• 제목/요약/키워드: Bonding -Film

검색결과 520건 처리시간 0.029초

Hydrogen-Bonding Induced Alternating Thin Films of Dendrimer and Block Copolymer Micelle

  • Park, Chi-Young;Rhue, Mi-Kyo;Im, Min-Ju;Kim, Chul-Hee
    • Macromolecular Research
    • /
    • 제15권7호
    • /
    • pp.688-692
    • /
    • 2007
  • The hydrogen-bonding induced alternating multilayer thin films of dendrimers and block copolymer micelles were demonstrated. The block copolymer micelles derived from amphiphilic poly(2-ethyl-2-oxazoline)block-$poly({\varepsilon}-carprolactone)$ (PEtOz-PCL) in aqueous phase have a core-shell structure with a mean hydrodynamic diameter of 26 nm. The hydrogen bonding between the PEtOz outer shell of micelle and the carboxyl unit of poly(amidoamine) dendrimer of generation 4.5 (PAMAM-4.5G) at pH 3 was utilized as a driving force for the layerby-layer alternating deposition. The multilayer thin film was fabricated on the poly(methyl methacrylate) (PMMA) thin film spin-coated on silicon wafer or glass substrate by the alternate dipping of PEtOz-PCL micelles and PAMAM dendrimers in aqueous solution at pH 3. The formation of multilayer thin film was characterized by using ellipsometry, UV-vis spectroscopy, and atomic force microscopy. The PEtOz outer shell of PEtOz-PCL micelle provided the pH-responsive hydrogen bonding sites with peripheral carboxylic acids of PAM AM dendrimer. The multilayer thin film was reversibly removed after dipping in aqueous solution at $pH{\geq}5.6$ due to dissociation of the hydrogen bonding between PEtOz shell of PEtOz-PCL micelle and peripheral carboxyl units of PAMAM dendrimer.

ECR-PECVD 방법으로 제조한 a-C:H 박막의 결합구조 (Atomic bonding structure in the a-C:H thin films prepared by ECR-PECVD)

  • 손영호;정우철;정재인;박노길;김인수;배인호
    • 한국진공학회지
    • /
    • 제9권4호
    • /
    • pp.382-388
    • /
    • 2000
  • ECR-PECVD 방법을 이용하여 ECR power, $CH_4/H2$ 가스 혼합비와 유량, 증착시간, negative DC self bias 전압 등을 변화 시켜가면서 수소가 함유된 비정질 탄소 박막을 제조하고, 증착조건에 따른 박막의 결합구조 변화를 FTIR로 분석하였다. a-C:H 박막에 대한 FTIR 스팩트럼의 흡수 peak들은 2800~3000 $\textrm{cm}^{-1}$ 영역에서 관측되었으며, 대부분 $sp^3$ 결합을 하고있고 일부 $sp^2$ 결합구조가 존재함을 알 수 있었다. $CH_4/H_2$ 가스 혼합비와 유량의 미소 변화는 a-C:H 박막의 탄소와 수소의 결합구조에 큰 영향을 미치지 않았으며, 증착 시간이 증가할수록 탄소와 수소 원자들의 결합구조가 $CH_3$ 구조로부터 $CH_2$ 나 CH 구조로 변하고 있음을 확인하였다. 또한, bias 전압을 증가시킬수록 플라즈마에 의한 이온충돌 현상이 두드러져 탄소와 결합하고 있던 수소원자들이 떨어져 나가는 탈수소화 현상도 확인할 수 있었으며, 증착조건에 따른 a-C:H 박막의 결합구조 분석을 토대로 산업에 응용할 수 있는 높은 경도와 밀착성을 갖는 박막을 ECR-PECVD 방법으로 제조할 수 있음을 확인하였다.

  • PDF

머신비전 기반 ACF 본딩 기법 개발 (Development of a Method for ACF Bonding Based on Machine Vision)

  • 이석원
    • 문화기술의 융합
    • /
    • 제4권3호
    • /
    • pp.209-212
    • /
    • 2018
  • 이방성 도전필름(ACF)을 사용한 본딩은 납땜이 용이하지 않은 이질적인 소재 간 미세 접합을 형성하는데 널리 사용되어진다. 성공적인 ACF 본딩 구현을 위한 3가지 제한조건이 존재한다. 본딩 접촉점은 설정된 작업 시간동안 적절한 압력과 온도를 유지한 헤드에 의해서 압착되어야 한다. 본 논문에서는 머신 비전을 기반으로 한 ACF 본딩기법을 제안하고 실험을 통해 검증한다. 시스템은 본딩 작업대 상의 PCB 위치 및 방향을 계산하고 헤드가 압착되어야 하는 최적의 접촉점을 결정한다. 제안한 시스템이 접촉면 상의 헤드 평탄도를 보장함으로써 접착력을 향상시킬 수 있음을 실험결과를 통해 보여준다.

CS졸을 이용한 Poly(epoxy-imide)-나노 Silica 하이브리드 필름의 합성과 유전특성 (Synthesis of Poly(epoxy-imide)-Nano Silica Hybrid Film via CS Sol-gel Process and Their Dielectric Properties)

  • 한세원;한동희;강동필;강영택
    • 한국전기전자재료학회논문지
    • /
    • 제20권1호
    • /
    • pp.35-40
    • /
    • 2007
  • The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

NITROGEN DOPED DIAMOND LIKE CARBON FILM SYNTHESIZED BY MICROWAVE PLASMA CVD

  • Urao, Ryoichi;Hayatsu, Osamu;Satoh, Toshihiro;Yokota, Hitoshi
    • 한국표면공학회지
    • /
    • 제29권5호
    • /
    • pp.549-555
    • /
    • 1996
  • Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

  • PDF

SiO$_2$ 박막을 이용한 SOI 직접접합공정 및 특성 (Processing and Characterization of a Direct Bonded SOI using SiO$_2$ Thin Film)

  • 신동운;최두진;김긍호
    • 한국세라믹학회지
    • /
    • 제35권6호
    • /
    • pp.535-542
    • /
    • 1998
  • SOI(silicon oninsulator) was fabricated through the direct bonding of a hydrophilized single crystal Si wafer and a thermally oxidized SiO2 thin film to investigate the stacking faults in silicon at the Si/SiO2 in-terface. At first the oxidation kinetics of SiO2 thin film and the stacking fault distribution at the oxidation interface were investigated. The stacking faults could be divided into two groups by their size and the small-er ones were incorporated into the larger ones as the oxidation time and temperature increased. The den-sity of the smaller ones based critically lower eventually. The SOI wafers directly bonded at the room temperature were annealed at 120$0^{\circ}C$ for 1 hour. The stacking faults at the bonding and oxidation interface were examined and there were anomalies in the distributions of the stacking faults of the bonded region to arrange in ordered ring-like fashion.

  • PDF

Field Emission Display의 고진공 실장에 관한 연구 (Study on Vacuum Packaging of Field Emission Display)

  • 이덕중;주병권;장진;오명환
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
    • /
    • pp.103-106
    • /
    • 1999
  • In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

  • PDF

PECVD로 제조된 비정질 질화탄소 박막의 특성에 미치는 증착변수의 영향 (Effects of Deposition Conditions on the Properties of Amorphous Carbon Nitride Thin Films by PECVD)

  • 문형모;김상섭
    • 한국재료학회지
    • /
    • 제13권3호
    • /
    • pp.150-154
    • /
    • 2003
  • Amorphous carbon nitride films were deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition technique (PECVD) using $CH_4$and $N_2$as reaction gases. The growth and film properties were investigated while the gas ratio and the working pressure were changed systematically. At 1 Torr working pressure, an increase in the $N_2$partial pressure results in a significant increase of the deposition rate as well as an apparent presence of C ≡N bonding, while little affecting the microstructure and amorphus nature of the films. In the case of changing the working pressure at a fixed $N_2$partial pressure of 98%, a film grown at a medium pressure of $1${\times}$10^{-2}$ Torr shows the most prominent C=N bonding nature and photoluminescent property.

Improvement of Adhesion Strength of DLC Films on Nitrided Layer Prepared by Linear Ion Source

  • Shin, Chang-Seouk;Kim, Wang-Ryeol;Park, Min-Seok;Jung, Uoo-Chang;Chung, Won-Sub
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
    • /
    • pp.177-179
    • /
    • 2011
  • The purpose of this study is to enhance an adhesion between substrate and Diamond-like Carbon (DLC) film. DLC has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion because of weak bonding between DLC film and the substrate. For improvement adhesion, a layer between DLC film and the substrate was prepared by dual post plasma. DLC film was deposited on nitrided layer by linear ion source. The composed compound layer between substrate and DLC film was investigated by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The synthesized bonding structure of DLC film was analyzed using a micro raman spectrometer. Mechanical properties were measured by nano-indentation. In order to clarify the mechanism for improvement in adhesive strength, it was observed by scratch test.

  • PDF