• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1197-1201
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• 1994

The fracture strength and fracture modes were studied in 3Y-TZP/NiNi bonding which change their interfacial structure with bonding condition. Average 4-point bending strength of 200 MPa to 400 MPa were achieved. The formation of Ti-oxide phase at the interface critically influenced the bonding strength and fracture mode. The fracture surface of Ti-oxide free interface contained multiphase in some case including ZrO2. From the result it was confirmed that in order to maximize the bonding strength crack deflection from interface to ceramic was required.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.857-863
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• 2014

In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• Journal of Welding and Joining
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• v.23 no.6
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• pp.77-86
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• 2005

Low temperature bonding of the silicon and glass using the Spin-on Glass (SOG) has been conducted experimentally to figure out the effects of the SOG solution composition and process variables on bond strength using the Design of Experiment method. In order to achieve the high quality bond interface without rack, sufficient reaction time of the optimal SOG solution composition is needed along with proper pressure and annealing temperature. The shear strength under the optimal SOG solution composition and process condition was higher than that of conventional anodic bonding and similar to that of wafer direct bonding.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.52-58
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• 2011

In this paper, the direct bonding process between FPCB and HPCB was studied. By using an ultrasonic horn which is mounted on the ultrasonic bonding machine, it is alternatively possible to bond the gold pads attached on the FPCB and HPCB at room temperature without an adhesive like ACA or NCA. The process condition for obtaining more bonding strength than 0.6 Kgf, which is commercially required, was carried out as 40 kHz of frequency, 0.6 MPa of bonding pressure and 2 second of bonding time. The peel off test was performed for evaluating bonding strength which results in more than 0.8 Kgf.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• Journal of Technologic Dentistry
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• v.33 no.1
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• pp.25-35
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• 2011

Purpose: There are some advantages of the acrylic resin denture base ; appropriate strength, volume safety, simple processing apparatus, and low cost. But, it have a weakness for fracture by intense pressure or shock. However, the repairs for resin denture base are possible using various materials and techniques. There is a few studies in repairs for resin denture base, but not clinical researches. And there is no studies in absorbed saliva into the region of fracture and bond strength. This study is to observe re-bond strength of resin denture base after repairing under saliva absorption. Methods: The samples were made of heat curing resin and the rectangular parallelepiped specimens which were 50mm long, 10mm wide and 3mm high. The four different groups immersed in the artificial saliva for 2 weeks were prepared, 1) no repaired control samples, 2) immediately repaired samples, 3) repaired samples after 1 day dry, and 4) repaired samples after 3 days dry. The prepared samples were repaired by two different curing materials, self curing resin and heat curing resin method. Each groups composed of 10 specimens were experimented with the three point bending tests for bonding strength measuring Results: There were under condition absorbed in the artificial saliva and repaired by self curing resin method, repaired specimens after 1 day and 3 days dry groups had higher values of bonding strengths than control group, and bonding strengths of immediately repaired samples were similar to those of control samples (p<0.05). There were under condition immersed in the artificial saliva and repaired by heat curing resin method, immediately repaired samples showed similar values to bonding strengths of control groups, and repaired samples after 1 day and 3 days dry groups were lower than those of control group (p>0.05). Conclusion: In this study, the repairs for resin denture base were remarkably high values of bonding strengths than those of the past, and showed that have stable bonding strengths independent of saliva absorption of denture base, so present repairs for resin denture base can be performed, regardless of saliva conditions.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.23 no.4
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• pp.355-360
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• 2014

Recently, the use of LED is increasing. This paper presents the new package process of thermal compression bonding using metal layered LED chip for the high power LED device. Effective thermal dissipation, which is required in the high power LED device, is achieved by eutectic/flip chip bonding method using metal bond layer on a LED chip. In this study, the process condition for the LED eutectic die bonder system is proposed by using the analysis program, and some experimental results are compared with those obtained using a DST (Die Shear Tester) to illustrate the reliability of the proposed process condition. The cause of bonding failures in the proposed process is also investigated experimentally.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1480-1481
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• 2008

In this paper, we present surface treatments for achieving bonds between PMMA and PDMS substrates. Silane primer is used for the formation of hydroxyl group on PMMA surfaces. The formed hydroxyl groups enhance the bonding strength of PDMS-PMMA substrates without channel clogging and structure deformation. The bonding strength on the different surface treatments (include oxygen plasma, 3-APTES, and corona discharge) is evaluated to find optimal bonding condition. The maximum bonding strength at the optimal surface treatment is over 300 kPa. The surface treatment using silane primer can be used to the bonding process of Micro-TAS and Lab-on-a-Chip.