• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• ETRI Journal
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• v.38 no.2
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.14 no.5
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• pp.8-14
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• 2015

Heat treatment for car body molds is mainly a manual process performed by a worker. The performance of this process is affected by workers' skill level, and has limitation in maintaining uniform product quality. In this study, we developed a diode laser heat treatment robot system that implements an OLP type simulator to overcome the limitation of manual process, and to improve and stabilize the quality level. In addition, we verified the efficiency of the robot system and mechanism stability from the early stage through design verification and simulated analysis in the development stage. In addition, we carried out a field test to study the way to establish optimized D/B for diode laser heat treatment criteria for car body molds, such as heat treatment speed, interval, etc. via site experiment.

• Journal of Power Electronics
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• v.14 no.2
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• The Journal of Korean Society for Radiation Therapy
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• v.15 no.1
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• pp.67-77
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• 2003

I. Purpose Uniform dose distribution of the whole body is essential factor for the total body irradiation(TBI). In order to achieved this goal, we used to compensation filter to compensate body contour irregularity and thickness differences. But we can not compensate components of body, namely lung or bone. The purpose of this study is evaluation of dose attenuation in bone tissue when TBI using diode detectors and TLD system. II. Materials and Methods The object of this study were 5 patients who undergo TBI at our hospital. Dosimetry system were diode detectors and TLD system. Treatment method was bilateral and delivered 10MV X-ray from linear accelerator. Measurement points were head, neck, pelvis, knees and ankles. TLD used two patients and diode detectors used three patients. III. Results Results are as followed. All measured dose value were normalized skin dose. TLD dosimetry : Measured skin dose of head, neck, pelvis, knees and ankles were $92.78{\pm}3.3,\;104.34{\pm}2.3,\;98.03{\pm}1.4,\;99.9{\pm}2.53,\;98.17{\pm}0.56$ respectably. Measured mid-depth dose of pelvis, knees and ankles were $86{\pm}1.82,\;93.24{\pm}2.53,\;91.50{\pm}2.84$ respectably. There were $6.67\%{\sim}11.65\%$ dose attenuation at mid-depth in pelvis, knees and ankles. Diode detector : Measured skin dose of head, neck, pelvis, knees and ankles were $95.23{\pm}1.18,\;98.33{\pm}0.6,\;93.5{\pm}1.5,\;87.3{\pm}1.5,\;86.90{\pm}1.16$ respectably. There were $4.53\%{\sim}12.6\%$ dose attenuation at mid-depth in pelvis, knees and ankles. IV. Conclusion We concluded that dose measurement with TLD or diode detector was inevitable when TBI treatment. Considered dose attenuation in bone tissue, We must have adequately deduction of compensator thickness that body portion involved bone tissue.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.431-435
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• 2009

The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a InGaAlP laser diode for laser medical therapy and was designed for a pulse width modulation type to increase stimulation effects. To raise the stimulus effect of the human body, the optical irradiation frequency could be set up. The study has executed in-vivo experiment by employing our own developed laser diode irradiation system to investigate the effects of the InGaAlP laser diode irradiation on the wound healing as a preliminary study aimed at the application of InGaAlP laser diode to wound healing of human skin injury. The study cut out whole skin layers of Sprague-Dawley rat on the back part in 1 cm circle and observed developing effects after executing light irradiation for 9 days, and in result it is found that the light irradiation rat showed earlier wound healing than non-irradiation rat during the experimental period. In addition, there are some differences found regarding the healing process between laser diode irradiated rats and non-irradiated ones.

• The Journal of Korean Society for Radiation Therapy
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• v.9 no.1
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• pp.87-93
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• 1997

The using of compensator is required to adjust the irregular dose distribution due to irregular thickness of the body in Total Body Irradiation. Aluminuim, copper or lead is generally used as compensator. In our study, we would like to introduce a result of the attenuation and compensation effect of radiation use compensator made by duralumin and its clinical use. The thickness of compensator was calculated by the attenustion of radiation, which was measured by polystyrene phantom and ionization chamber(farmer). The compensation effect of radiation was measured by diode detector. All of conditions were set as in real treatment, and the distanc from source to detector was 446 cm. We also made fixation of device to easily attach the compensator to LINAC. Beam spoiler was menufactured and placed on the patient to irradiate sufficient dose to the skin. diode detector were placed on head, neck, chest, umbilicus. pelvis and knee with each their entranced exit points, and datas of dose distribution were evaluated and compared in each points for eleven patients(Feb. 96-Feb. 97). The attenuation rate of irradiation by duralumin compensator was measured as $1.4\%$ in 2mm thickness. The mean attenuation rate was $1.3\%$ per 2mm as increasing the thickness gradually to 50 mm. By using duralunim compensator, dose distribution in each points of body was measured with ${\pm}2.8\%$ by diode detectior. We could easily calculate the thickness of compensator by measuring the attenuation rate of radiation, remarkably reduce the irragularity of dose distribution duo to the thickness of body and magnify the effect of radiation therapy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.401-410
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• 2017

In this work, we show that the excessive lattice heating problem due to parasitic pnp transistor action in the diode electrostatic discharge (ESD) protection device in the diode input protection circuit, which is favorably used in CMOS RF ICs, can be solved by adopting a symmetrical cathode structure. To explain how the recipe works, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-dimensional device simulator. We attempt an in-depth comparison study by varying device structures to suggest valuable design guidelines in designing the protection diodes connected to the $V_{DD}$ and $V_{SS}$ buses. Even though this work is based on mixed-mode simulations utilizing device and circuit simulators, the analysis given in this work clearly explain the mechanism involved, which cannot be done by measurements.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.2
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• pp.306-316
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• 2016

In this paper, an NMOS-diode eFuse OTP (One-Time Programmable) memory cell is proposed using a parasitic junction diode formed between a PW (P-Well), a body of an isolated NMOS (N-channel MOSFET) transistor with the small channel width, and an n+ diffusion, a source node, in a DNW (Deep N-Well) instead of an NMOS transistor with the big channel width as a program select device. Blowing of the proposed cell is done through the parasitic junction formed in the NMOS transistor in the program mode. Sensing failures of '0' data are removed because of removed contact voltage drop of a diode since a NMOS transistor is used instead of the junction diode in the read mode. In addition, a problem of being blown for a non-blown eFuse from a read current through the corresponding eFuse OTP cell is solved by limiting the read current to less than $100{\mu}A$ since a voltage is transferred to BL by using an NMOS transistor with the small channel width in the read mode.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.4
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• pp.203-208
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• 2007

고출력 다이오드레이저(High Power Diode Laser, HPDL)는 독일을 중심으로 한 유럽내의 여러 국가에서 적용분야를 점차 높여가고 있으며, 금속소재에 있어서의 높은 흡수율 및 발진장치의 높은 에너지 변환효율이 중요한 요인이라고 할 수 있다. 레이저소스로부터 출력되는 사각형 또는 라인형의 레이저-빔은 다이오드레이저를 이용한 금속의 열처리분야에 매우 적합하며, 이미 Body-in-White 차체(Car Body) 양산라인의 브레이징 공정에는 수 년 전부터 실제 적용되어왔다. 또한, 다양한 빔 형상, 균일한 에너지 밀도, 낮은 운전비용, 간단한 유지보수, 좁은 설치공간, 손쉽게 이동이 가능한 구조, 광케이블을 이용한 레이저-빔의 전송 등 여러 장점으로 인하여 보다 유연하고 효과적인 생산환경을 구축할 수 있다는 것 또한 다이오드레이저의 응용분야를 확대하는 요인이 되었다.