• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.166-172
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• 1992

Studies have been conducted to explore single electron transfer (SET) induced photocyclization reactions of N-(trimethylsilylmethoxyalkyl)phthalimides(alkyl=E thyl, n-propyl, n-butyl, n-pentyl, and n-octyl). Photocyclizations occur in methanol in high yields to produce cyclized products in which phthalimide carbonyl carbon is bonded to the carbon of side chain in place of the trimethylsilyl group. Mechanism for these photocyclizations involving intramolecular SET from oxygen in the $\alpha-silylmethoxy$ groups to the singlet excited state phthalimide moieties followed by desilylation of the intermediate $\alpha-silylmethoxy$ cation radicals and cyclization by radical coupling are proposed. In contrast, photoreaction of N-(trimethylsilylmethoxyethyl) phthalimide in acetone follows different reaction routes to produce two cyclized products in which carbon-carbon bond formation takes place between the phthalimide carbonyl carbon and the carbon $\alpha$ to silicon and oxygen atoms via triplet carbonyl hydrogen abstraction triplet carbonyl silyl group abstraction pathways. The normal singlet SET pathway dominates these triplet processes for photoreaction of this substance in methanol. The efficient and regioselective cyclization reactions observed for photolysis in methanol represent synthetically useful processes for construction of medium and large ring heterocyclic compounds.

• Journal of Soil and Groundwater Environment
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• v.26 no.4
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• pp.1-7
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• 2021

The removal of PCBs (Polychlorinated biphenyls) in aqueous phase was investigated in the ultraviolet (UV) process, ultrasonics (US) process and ultraviolet/ultrasonic (UV/US) process using PCB No.7 and Aroclor 1260. For PCB No.7 relatively high removal efficiency over 90% was obtained during 20 min in the UV process and UV/US process. On the other hand, lower removal efficiency of 50 - 70% was achieved for it consisted of individual congeners of PCBs containing 3~8 of chlorine atom. It was found that the dechlorination reaction (the photolytic cleavage of C-Cl bond) was considered as a main removal mechanism in the UV process while PCBs were removed by cavitation-induced radical reaction in the US process. No significant dechlorination occurred in the US process. Consequently, it was suggested that the UV process or UV/US process was applicable for the removal of PCBs in aqueous phase in terms of the removal efficiency and operation time. In addition, the application of saturating gas such as Ar and Air could be considered to control redox condition and enhance the severity of acoustic cavitation for the removal of PCBs.

• Earthquakes and Structures
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• v.25 no.3
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• pp.209-221
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• 2023

The Mw=7.7 (Pazarcık-Kahramanmaraş) and Mw=7.6 (Elbistan-Kahramanmaraş) earthquakes that occurred in Türkiye on 06.02.2023 with 9 hours' intervals, caused great losses of life and property as the biggest catastrophe in the instrumental period. The earthquakes affecting an area of 14% of the country were enormous and caused a great deal of loss of life and damage. Numerous buildings have collapsed or damaged at different levels, both in the city centers and in rural areas. Within the scope of this study, masonry structure damage built from different types of materials in the earthquake region was taken into consideration. In this study, the damage and causes of such masonry structures that do not generally receive engineering services were examined and explained in detail. Insufficient interlocking between wall-wall and wall-roof, inadequate masonry, lack of horizontal and vertical bond beams, usage of low-strength materials, poor workmanship, and heavy earthen roof are commonly caused to structural damages. Separation at the corner point and out-of-plane mechanism in structural walls, and heavy earthen roof damages are common types of damage in masonry structures.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of Microbiology and Biotechnology
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• v.34 no.6
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• pp.1270-1275
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• 2024

Human gut bacterium Dorea sp. MRG-IFC3 is unique in that it is capable of metabolizing puerarin, an isoflavone C-glycoside, whereas it shows broad substrate glycosidase activity for the various flavonoid O-glycosides. To address the question on the substrate specificity, as well as biochemical characteristics, cell-free biotransformation of flavonoid glycosides was performed under various conditions. The results showed that there are two different enzyme systems responsible for the metabolism of flavonoid C-glycosides and O-glycosides in the MRG-IFC3 strain. The system responsible for the conversion of puerarin was inducible and comprised of two enzymes. One enzyme oxidizes puerarin to 3"-oxo-puerarin and the other enzyme converts 3"-oxo-puearin to daidzein. The second enzyme was only active toward 3"-oxo-puerarin. The activity of puerarin conversion to daidzein was enhanced in the presence of Mn²⁺ and NAD⁺. It was concluded that the puerarin C-deglycosylation by Dorea sp. MRG-IFC3 possibly adopts the same biochemical mechanism as the strain PUE, a species of Dorea longicatena.

• Journal of Microbiology and Biotechnology
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• v.34 no.7
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• pp.1544-1549
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• 2024

This study presents a fluorescent mechanism for two-step amplification by combining two widely used techniques, exponential amplification reaction (EXPAR) and catalytic hairpin assembly (CHA). Pseudomonas aeruginosa (P. aeruginosa) engaged in competition with the complementary DNA in order to attach to the aptamer that had been fixed on the magnetic beads. The unbound complementary strand in the liquid above was utilized as a trigger sequence to initiate the protective-EXPAR (p-EXPAR) process, resulting in the generation of a substantial quantity of short single-stranded DNA (ssDNA). The amplified ssDNA can initiate the second CHA amplification process, resulting in the generation of many double-stranded DNA (dsDNA) products. The CHA reaction was initiated by the target/trigger DNA, resulting in the release of G-quadruplex sequences. These sequences have the ability to bond with the fluorescent amyloid dye thioflavin T (ThT), generating fluorescence signals. The method employed in this study demonstrated a detection limit of 16 CFU/ml and exhibited a strong linear correlation within the concentration range of 50 CFU/ml to 10⁵ CFU/ml. This method of signal amplification has been effectively utilized to create a fluorescent sensing platform without the need for labels, enabling the detection of P. aeruginosa with high sensitivity.

• THE INTERNATIONAL COMMERCE & LAW REVIEW
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• v.46
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• pp.133-158
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• 2010

Independent guarantee is a creation of the need from the both sides, i.e. the applicant (principal debtor) and the beneficiary (creditor). The former used to have to deposit cash in favor of the beneficiary in case of his default, which laid a burden on his liquidity while the latter still wanted to have the equivalent to cash. Independent guarantee satisfied the both parties by freeing the applicant of a deposit and maintaining the beneficiary's right at the same time. The fact that independent guarantee has three payment mechanisms is not widely known to the public. They are (i) payment on first demand, (ii) payment upon submission of third-party documents, (iii) payment upon submission of an arbitral or court decision. From the applicant's point of view, the order in his favor is (iii), followed by (ii) and (i). As there shouldn't be a case where one party is at a disadvantage against the other, useful insight is being sought for the benefit of the applicant. First, the applicant can offer his intention to provide a payment mechanism (ii) or (iii) rather than (i) if he must deliver it. Second, if the beneficiary still wants to have (i) and the applicant is in a position not to reject it, the latter should thoroughly check any provisions that may work against him later. Third, the applicant could use counterbalancing provisions in underlying contract to cope with protective clauses in the guarantees. Forth, the applicant should review the beneficiary's sincerity to prevent unfair calling risks. The applicant may use an ECA(Export Credit Agency) in his country to which he can transfer not only unfair calling risks, but also political risks. On the other hand, a bank needs to keep the following advice in mind. The foremost important thing for the bank not to forget is that it provides a guarantee as a service provider, not as a responsible party for the feasibility of the project, etc. Credit risk of the applicant should require the greatest attention when issuing a guarantee: the bank should look into the possibility that it can procure immediate reimbursement from its customers after payment to the beneficiary. Second, the applicant's ability to complete the project should be reviewed by checking its track records, techniques and reputation, etc. Third, the bank may also use an ECA to cover the beneficiary's unfair calling risks as well as political risks. In the case of Korea, as Korea Export Insurance Corporation(KEIC) can cover all the risks mentioned above, the bank could use its service called 'Export Bond Insurance.' What's better for the bank is that ECA cover can enhance the bank's asset quality by putting it zero on its risk weighted asset.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.173-179
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• 2023

This paper analyzes the time-dependent dielectric breakdown(TDDB) degradation mechanism for each stress region of Peri devices manufactured by 4th generation VNAND process, and presents a complementary lifetime prediction model that improves speed and accuracy in a wider reliability evaluation region compared to the conventional model presented. SiON dielectric nMOSFETs were measured 10 times each under 5 constant voltage stress(CVS) conditions. The analysis of stress-induced leakage current(SILC) confirmed the significance of the field-based degradation mechanism in the low electric field region and the current-based degradation mechanism in the high field region. Time-to-failure(TF) was extracted from Weibull distribution to ascertain the lifetime prediction limitations of the conventional E-model and 1/E-model, and a parallel complementary model including both electric field and current based degradation mechanisms was proposed by extracting and combining the thermal bond breakage rate constant(k) of each model. Finally, when predicting the lifetime of the measured TDDB data, the proposed complementary model predicts lifetime faster and more accurately, even in the wider electric field region, compared to the conventional E-model and 1/E-model.

• Journal of the Korea Concrete Institute
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• v.19 no.6
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• pp.677-684
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• 2007

This study investigates the failure mechanism of RC beams strengthened with GFRP (glass fiber reinforced polymer) sheets. After analyzing failure mechanisms, the various methods to prevent the debonding failures, such as increasing bonded length of GFRP sheets, U-shape wrappings and epoxy shear keys are examined. The bonded length of GFRP sheets are calculated based on the assumed bond strengths of epoxy resin. The U-shape wrappings are either adopted at the end or center of the CFRP sheets bonded to the beam soft. The epoxy shear keys are embedded to the beam soft to provide sufficient bond strength. The end U-wrappings and the center U-wrappings are conventional, while epoxy shear keys are new details developed in this study. A total six half-scale RC beams have been constructed and tested to investigate the effectiveness of each methods to prevent debonding failure of GFRP sheets. From the experimental results, it was found that increasing bonded length or end U-wrappings do not prevent debonding failure. On the other hand, the beams with center U-wrappings and shear keys reached an ultimate state with their sufficient performance. The center U-wrappings tended to control debonding of the longitudinal GFRP sheets because the growth of the longitudinal cracks along the edges of the composites was delayed. In the case of shear keys, it was sufficient to prevent debonding and the beam was failed by GFRP sheets rupture.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.