• Title/Summary/Keyword: Bi-phase

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Growth and characterization of a Bi-Sr-Ca-Cu-O phase by crystal pulling method (Crystal pulling법에 의한 Bi-Sr-Ca-Cu-O계의 결정 성장과 특성 평가)

  • Yoon, D.H.;Sato, N.;Yoshimoto, N.;Yoshizawa, M.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.1-5
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    • 1997
  • The $Bi_2Sr_2Ca_{n-1}Cu_nOy$(BSCCO) phase is well known to be a superconductor having a strong anisotropic behavior. It can be seen that it is difficult to control the growth direction. In this study, we try to grow a Bi-Sr-Ca-Cu-O phase crystal by the crystal pulling method with a seed crystal and crucibel rotation. Relatively large crystals of the order of $5{\times}5{\times}5{\textrm}{mm}^3$ dimensions can be obtained. We also discuss the possible crystallization field of the $BiO_{1.5}$-(Sr, Ca)O-CuO ternary phase diagram, and present some results of the characterization and magnetic measurements on the grown crystal.

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Effect of Bi4Zr3O12 on the properties of (KxNa1-x)NbO3 based ceramics

  • Mgbemere, Henry. E.;Akano, Theddeus T.;Schneider, Gerold. A.
    • Advances in materials Research
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    • v.5 no.2
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    • pp.93-105
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    • 2016
  • KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

The effect of heat treatment condition on superconducting property and phase analysis of Bi-2223 tapes (Bi-2223 초전도 선재의 열처리에 따른 초전도 특성 및 상분석)

  • Choi, Jeong-Kyu;Ha, Hong-Soo;Lee, Dong-Hun;Yang, Ju-Saeng;Hwang, Sun-Yuk;Ha, Dong-Woo;Oh, Sang-Soo;Kwon, Yeong-Kil;Lee, Se-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.73-76
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    • 2003
  • Phase transformation of Bi-2223 tape during the final heat treatment has been investigated through the various duration time of heat treatment in a specially designed 3-step heat treatment. It was found that the phase assemblage in the sintering was determined by the sintering time and temperature. In this study, sintering time was changed to optimize the Bi-2223 phase assemblage, and acquire high critical current density. High critical current samples with Ic = 85 A and Je = 8.9 kA/$cm^2$ have been measured at 77K and self-field for 55-filament tapes sintered by optimum condition.

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Wafer-Level MEMS Capping Process using Electrodeposition of Ni Cap and Debonding with SnBi Solder Layer (Ni 캡의 전기도금 및 SnBi 솔더 Debonding을 이용한 웨이퍼 레벨 MEMS Capping 공정)

  • Choi, J.Y.;Lee, J.H.;Moon, J.T.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.23-28
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    • 2009
  • We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

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Preparation and Magnetic Properties of MnBi Alloy and its Hybridization with NdFeB

  • Truong, Nguyen Xuan;Vuong, Nguyen Van
    • Journal of Magnetics
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    • v.20 no.4
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    • pp.336-341
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    • 2015
  • MnBi alloys were fabricated by arc melting and annealing at 573 K. The heat treatment enhanced the content of the low-temperature phase (LTP) of MnBi up to 83 wt%. The Bi-excess assisted LTP MnBi alloys were used in the hybridization with the Nd-Fe-B commercial Magnequench ribbons to form the hybrid magnets (100-x)NdFeB/xMnBi, x = 20, 30, 40, 50, and 80 wt%. The as-milled powder mixtures of Nd-Fe-B and MnBi were aligned in a magnetic field of 18 kOe and warm-compacted to anisotropic and dense bulk magnets at 573 K by 2,000 psi for 10 min. The magnetic ordering of two hard phase components strengthened by the exchange coupling enhanced the Curie temperature ($T_c$) of the magnet in comparison to that of the powder mixture sample. The prepared hybrid magnets were highly anisotropic with the ratio $M_r/M_s$ > 0.8. The exchange coupling was high, and the coercivity $_iH_c$ of the magnets was ~11-13 kOe. The maximum value of the energy product $(BH)_{max}$ was 8.4 MGOe for the magnet with x = 30%. The preparation of MnBi alloys and hybrid magnets are discussed in details.

Sintering Period Dependence of Composition and Superconducting Properties of (BiPb)SrCaCuOx System ((BiPb)SrCaCuOx계에서 소결시간에 따른 조성과 초전도 성질의 변화)

  • Prak, S.;Im, H. B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.10a
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    • pp.98-101
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    • 1988
  • The material system (Bi$\sub$0.7/Pb$\sub$0.3/)Sr$_1$Ca$_1$Cu$\sub$1.8/Ox forms, at 845$^{\circ}C$, two major phases having a high Tc(100K) and a low Tc(∼70K) both of which consists of platelets and a non-superconducting minor phase which has rod-like shape and isolated by the major phases. As the sintering period increases, the amount of high Tc phase increases accompanying the decrease in low Tc phase while the amount of the non-superconducting phase is sintering period independent, resulting in a superconductor with Tc of 100K. Changes in compositions of each phase also occur during sintering due to evaporation of bismuth and lead.

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The Effect of Sintering Time on the Stabilization of the Bi-Pb-Sr-Ca-Cu-O Superconducting Phase (Bi-Pb-Sr-Ca-Cu-O 초전도상의 안정화에 미치는 소결시간의 영향)

  • 형경우;박성호;이두원;한태종;최범식;김창은
    • Journal of the Korean Ceramic Society
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    • v.29 no.2
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    • pp.95-100
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    • 1992
  • A high-Tc superconducting phase was obtained using long sintering time of 210 hours. From XRD and SEM analyses, it could be confirmed that the particles were plate phase, of which the structure is tetragonal system with lattice parameter a=b=5.44${\AA}$, C=37.18${\AA}$. Resistance and current density measurements were carried out using 4 probe method. The experimental data revealed that the stable high-Tc superconducting phase was easily formed by addition of Pb to Bi-system. Therefore, we could find the sintering condition to synthesis the system having the largest fraction of high Tc phase.

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Growth of Bi:YIG Thick Films by Change of PO/Bi2O3 Molar Ratio (PO/Bi2O3 변화에 따른 Bi:YIC 단결정 후박의 성장)

  • 윤석규;김근영;김용탁;정현민;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.589-593
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    • 2002
  • The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

Microwave Dielectric Properties of Sb substituted $BiNbO_4$ Ceramics (Sb 치환에 따른 $BiNbO_4$ 세라믹스의 고주파 유전특성의 변화)

  • Lim, Hyouk;Oh, Young-Jei;Chio, Seo-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.646-649
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    • 2002
  • The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

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Effect of Mg Additive in the Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06O10+δ(110 K phase) Superconductors (Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06O10+δ(110 K 상)산화물 고온초전도체에 Mg 첨가에 따른 영향)

  • 이민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.522-531
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    • 2003
  • Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{\delta}}$ high- $T_{c}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with MgO of 5~30 wt% each were sintered at 820~86$0^{\circ}C$ for 24 hours. The structural characteristics, critical temperature, grain size and image of mapping with respect to MgO contents were analyzed by XRD(X-Ray Diffraction), SEM(Scanning Electron Microscope) and EDS(Energy dispersive X-ray spectrometer) respectively. As MgO contents increased, intensity of MgO Peaks and ratio of Bi-2212 phase in superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.