• Title/Summary/Keyword: BiTe

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Investigation of Spark Plasma Sintering Temperature on Microstructure and Thermoelectric Properties of p-type Bi-Sb-Te alloys

  • Han, Jin-Koo;Shin, Dong-won;Madavali, Babu;Hong, Soon-Jik
    • Journal of Powder Materials
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    • v.24 no.2
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    • pp.115-121
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    • 2017
  • In this work, p-type Bi-Sb-Te alloys powders are prepared using gas atomization, a mass production powder preparation method involving rapid solidification. To study the effect of the sintering temperature on the microstructure and thermoelectric properties, gas-atomized powders are consolidated at different temperatures (623, 703, and 743 K) using spark plasma sintering. The crystal structures of the gas-atomized powders and sintered bulks are identified using an X-ray diffraction technique. Texture analysis by electron backscatter diffraction reveals that the grains are randomly oriented in the entire matrix, and no preferred orientation in any unique direction is observed. The hardness values decrease with increasing sintering temperature owing to a decrease in grain size. The conductivity increases gradually with increasing sintering temperature, whereas the Seebeck coefficient decreases owing to increases in the carrier mobility with grain size. The lowest thermal conductivity is obtained for the bulk sintered at a low temperature (603 K), mainly because of its fine-grained microstructure. A peak ZT of 1.06 is achieved for the sample sintered at 703 K owing to its moderate electrical conductivity and sustainable thermal conductivity.

Nanoprobing Charge Transport Properties of Strained and Indented Topological Insulator

  • Hwang, Jin Heui;Kwon, Sangku;Park, Joonbum;Lee, Jhinhwan;Kim, Jun Sung;Lyeo, Ho-Ki;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.128.1-128.1
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    • 2013
  • We investigated the correlation between electrical transport and mechanical stress in $Bi_2Te_2Se$ by using a conductive probe atomic force microscopy in an ultra-high vacuum environment. Uniform distribution of measured friction and current were observed over a single quintuple layer terrace, which is an indication of the uniform chemical composition of the surface. By measuring the charge transport of $Bi_2Te_2Se$ surface as a function of the load applied by a tip to the sample, we found that the current density varies with applied load. The variation of current density was explained in light of the combined effect of the changes in the in-plane conductance and spin-orbit coupling that were theoretically predicted. We suppose that the local density of states is modified by tip-induced strain, but topological phase still remains. We exposed a clean topological insulator surface by tip-induced indentation. The surface conductance on the indented $Bi_2Te_2Se$ surface was studied, and the role of surface oxide on the surface conductance is discussed.

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Enhancement of Thermoelectric Performance in Spark Plasma Sintered p-Type Bi0.5Sb1.5Te3.0 Compound via Hot Isostatic Pressing (HIP) Induced Reduction of Lattice Thermal Conductivity (열간등방가압 공정을 통한 P형 Bi0.5Sb1.5Te3.0 소결체의 격자 열전도도 감소 및 열전 특성 향상)

  • Soo-Ho Jung;Ye Jin Woo;Kyung Tae Kim;Seungki Jo
    • Journal of Powder Materials
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    • v.30 no.2
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    • pp.123-129
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    • 2023
  • High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi0.5Sb1.5Te3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

REDUCTION OF THERMAL CONDUCTIVITY THROUGH THE DISPERSION OF TiC NANOPARTICLES INTO A P-TYPE Bi0.5Sb1.5Te3 ALLOY BY BALL MILLING AND SPARK PLASMA SINTERING

  • CHEENEPALLI NAGARJUNA;BABU MADAVALI;MYEONG-WON LEE;SUK-MIN YOON;SOON-JIK HONG
    • Archives of Metallurgy and Materials
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    • v.64 no.2
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    • pp.551-557
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    • 2019
  • The dispersion of nanoparticles in the host matrix is a novel approach to enhance the thermoelectric performance. In this work, we incorporate the TiC (x = 0, 1 and 2 wt.%) nanoparticles into a p-type Bi0.5Sb1.5Te3 matrix, and their effects on microstructure and thermoelectric properties were systematically investigated. The existence of TiC contents in a base matrix was confirmed by energy dispersive X-ray spectroscopy analysis. The grain size decreases with increasing the addition of TiC content due to grain boundary hardening where the dispersed nanoparticles acted as pinning points in the entire matrix. The electrical conductivity significantly decreased and the Seebeck coefficient was slightly enhanced, which attributes to the decrease in carrier concentration by the addition of TiC content. Meanwhile, the lowest thermal conductivity of 0.97 W/mK for the 2 wt.% TiC nanocomposite sample, which is ~16% lower than 0 wt.% TiC sample. The maximum figure of merit of 0.90 was obtained at 350 K for the 0 wt.% TiC sample due to high electrical conductivity. Moreover, the Vickers hardness was improved with increase the addition of TiC contents.

Reduction of Thermal Conductivity Through Complex Microstructure by Dispersion of Carbon Nanofiber in p-Type Bi0.5Sb1.5Te3 Alloys

  • P. Sharief;B. Madavali;Y. Sohn;J.H. Han;G. Song;S.H. Song;S.J. Hong
    • Archives of Metallurgy and Materials
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    • v.66 no.3
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    • pp.803-808
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    • 2021
  • The influence of nano dispersion on the thermoelectric properties of Bi2Te3 was actively investigating to wide-spread thermoelectric applications. Herein this report, we have systematically controlled the microstructure of Bi0.5Sb1.5Te3 (BST) alloys through the incorporation of carbon nanofiber (CNF), and studied their effect on thermoelectric properties, and mechanical properties. The BST/x-CNF (x-0, 0.05, 0.1, 0.2 wt.%) composites powder was fabricated using high energy ball milling, and subsequently consolidated the powder using spark plasma sintering. The identification of CNF in bulk composites was analyzed in Raman spectroscopy and corresponding CNF peaks were recognized. The BST matrix grain size was greatly reduced with CNF dispersion and consistently decreased along CNF percentage. The electrical conductivity was reduced and Seebeck coefficient varied in small-scale by embedding CNF. The thermal conductivity was progressively diminished, obtained lattice thermal conductivity was lowest compared to bare sample due to induced phonon scattering at interfaces of secondary phases as well as highly dense fine grain boundaries. The peak ZT of 0.95 achieved for 0.1 wt.% dispersed BST/CNF composites. The Vickers hardness value of 101.8 Hv was obtained for the BST/CNF composites.

Preparation of $Bi_2Te_3$ Thermoelectric Materials by Co-precipitation Method (공침법을 이용한 $Bi_2Te_3$ 열전재료의 제조)

  • Kim, Dong-Hwan;Im, Hee-Joong;Je, Koo-Chul;Kang, Young-Jin;Ahn, Jeung-Sun;Tadaoki Mitani;Nam, Tae-Hyun;Shim, Young-Jae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.167-167
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    • 2003
  • 현대 산업이 발전함에 따라 전자부품의 초소형화, 고성능화가 요구되어지고 있으며, 이러한 점에 부응하기 위하여 Pottier 효과를 이용하여 국부냉각이 가능한 열전재료에 대한 많은 연구가 이루어지고 있다. 열전재료에는 사용온도 영역에 따라 여러 종류가 있지만, Bi-Te계 열전재료는 상온영역에서 가장 성능지수(Z=$\alpha$$^2$$\sigma$/$textsc{k}$, $\alpha$는 Seebeck 계수, $\sigma$는 전기전도도, $textsc{k}$는 열전도도)가 높아 각종 냉각소자로서 사용되어 지고 있다. 하지만, 초소형 전자부품의 국부냉각을 위해서는 성능지수의 향상, 특히, 저온 영역에서의 성능지수의 향상이 요구되고 있다. 본 연구에서는 Bi-Te계 열전재료의 성능지수를 향상시키기 위하여, 열전도도의 저하에 의한 성능지수의 향상을 연구목적으로 하였다 열전도도는 전자에 의한 열전도도(K$_{e}$)와 phonon에 의한 열전도도(K$_{p}$)로 이루어지며, 전기전도도에 큰 영향을 미치지 않는 결정립 사이즈영역에서 결정립의 크기를 미세화 하면, 결정입계에서의 phonon의 산란이 증가하여 phonon에 의한 열전도도를 저하시킴으로서 성능지수의 향상이 기대된다. 따라서 본 연구에서는 나노사이즈 분말의 제조에 많이 이용되며 입자크기의 조절이 용이한 공침법을 이용하여 Bi-Te계 열전재료 분말을 제조하고 열전재료에의 적용가능성을 검토하였다.

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Synthesis and Low-concentration (50 ppm) NO2 Sensing Properties of Bare and ZnO (n) Decorated TeO2 (p) Nanowires (ZnO가 첨가된 TeO2 나노와이어의 합성 및 저농도(50 ppm) 이산화질소 가스 센싱 특성)

  • Yu, Dong Jae;Shin, Ka Yoon;Oum, Wansik;Kang, Suk Woo;Kim, Eun Bi;Kim, Hyeong Min;Kim, Hyoun Woo
    • Korean Journal of Materials Research
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    • v.32 no.10
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    • pp.435-441
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    • 2022
  • We report the synthesis and gas sensing properties of bare and ZnO decorated TeO2 nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO2 NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO2 NWs with desired phase and morphology. NO2 gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO2 gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO2 NWs sensor showed much better sensitivity towards NO2 relative to a bare TeO2 NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO2 NWs sensor was attributed to the formation of ZnO (n)/ TeO2 (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

Fabrication Process and Power Generation Characteristics of Thermoelectric Thin Film Devices for Micro Energy Harvesting (미세 열에너지 하비스팅용 열전박막소자의 형성공정 및 발전특성)

  • Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.67-74
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    • 2018
  • Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

Simulation of Horizontal Thin-film Thermoelectric Cooler for the Mobile Electronics Thermal Management (모바일 전자기기의 열점 제어를 위한 수평형 박막 열전 냉각 소자의 모사 해석)

  • Park, Sangkug;Park, Hong-Bum;Joo, Young-Chang;Joo, Youngcheol
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.2
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    • pp.17-21
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    • 2017
  • Horizontal thin-film thermoelectric cooler has been simulated using a commercial software (ANSYS Workbench Thermal-electric). The thermoelectric cooler consists of thin-film n-type $Bi_2Te_3$, p-type $Sb_2Te_3$ thermoelectric elements, and Au electrode, respectively. The hot spot was placed under the center of device which represents Joule heating. Numerical analysis was conducted by geometric variable, and a maximum temperature difference of $13^{\circ}C$ was obtained. As from the simulation parameters, we presented an optimized design for high efficiency cooling.

Antireflection Structures and Optical Recording Properties of Te-based Alloy Thin Films (Te계 합금 박막의 Antireflection 구조와 광기록 특성)

  • Lee, Hyun-Yong;Choi, Dae-Young;Lee, Young-Jong;Chung, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.05a
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    • pp.74-77
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    • 1988
  • This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

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