• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.807-813
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• 2008

The gate-biases of the Doherty power amplifier are controlled to improve the linearity performance. The linearity improvement mechanism of the Doherty amplifier is the harmonic cancellation of the carrier and peaking amplifier at the output power combining point. However, it is difficult to cancel the harmonic power for the broader power range because the condition for cancelling is varied by power. For the linearity improvement, we have explored the linearity characteristic of the Doherty amplifier according to the input power and gate biases of the carrier and peaking amplifier. To extend the region of harmonic power cancellation, we have injected the proper gate bias to the carrier and peaking amplifier according to the input power levels. To validate the linearity improvement, the Doherty amplifier is designed using Eudyna 10-W PEP GaN HEMT EGN010MKs at 2.345 GHz and optimized to achieve a high linearity and efficiency at an average output power of 33 dBm, backed off about 10 dB from the $P_{1dB}$. In the experiments, the envelope tracking Doherty amplifier delivers a significantly improved adjacent channel leakage ratio performance of -37.4 dBc, which is an enhancement of about 2.8 dB, maintaining the high PAE of about 26 % for the WCDMA 1-FA signal at an average output power of 33 dBm. For the 802.16-2004 signal, the amplifier is also improved by about 2 dB, -35 dB.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of the Korean Society of Food Science and Nutrition
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• v.31 no.4
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• pp.664-671
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• 2002

To investigate the effects of different type of dietary fat on survival metabolism of fasting rats, one group rats (FO) were fasted, another one group rats (BM) were fed normal diet and the others were fed only one of the following fat diets: beef tallow (FT), corn oil (FC), and perilla oil (FP) of 11.4g/kg respectively. Most FO group rats survived for 6 days and large part of the only-fat-diet groups rats survived for 16 days. Body weights of all rats in fasting and only-fat-groups, measured just one day prior to death owing to fasting or caloric malnutrition, decreased by 24.5%~25% only-fat to fasting rat somewhat extended the survival time but the specific properties of dietary fat types had no remarkably differential effect on survival time and body weight gain rate. The features of liver and kidney weight gain rate of all rats in fasting and only-fat-diet groups were similar to those of body weight gain rate. In FO groups blood levels of total-cholesterol, triglyceride, and glucose markedly reduced whereas GPT activities and BUN levels considerably increased as compared to BM group. However the types of dietary fat perse did not affect blood total cholesterol, triglyceride, glucose, BUN levels, and GPT activities in early stage of fasting in FC and FP group. GPT activities in rats of FP group just prior to death of starvation seemed to be affected by the dietary fat types. The results showed that only-fat-feeding to fasting rats somewhat extended survival time but the types of dietary fat had no remarkably differential effect on survival time and metabolism of fasting rats.

• Investigative Magnetic Resonance Imaging
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• v.20 no.3
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• pp.167-174
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• 2016

Purpose: To identify magnetic resonance imaging (MRI) findings of leukemic infiltration of optic nerve and optic neuritis in leukemic patients with emphasis of clinical findings as reference standard to differentiate them. Materials and Methods: MRI and clinical findings of 7 patients diagnosed as leukemic infiltration of optic nerve (n = 5) and optic neuritis (n = 2) in our institution between July 2006 and August 2015were reviewed retrospectively. In particular, MR imaging findings involved perineural enhancement and thickening of optic nerve and its degree, signal intensity, laterality (unilateral/bilateral), intraconal fat infiltration and its degree, and associated central nervous system abnormalities. Results: Of 5 cases of leukemic infiltration of optic nerve, 4 cases showed positive cerebrospinal fluid (CSF) study for leukemia relapse and 1 case was positive on bone marrow (BM) biopsy only. Moreover, of 5 leukemic infiltration of optic nerve, 2 cases showed the most specific MR findings for leukemic central nervous system involvement including 1 prominent leptomeningeal enhancement and 1 chloroma. However, other MR imaging findings of the patients with leukemic infiltration or optic neuritis such as thickening and perineural enhancement of optic nerves are overlapped. Conclusion: Enhancement and thickening of optic nerve were overlapped MR findings in leukemic infiltration of optic nerve and optic neuritis. Our findings suggest that enhancing optic nerve thickening with associated central nervous system MR abnormality favors the diagnosis of leukemic infiltration of optic nerve, especially in patients with history of acute lymphoblastic leukemia. However, CSF and BM study were required for differentiation between leukemic infiltration of optic nerve and optic neuritis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.6
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• pp.726-732
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• 2019

In this study, we proposed an asymmetric differential inductor to improve the linearity of differential power amplifiers. Considering the phase error between differential signals of the differential amplifier, the location of the center tap of the differential inductor was modified to minimize the error. As a result, the center tap was positioned asymmetrically inside the differential inductor. With the asymmetric differential inductor, the AM-to-AM and AM-to-PM distortions of the amplifier were suppressed. To confirm the feasibility of the inductor, we designed a 2.4 GHz differential CMOS PA for IEEE 802.11n WLAN applications with a 64-quadrature amplitude modulation (QAM), 9.6 dB peak-to-average power ratio (PAPR), and a bandwidth of 20 MHz. The designed power amplifier was fabricated using the 180-nm RF CMOS process. The measured maximum linear output power was 17 dBm, whereas EVM was 5%.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.1-8
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• 1998

An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

• Journal of electromagnetic engineering and science
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• v.7 no.4
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• pp.175-182
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• 2007

In this paper, a study on the reflector type frequency doubler, to suppress the undesired harmonics, is presented. A 12 to 24 GHz reflective frequency doubler is simulated and experimented. Design procedure of the frequency doubler with reflector is provided and the frequency doubler with good spectral purity is fabricated successfully. It has harmonic suppression of the $40{\sim}50\;dBc$ in the $1^{st}$ harmonic and the $50{\sim}60\;dB$ in the $3^{rd}$ harmonic with no additional filter. And, it has conversion gain with the input power of 0 dBm over bandwidth of 500 MHz. A NEC's ne71300(N) GaAs FET is used and the nonlinear model(EEFET3) using IC-CAP program is extracted for harmonic load pull simulation. Good agreement between simulated and measured results has been achieved.

• Journal of Korean Society of Steel Construction
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• v.8 no.4 s.29
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• pp.133-133
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• 1996

Application of the relationship $da/dN=C({\Delta}K)^{m}$ is effective in the analysis of fatigue crack growth life. The values of material constant C and m have great influences on the predicted fatigue life and the relationship between fatigue crack growth rate(da/dN) and stress intensity factor range(${\Delta}K$) is effective in fatigue crack growth behavior. In this paper, fatigue crack growth behavior of the welded joints in HT60 grade TMCP(Thermo Machanical Control Process) steel have been studied. To evalute the fatigue crack growth rates of HT60 grade TMCP steel, fatigue test was performed by base metal(BM), heat affected zone(HAZ) and weld metal(WM) in TMCP steel at room temperature. We determined the relationship of $da/dN-{\Delta}K$ by correlation between C and m obtained from the Paris-Erdogan power law data supplied HT60 grade TMCP steel. The obtained results from this study indicate that fatigue crack growth rate of TMCP steel is not influenced by softening effect which occurs in the HAZ when high heat input weld is carried out. Softening effects, which affect fatigue properties. are shown that it is not affected to the fatigue growth rates significantly.

• Journal of electromagnetic engineering and science
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• v.14 no.3
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• pp.284-292
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• 2014

This paper presents a characteristic evaluation of commercial gallium nitride (GaN) transistors having two different gate-lengths of $0.4-{\mu}m$ and $0.25-{\mu}m$ in the design of a class-S power amplifier (PA). Class-S PA is operated by a random pulse-width input signal from band-pass delta-sigma modulation and has to deal with harmonics that consider quantization noise. Although a transistor having a short gate-length has an advantage of efficient operation at higher frequency for harmonics of the pulse signal, several problems can arise, such as the cost and export license of a $0.25-{\mu}m$ transistor. The possibility of using a $0.4-{\mu}m$ transistor on a class-S PA at 955 MHz is evaluated by comparing the frequency characteristics of GaN transistors having two different gate-lengths and extracting the intrinsic parameters as a shape of the simplified switch-based model. In addition, the effectiveness of the switch model is evaluated by currentmode class-D (CMCD) simulation. Finally, device characteristics are compared in terms of current-mode class-S PA. The analyses of the CMCD PA reveal that although the efficiency of $0.4-{\mu}m$ transistor decreases more as the operating frequency increases from 955 MHz to 3,500 MHz due to the efficiency limitation at the higher frequency region, it shows similar power and efficiency of 41.6 dBm and 49%, respectively, at 955 MHz when compared to the $0.25-{\mu}m$ transistor.