• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 융합신호처리학회논문지
• /
• 제11권1호
• /
• pp.9-12
• /
• 2010

본 논문은 재난 감시를 위한 디지털 미디어 프로세서 기반의 적외선 열화상 처리 시스템의 설계 및 구현에 대하여 기술한다. 디지털 열화상 처리 보드는 DM642 디지털 미디어 프로세서와 비디오 인코더, 비디오 디코더 상용 칩을 기반으로 설계하고 구현하였다. 또한, 재난 감시 기능은 적외선 열화상의 온도분포를 분석하고 화재발생과 같은 재난상황을 감시하는 알고리즘을 구현하였으며, 적외선 열화상 입력은 $320\;{\times}\;240\;{\mu}$-bolometer 타입의 적외선 열화상 카메라를 사용하였다. 구현된 시제품의 시험 평가 결과, 10 프레임/초의 처리 속도로 요구되는 적외선 열화상 분석과 화재 검출 기능이 잘 동작 하였으며 구현 시스템의 실용성을 확인하였다.

• 센서학회지
• /
• 제16권6호
• /
• pp.475-483
• /
• 2007

This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
• /
• pp.19-22
• /
• 2003

For use in constructing highly sensitive thermal detectors, the present authors have been studying the preparation of Superconducting Flux Flow Sensor(SFFS). In this research, SFFS with five channel ($5{\mu}m$/1channel) has been fabricated based on the flux flow using high temperature superconducting thin films by the ICP etching technique. We have designed a bolometer based on the temperature dependence of the kinetic inductance of a superconducting flux flow thin film. In this paper examines the fabrications and flux flow resistance and thermometer responses of the highly sensitive sensor constructed of a thin YBCO film. It is also suggested that they will be applicable to a new type of flux flow sensor.

• 반도체디스플레이기술학회지
• /
• 제8권3호
• /
• pp.13-17
• /
• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
• /
• 한국우주과학회 2006년도 한국우주과학회보 제15권2호
• /
• pp.69-69
• /
• 2006

• 천문학회보
• /
• 제31권2호
• /
• pp.54.1-54.1
• /
• 2006

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2011년도 춘계학술대회 논문집
• /
• pp.209-210
• /
• 2011

• 센서학회지
• /
• 제27권5호
• /
• pp.335-339
• /
• 2018

The optical characteristics of a terahertz (THz) antenna-coupled bolometer (ACB) detector were evaluated using a pulsed quantum cascade laser (QCL) and radiation blackbody sources. We investigated a method for measuring the responsivity and noise-equivalent power (NEP) of the THz detector using two different types of light sources. When using a QCL source with a frequency of 3 THz, the average responsivity of 24 devices was $1.44{\times}10^3V/W$ and the average NEP of those devices was $3.33{\times}10^{-9}W/{\surd}Hz$. The average responsivity and NEP as measured by blackbody source were $1.79{\times}10^5V/W$ and $6.51{\times}10^{-11}W/{\surd}Hz$, respectively, with the measured values varying depending on the light source. This was because the output power of each light source was different, with the laser source being driven by a pulse type wave and the blackbody source being driven by a continuous wave. The power input to the THz sensor was also different. Futhermore, the responsivity and NEP values measured using band pass filter (BPF) were similar to those measured when using only THz windows. It was found that ACB sensor responds normally in the THz region to both the laser and the blackbody source, and the method was confirmed to effectively evaluate the characteristics of the THz sensor.