• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.798-802
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• 2002

Metallurgical studies on the bonded interlayer of directionally solidified Ni-base superalloy GTD111 joints were carried out during transient liquid phase bonding. The formation mechanism of solid during solidification process was also investigated. Microstructures at the bonded interlayer of joints were characterized with bonding temperature. In the bonding process held at 1403K, liquid insert metal was eliminated by well known mechanism of isothermal solidification process and formation of the solid from the liquid at the bonded interlayer were achieved by epitaxial growth. In addition, grain boundary formed at bonded interlayer is consistent with those of base metal. However, in the bonding process held at 1453K, extensive formation of the liquid phase was found to have taken place along dendrite boundaries and grain boundaries adjacent to bonded interlayer. Liquid phases were also observed at grain boundaries far from the bonding interface. This phenomenon results in liquation of grain boundaries. With prolonged holding, liquid phases decreased gradually and changed to isolated granules, but did not disappeared after holding for 7.2ks at 1473K. This isothermal solidification occurs by diffusion of Ti to be result in liquation. In addition, grain boundaries formed at bonded interlayer were corresponded with those of base metal. In the GTD-ll1 alloy, bonding mechanism differs with bonding temperature.

• Journal of Welding and Joining
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• 제32권1호
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• pp.40-46
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• 2014

Bonding technology and bonding mechanism of metal to ceramic including brazing, diffusion bonding, friction welding and etc were reviewed in this study. Various factors should be considered from a bonding design step to acquire a good bonding joint because of a large difference between metal and ceramic in crystal lattice, coefficient of thermal expansion and various properties. In addition, metal and ceramic bonding technologies are constantly being developed according to precise components, multi-function and application to harsh environment. However, improvement of bonding properties and bonding reliability also should be accompanied. Bonding of ceramics, such as $ZrO_2$, $Ti_3AlC_2$ and SiC, to metals like Ti-alloy, TiAl and steel were described in this paper.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2002년도 봄 학술발표회 논문집
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• pp.389-396
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• 2002

Engineers should be careful in the design of bonding piles into pile caps because they are weak points in the pile foundation. Therefore in this study, the mechanism of bonding piles into pile caps was explained, and the design method of the composite bonding method was proposed. And the proposed design method was verified in comparison with the result of the full scale test. Also, the characteristic for the bearing capacity and the mechanism of compressive load of bonding method were analyzed.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• Journal of Welding and Joining
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• 제9권3호
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• pp.26-33
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• 1991

As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

• Journal of Welding and Joining
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• 제8권3호
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• pp.31-38
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• 1990

The bonding mechanism and bond strength were investigated for the cold pressure welding of Al to Al, Cu to Cu and Al to Cu by upsetting. A phenomenon of bonding betweenthe metallic components has been observed by a scanning electron microscope and metallurgical microscope. A modified equation for bond strength with respect to the reduction of height shows reasonably a good agreement with the experimental data. When the values of the hardening factor and threshold deformation for the given materials could be determined, the theoretical bond strength can be calculated.

• Journal of Welding and Joining
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• 제21권2호
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)

• Journal of Welding and Joining
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• 제15권6호
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• pp.32-40
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• 1997

Solid state diffusion bonding is the joining process performed by creep and diffusion, which is accelerated by heating below melting temperature and proper pressing, in vacuum or shielding gas atmosphere. By this process we can obtain sufficient joint which can't be expected from the fusion welding. For Ti-6Al-4V alloy, the optimum solid state diffusion bonding condition and mechanical properties of the joint were found, and micro void morphology at bond interface was observed by SEM. The results of tensile test showed sufficient joint, whose mechanical properties are similar to that of base metal. 850$^{\circ}$C, 3MPa is considered as the optimum bonding condition. Void morphology at interface is long and flat at the initial stage. As the percentage of bonded area increases, however, small and round voids are found. Variation of void shape can be explained as follows. As for the void shrinkage mechanism, at the initial stage, power law creep is the dominant, but diffusion mechanism is dominant when the percentage of bonded area is increased.

• 한국재료학회지
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• 제19권11호
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• pp.625-630
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• 2009

Embedding of active devices in a printed circuit board has increasingly been adopted as a future electronic technology due to its promotion of high density, high speed and high performance. One responsible technology is to embedded active device into a dielectric substrate with a build-up process, for example a chipin-substrate (CiS) structure. In this study, desmear treatment was performed before Cu metallization on an FR-4 surface in order to improve interfacial adhesion between electroless-plated Cu and FR-4 substrate in Cu via structures in CiS systems. Surface analyses using atomic force microscopy and x-ray photoemission spectroscopy were systematically performed to understand the fundamental adhesion mechanism; results were correlated with peel strength measured by a 90o peel test. Interfacial bonding mechanism between electrolessplated Cu and FR-4 substrate seems to be dominated by a chemical bonding effect resulting from the selective activation of chemical bonding between carbon and oxygen through a rearrangement of C-C bonding rather than from a mechanical interlocking effect. In fact, desmear wet treatment could result in extensive degradation of FR-4 cohesive strength when compared to dry surface-treated Cu/FR-4 structures.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2719-2723
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• 2012

A kinetic study is reported for nucleophilic substitution reactions of benzyl 4-pyridyl carbonate 6 with a series of alicyclic secondary amines in MeCN. The plot of pseudo-first-order rate constant ($k_{obsd}$) vs. [amine] curves upward, which is typical for reactions reported previously to proceed through a stepwise mechanism with two intermediates (i.e., a zwitterionic tetrahedral intermediate $T^{\pm}$ and its deprotonated form $T^-$). Dissection of $k_{obsd}$ into the second- and third-order rate constants (i.e., $Kk_2$ and $Kk_3$, respectively) reveals that $Kk_3$ is significantly larger than $Kk_2$, indicating that the reactions proceed mainly through the deprotonation pathway (i.e., the $k_3$ process) in a high [amine] region. This contrasts to the recent report that the corresponding aminolysis of benzyl 2-pyridyl carbonate 5 proceeds through a forced concerted mechanism. An intramolecular H-bonding interaction was suggested to force the reactions of 5 to proceed through a concerted mechanism, since it could accelerate the rate of leaving-group expulsion (i.e., an increase in $k_2$). However, such H-bonding interaction, which could increase $k_2$, is structurally impossible for the reactions of 6. Thus, presence or absence of an intramolecular H-bonding interaction has been suggested to be responsible for the contrasting reaction mechanisms (i.e., a forced concerted mechanism for the reaction of 5 vs. a stepwise mechanism with $T^{\pm}$ and $T^-$ as intermediates for that of 6).