• Elastomers and Composites
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• v.57 no.4
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• pp.157-164
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• 2022

Representative bulletproof materials, such as aramid or ultra-high molecular weight polyethylene(UHMWPE), have excellent strength and modulus in the plane direction but are very vulnerable to forces applied in the thickness direction. This paper reports a study on the effects of reinforcement in the thickness direction when bulletproof composite fabrics are prepared to improve their performance. Aramid and UHMWPE fabrics were combined using the film-bonding, needle-punching, or stitching methods and then subjected to low-velocity projectile and ball-drop impact tests. The results of the low-velocity projectile test indicated that the backface signature(BFS) decreased by up to 29.2% in fabrics obtained via the film-bonding method. However, the weight of the film-bonded fabric increased by approximately 23% compared with that obtained by simple lamination, and the fabric stiffened on account of the binder. Flexibility, light weight for wearability, and excellent bulletproof performance are very important factors in the development of bulletproof materials. When the needle-punching method was used, the BFS increased as the fibers sustained damage by the needle. When the composite fabrics were combined by stitching, no significant difference in weight and thickness was observed, and the BFS showed similar results. When a diagonal stitching pattern was employed, the BFS decreased as the stitching density increased. By contrast, when a diamond stitching pattern was used, the fabric fibers were damaged and the BFS increased as the stitching density increased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.672-675
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• 1999

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1211-1214
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• 2003

The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.18-20
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• 1997

The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2001.05a
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• pp.224-231
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• 2001

Hydrogenated amorphous carbon films were deposited by ERC-PECVD with deposition conditions, such as ECR power, gas composition of methane and hydrogen, deposition time, and substrate bias voltage. The characteristics of the film were analyzed using the AES, ERDA, FTIR. Raman spectroscopy and micro hardness tester. From the results of AES and ERDA, the elements in the deposited film were confirmed as carbon and hydrogen atoms. FTIR spectroscopy analysis shows that the atomic bonding structure of a-C:H film consisted of sp³and sp²bonding, most of which is composed of sp³bonding. The structure of the a-C:H films changed from CH₃bonding to CH₂or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased. Raman scattering analysis shows that integrated intensity ratio (I/sub D//I/sub G/) of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.465-469
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• 1999

In this paper, spacer process for FED (Field Emission Display ) was developed with the glass to glass anodic bonding technology using Al film as an interlayer. Characteristics, current density-time curves and force of the anodic boding were measured on various thickness of Al film; 1000$\AA$, 2000$\AA$, 3000$\AA$, 4000$\AA$ and 500$\AA$. Holders for spacer were fabricated with photosensitive glass and (110) Si wafer by bulk micromachining. Spacers was formed on glass substrate by spacer glass to glass anodic bonding and an evacuated panel was fabricated to prove the potential of application for FED.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.41-47
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• 1992

In SFB Process, after 110$0^{\circ}C$ annealing in wet OS12T(95$^{\circ}C$ HS12TO bubbling) atmosphere, the existence of the interfacial oxide film in micro-gap at Si-Si bonding interface was identified. The angle lapping/staining and SEM morphologies of bonding interface showed that the growing behavior of interfacial oxide made a contribution to eliminate the micro-gaps having a width of 200-300$\AA$. In case of the diodes composed of p-n wafer pairs made by SFB processes, the annealed one in wet OS12T atmosphere exhibited a dielectric breakdown phenomena of interfacial oxide at 37-40 volts d.c.

• The Journal of Korea Robotics Society
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• v.11 no.3
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• pp.140-145
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• 2016

In this paper, we fabricate arrayed-type flexible capacitive touch sensor using liquid metal (LM) droplets (4 mm spatial resolution). Poly-4-vinylphenol (PVP) layer is used as a dielectric layer on the electrode patterned Polyethylene naphthalate (PEN) film. Bonding tests between hydroxyl group (-OH) on the PVP film and polydimethylsiloxane (PDMS) are conducted in a various $O_2$ plasma treatment conditions. Through the tests, we can confirm that non-$O_2$ plasma treated PVP layer and $O_2$ plasma treated PDMS can make a chemical bond. To measure dynamic range of the device, one-cell experiments are conducted and we confirmed that the fabricated device has a large dynamic range (~60 pF).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$