bonding systems showed significantly less microleakage at the occlusal margins compared to the gingival margins. But, there were no significantley difference between each group.

• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Journal of Technologic Dentistry
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• v.35 no.4
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• pp.353-358
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• 2013

Purpose: This study was observation shear bonding strength by compositional change and firing step of a Ni-Cr alloy for porcelain fused metal crown. The aim of study was to suggest the material for firing step of Ni71-Cr14 alloy to development of alloy for porcelain fused to metal crown. Methods: The test was on the two kinds of Ni-Cr alloy specimens. The surfaces of two alloys were analyzed by EDX in order to observe oxide characteristic. And the shear test was performed by MTS. Results: The surface property and oxide characteristic analysis of oxide layer, weight percentage of Element O within $Ni_{71}Cr_{14}$ alloy measured 23.32wt%, and $Ni_{59}Cr_{24}$ alloy was measured 23.03wt%. And the maximum shear bonding strength was measured 58.02MPa between $Ni_{59}Cr_{24}$ alloy and vintage halo(H4 group). Conclusion: The surface property and oxide characteristic three kind of Ni-Cr alloy was similar. and shear bonding strength showed the highest bonding strength in H4 specimens.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.154-154
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• 2015

현재 액체로켓 엔진 연소기 내벽은 bonding layer NiCrAlY과 Top layer $ZrO_2$가 플라즈마 용사 방식으로 형성 된다. 이는 뛰어난 열 차폐 특성과 작업시간이 짧은 장점이 있지만, bonding layer와 Top layer 사이의 열팽창 계수 차이로 인한 균열 발생 가능성이 내재 되어 있고, 연소실 내벽에 균일한 두께의 코팅층을 형성하기 어렵고 설비가 비싸다는 단점으로 인하여 세라믹 코팅 층을 금속 코팅 층으로 대체 하고자 한다. 금속 코팅층은 모재와의 밀착성이 높고, 우수한 산화 및 부식방지 기능을 가지며 저렴하다는 장점이 있다. 또한 코팅 후 연마 작업이 가능해 연소실 내부형상을 설계조건 대로 유지 할 수 있는 특징이 있다. 따라서 본 연구에서는 연소실 내벽에 적용할 모재, 무전해 Ni-P 도금과 전해 Cr 도금층 사이의 밀착력 향상을 위한 방법에 대한 연구를 하였다. 밀착력 향상을 위한 요소로 전처리 용액과 열처리 시간에 따른 영향을 알아보고자 하였으며, 이를 위해서 5가지의 산세 용액으로 각 시편을 산세 한 후, 6시간, 12시간, 18시간 열처리 하여 단면을 비교하여 열처리에 영향을 알아보고자 하였다. 연구 결과 산세 용액의 영향은 크게 나타나지 않았으며, 열처리 시간이 길수록 Ni-P/Cr의 확산이 더 잘 일어나 확산층이 더 넓어지면서 밀착력이 더 좋아 진 것으로 판단되어 진다.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.163-169
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• 2024

As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO₂ hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO₂ composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)₂ precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO₂ substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.9-15
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• 2021

Miniaturization of semiconductor devices has recently faced a physical limitation. To overcome this, 3D packaging in which semiconductor devices are vertically stacked has been actively developed. 3D packaging requires three unit processes of TSV, wafer grinding, and bonding, and among these, copper bonding is becoming very important for high performance and fine-pitch in 3D packaging. In this study, the effects of Ti nanolayer on the antioxidation of copper surface and low-temperature Cu bonding was investigated. The diffusion rate of Ti into Cu is faster than Cu into Ti in the temperature ranging from room temperature to 200℃, which shows that the titanium nanolayer can be effective for low-temperature copper bonding. The 12nm-thick titanium layer was uniformly deposited on the copper surface, and the surface roughness (R_q) was lowered from 4.1 nm to 3.2 nm. Cu bonding using Ti nanolayer was carried out at 200℃ for 1 hour, and then annealing at the same temperature and time. The average shear strength measured after bonding was 13.2 MPa.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.50-60
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• 2008

The majority of the described experimental results deal with relatively pure aluminium. Variations were made in the pretreatment of the aluminum substrates and an investigation was performed on the resulting changes in oxide layer composition and chemistry. Subsequently, the bonding behavior of the surfaces was investigated by using model adhesion molecules. These molecules were chosen to represent the bonding functionality of an organic polymer. They were applied onto the pretreated surfaces as a monolayer and the bonding behavior was studied using infrared reflection absorption spectroscopy. A direct and clear relation was found between the hydroxyl fraction on the oxide surfaces and the amount of molecules that subsequently bonded to the surface. Moreover, it was found that most bonds between the oxide surface and organic functional groups are not stable in the presence of water. The best performance was obtained using molecules, which are capable of chemisorption with the oxide surface. Finally, it was found that freshly prepared relatively pure aluminum substrates, which are left in air, rapidly lose their bonding capacity towards organic functional groups. This can be attributed to the adsorption of contamination and water to the oxide surface. In addition the adhesion of a typical epoxy-coated aluminum system was investigated during exposure to water at different temperatures. The coating was found to quite rapidly lose its adhesion upon exposure to water. This rapid loss of adhesion corresponds well with the data where it was demonstrated that the studied epoxy coating only bonds through physisorptive hydrogen bonding, these bonds not being stable in the presence of water. After the initial loss the adhesion of the coating was however found to recover again and even exceeded the adhesion prior to exposure. The improvement could be ascribed to the growth of a thin oxyhydroxide layer on the aluminum substrate, which forms a new, water-stable and stronger bond with the epoxy coating. Two routes for improvement of adhesion are finally decribed including an interphasial polymeric thin layer and a treatment in boiling water of the substrate before coating takes place. The adhesion properties were finely also studied as a function of the Mg content of the alloys. It was shown that an enrichment of Mg in the oxide could take place when Mg containing alloys are heat-treated. It is expected that for these alloys the (hydr)oxide fraction also depends on the pre-treatment and on the distribution of magnesium as compared to the aluminium hydroxides, with a direct impact on adhesive properties.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.744-750
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• 1998

Unlike common device, MEMS(micro-electro-mechanical system) device consists of very small mechanical structures which determine the performance of the device. Because of its small mechanical structure inside. MEMS device is very sensitive to thermal stress caused by CTE(coefficient of thermal expansion) mismatch between its components. Therefore, its characteristics are affected by material properties. process temperature. and dimensions of each layer such as chip, adhesive and substrate. In this study. we investigated the change of the thermal stress in the chip attached to a substrate. With computer-aided finite element method (FEM), the computer simulation of the thermal stress was conducted on variables such as bonding material, process temperature, bonding layer thickness and die size. The commercial simulation program, ABAQUS ver5.6, was used. Subsequently 3-layer test samples were fabricated, and their degree of bending were measured by 3-D coordinate measuring machine. The experimental results were in good agreement with the simulation results. This study shows that the bonding layer could be the source of stress or act as the buffer layer for stress according to its elastic modulus and CTE. Solder adhesive layer was the source of stress due to its high elastic modulus, therefore high compressive stress was developed in the chip. And the maximum tensile stress was developed in the adhesive layer. On the other hand, polymer adhesive layer with low elastic modulus acted as buffer layer, and resulted in lower compressive stress. The maximum tensile stress was developed in the substrate.

• 한국전기화학회:학술대회논문집
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• 2005.07a
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• pp.383-390
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• 2005

Effect of applying a DC voltage on the interfacial reaction at the metal to zirconia interface was investigated utilizing an oxygen ionic conductivity of partially stabilized zirconia. The joining of copper rod and zirconia tube was carried out in Ar gas atmosphere at $1000^{\circ}C$. There are two type of the joining. The one is the reaction bond consisting of copper and zirconia was dominated by surface reaction with a undetectable very thin layer. It was found that copper elements were diffused to zirconia side, but that Zr ions were not diffused to copper side. These results mean application of a DC voltage to migrate oxygen to the copper-zirconia interface can oxidize metal at the copper-zirconia interface and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result mean application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cu.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.