• 한국재료학회지
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• 제8권5호
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• pp.413-418
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• 1998

Electrical and Thermoelectric Properties of$ SbI_{3}$-doped 85% 85% $BiTe_{2}$$Se_{3}$ 단결정에서 전하 이동에 대한 살란인자는 0.1이었으며, 전자이동도와 정공이동도의 비($\mu_{e}$ /$\mu_{h}$ )는 1.45이었다. $SbI_{3}$의 첨가량이 증가할수록 전자 농도의 증가로 Seebek 계수와 전기비저항이 감소하며, Seebeck 계수와 전기비저항이 최대값을 나타내는 온도가 고온으로 이동하였다. $SbI_{3}$를 첨가한 85%$Bi_{2}$$Te_{3}$단결정에서 성능지수의 최대값은 $SbI_{3}$를 0.1 wt%첨가한 조성에서 $2.0 x 10^{-3}$ K이었다.

• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.497-501
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• 2010

Nano structure $Bi_2Te_3$ films were deposited on (100) GaAs substrates using a modified MOCVD system and the effect of growth parameters on the structural properties were investigated. Different from conventional MOCVD systems, our reactor consist of pressure control unit and two heating zones ; one for formation of nano-sized particles and the other for the growth of nano particles on substrates. By using this instrument we successfully grow $Bi_2Te_3$ films with nano-grain size. The film grown at high reactor pressure has large grain size. On the contrast, the grain size decreases with a decrease in pressure of the reactor. Here, we introduce new growth methods of nano-grain structured $Bi_2Te_3$ films for high thermoelectric figure of merit.

• 한국분말재료학회지
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• 제13권5호
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• pp.313-320
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• 2006

The present study is to analyze the thermoelectric properties of $Bi_{0.4}Sb_{1.6}Te_3$ thermoelectric materials fabricated by the mechanical grinding process. The $Bi_{0.4}Sb_{1.6}Te_3$ powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed $Bi_{0.4}Sb_{1.6}Te_3$ powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the $Bi_{0.4}Sb_{1.6}Te_3$ sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.454-458
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• 2017

$Bi_2Te_3$-based alloys have been intensively investigated as active materials for thermoelectric power generation devices from low-temperature (< $250^{\circ}C$) waste heat. In the present study, we fabricated Pb-doped, p-type $Bi_{0.48}Sb_{1.52}Te_3$ polycrystalline bulks by using meltsolidification and spark plasma sintering techniques, and evaluated their thermoelectric transport properties in an effort to develop optimized composition for low-temperature power generation applications. The electronic and thermal transport properties of $Bi_{0.48}Sb_{1.52}Te_3$ could be manipulated by Pb doping. As a result, the temperature for a peak thermoelectric performance (zT) gradually shifted toward higher temperatures with Pb content, suggesting that thermoelectric power generation efficiency can be enhanced by controlled Pb doping.

• 한국진공학회지
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• 제6권1호
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• pp.69-76
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• 1997

순간 증착법으로 $Bi_{0.5}Sb_{1.5}Te_3$(p형)와 $Bi_2Te_{2.4} Se_{0.6}$(n형) 박막을 제조하여 두께와 어닐 링 조건에 따른 Seebeck 계수, 전기전도도, carrier 농도 및 이동도, 열전도도, 성능지수의 변화 등 열-전기적 특성을 조사하였다. 473K에서, 1시간 진공 열처리한 결과 p형과 n형의 성능지구는 각각 $1.3{\times}10^{-3}K^{-1}$ 및 $0.3{\times}10^{-3}K^{-1}$으로 향상되었으며 두께에 크게 의존하지 않았 다. 이런 성질을 갖는 열전 박막을 소자화한 박막 온도 센서를 유리와 Teflon기판 위에 제 조하였으며, 이들의 온도 변화에 대한 열기전력, 민감도 및 시간 상수 등 센서 특성을 측정 하였다. p 및 n형의 leg 폭 1mm$\times$길이 16mm인 박막 온도 센서의 경우, Teflon 기판일 때 좋은 성능을 나타내었으며, 민감도는 2.91V/W, 시간 상수는 28.2초이었다.

• 한국재료학회지
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• 제9권11호
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• pp.1112-1116
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• 1999

$\textrm{Bi}_{2}\textrm{Te}_{3}$의 고/액 계면을 통하여 전류밀도와 방향을 달리 하면서 통전시켰을 때 발생하는 고상, 액상 및 고/액 계면에서의 미소 온도변화를 측정하였다. 이 냉각(가열) 효과는 전류밀도, 통전방향 및 시간에 따라 다르게 나타났으며, 온도변화에 미치는 Peltier 열, Thomson 열 및 Joule 열의 영향을 이론 및 실험에 의해 각각 분류하였다. $\textrm{Bi}_{2}\textrm{Te}_{3}$의 고/액상간의 Peltier 계수는 -1.10$\times\textrm{10}^{-1}$V이었으며, 고상과 액상의 Thomson 계수는 각각 7.31\times\textrm{10}^{-4}V/K와 5.77\times\textrm{10}^{-5}V/K이었다. 직류를 통전하면서 Bi$_2$Te$_3$결정을 성장한 결과, 고상에서 액상으로 통전한 경우, Peltier 냉각에 의한 온도구배의 상승으로 방향성이 향상된 결정을 얻을 수 있었지만, 전류의 방향을 반대로 하면, 결정성 향상에 별 도움을 주지 못하였다.

• 한국분말재료학회지
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• 제18권5호
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• pp.437-442
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• 2011

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. $Bi_2Te_{2.7}Se_{0.3}$ powder was synthesized from a mixture of $Bi_2O_3$, $TeO_2$, and $SeO_2$ powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the $Bi_2Te_{2.7}Se_{0.3}$ powder synthesized at $360^{\circ}C$ showed about 0.5 of the figure of merit (ZT) at room temperature.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 마이크로전자및패키징학회지
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• 제26권2호
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• pp.45-49
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• 2019

높은 신뢰성의 n형 Bi-Te-Se계 열전소자 제조를 위한 열간압출 공정을 확립하였다. 용융-응고 공정을 이용하여 Bi-Te-Se 원료잉곳을 합성하였으며, 고에너지 볼밀을 이용하여 평균 ${\sim}30{\mu}m$ 크기의 분말로 분쇄하였다. 일축가압 공정으로 분말을 직경 20 mm의 디스크 형태로 성형한 후 압출용 몰드 설계-제작 및 열간압출 공정 온도와 압력을 제어하여 성형체로부터 00l 방향으로 결정 배향된 지름 1.8 mm의 원통형 고밀도 압출체를 제조하였다. 상온에서 최대 ${\sim}4.1mW/mK^2$의 높은 파워팩터를 나타냈으며, zone melting 공정으로 제조한 상용 열전소재와 비교하여 2배 이상 향상된 기계적 강도 (~50 MPa)를 구현하였다.