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In Vivo Dosimetry with MOSFET Detector during Radiotherapy (방사선 치료 중 MOSFET 검출기를 이용한 체표면 선량측정법)

  • Kim Won-Taek;Ki Yong-Gan;Kwon Soo-Il;Lim Sang-Wook;Huh Hyun-Do;Lee Suk;Kwon Byung-Hyun;Kim Dong-Won;Cho Sam-Ju
    • Progress in Medical Physics
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    • v.17 no.1
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    • pp.17-23
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    • 2006
  • In Vivo dosimetry is a method to evaluate the radiotherapy; it is used to find the dosimetric and mechanical errors of radiotherapy unit. In this study, on-line In Vivo dosimetry was enabled by measuring the skin dose with MOSFET detectors attached to patient's skin during treatment. MOSFET dosimeters were found to be reproducible and independent on beam directions. MOSFET detectors were positioned on patient's skin underneath of the dose build-up material which was used to minimize dosimetric error. Delivered dose calculated by the plan verification function embedded in the radiotherapy treatment planning system (RTPs), was compared with measured data point by point. The dependency of MOSFET detector used in this study for energy and dose rate agrees with the specification provided by manufacturer within 2% error. Comparing the measured and the calculated point doses of each patient, discrepancy was within 5%. It was enabled to verify the IMRT by using MOSFET detector. However, skin dosimetry using conventional ion chamber and diode detector is limited to the simple radiotherapy.

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Evaluation of the Radiochromic Film Dosimetry for a Small Curved Interface (휘어진 경계에서의 좁은 영역에 대한 Radiochromic 필름 도시메트리 평가)

  • Kang, Sei-Kwon;Park, Soah;Hwang, Taejin;Cheong, Kwang-Ho;Han, Taejin;Kim, Haeyoung;Lee, Me-Yeon;Kim, Kyoung Ju;Bae, Hoonsik
    • Progress in Medical Physics
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    • v.23 no.4
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    • pp.234-238
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    • 2012
  • A tumor on the eyelid is often treated using a high-energy electron beam, with a metallic eye shield inserted between the eyelid and the eyeball to preserve the patient's sight. Pretreatment quality assurance of the inner eyelid dose on the metallic shield requires a very small dosimetry tool. For enhanced accuracy, a flexible device fitting the curved interface between the eyelid and the shield is also required. The radiochromic film is the best candidate for this device. To measure the doses along the curved interface and small area, a 3-mm-wide strip of EBT2 film was inserted between the phantom eyelid and the shield. After irradiation with 6 MeV electron beams, the film was evaluated for the dose profile. An acrylic eye shield of the same size as the real eye shield was machined, and CT images free from metal artifacts were obtained. Monte Carlo simulation was performed on the CT images, taking into account eye shield material, such as tungsten, aluminum, and steel. The film-based interface dose distribution agreed with the MC calculation within 2.1%. In the small (millimeter scale) and curved region, radiochromic film dosimetry promises a satisfactory result with easy handling.

Fabrication of the Low Driving Voltage ZnS:Mn EL Device and Investigation of its Electro-optical Properties (저전압구동 ZnS:Mn EL device의 제작 및 전기 광학적 특성조사)

  • Kim, Jae-Beom;Kim, Do-Hyeong;Jang, Gyeong-Dong;Bae, Jong-Gyu;Nam, Gyeong-Yeop;Lee, Sang-Yun;Jo, Gyeong-Je;Jang, Hun-Sik;Lee, Hyeon-Jeong;Lee, Dong-Uk
    • Korean Journal of Materials Research
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    • v.10 no.4
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    • pp.290-294
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    • 2000
  • ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

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Intraoperative Radiotherapy (IORT) for Locally Advanced Colorectal Cancer (대장-직장암의 수술중 방사선 치료)

  • Kim, Myung-Se;Kim, Sung-Kyu;Kim, Jae-Hwang;Kwan, Koing-Bo;Kim, Heung-Dae
    • Radiation Oncology Journal
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    • v.9 no.2
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    • pp.265-270
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    • 1991
  • Colorectal cancer is the second most frequent malignant tumor in the United States and fourth most frequent tumor in Korea. Surgery has been used as a primary treatment modality but reported overall survivals after curative resection were from $20\%\;to\;50\%$. Local recurrence is the most common failure in the treatment of locally advanced colorectal cancer. Once recurrence has developed, surgery has rarely the role and the five year survival of locally advanced rectal cancer is less than $5\%$, in spite of massive combination therapy. Intraoperative radiotherapy (IORT) with or without external beam irradiation has been advocated for reducing local recurrence and improving survival. The recent report of local failure by this modality was only $5\%$, this indicated that significant improvement of local control could be achieved. We performed 6 cases of IORT for locally advanced colorectal cancer which is the first experience in Korea. Patient's eligibility, treatment applicator, electron energy, dose distribution on the surface and depth within the treatment field and detailed skills are discussed. We hope that our IORT protocol can reduce local failure and increase the long term survival significantly.

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Strain induced/enhanced ferromagnetism in $Mn_3Ge_2$thinfilms

  • Dung, Dang Duc;Feng, Wuwei;Thiet, Duong Van;Sin, Yu-Ri-Mi;Jo, Seong-Rae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.135-135
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    • 2010
  • In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

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Microstructure evolution and effect on deuterium retention in oxide dispersion strengthened tungsten during He+ irradiation

  • Ding, Xiao-Yu;Xu, Qiu;Zhu, Xiao-yong;Luo, Lai-Ma;Huang, Jian-Jun;Yu, Bin;Gao, Xiang;Li, Jian-Gang;Wu, Yu-Cheng
    • Nuclear Engineering and Technology
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    • v.52 no.12
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    • pp.2860-2866
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    • 2020
  • Oxide dispersion-strengthened materials W-1wt%Pr2O3 and W-1wt%La2O3 were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 1021 ions/m2 under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr2O3 and W-1wt%La2O3. At 1.0 × 1020 He+/m2, the average loops size of the W-1wt%Pr2O3 was 4.3 nm, much lower than W-1wt% La2O3 of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 1021 He+/m2 on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He+ pre-irradiation, deuterium (D) retention of doped W materials increased after He+ irradiation, whose retention was unsaturated at the damage level of 1.0 × 1022D2+/m2. The present results implied that irradiation effect of He+ ions must be taken into account to evaluate the deuterium retention in fusion material applications.

High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Analysis of the Engagement Effects of DIRCM against a Man Portable Air Defense System (휴대용대공유도탄에 대응하는 지향성적외선방해장비의 교전효과 분석)

  • Jeong, Chunsik
    • Journal of the Korea Society for Simulation
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    • v.28 no.2
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    • pp.139-147
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    • 2019
  • A MANPADS(Man Portable Air Defense System), which tracks infrared energy, is light enough for individuals to carry and can against to a variety of aircraft, making it widely deployed around the world, posing a major threat to aircraft. A flare has been developed as an IRCM(Infrared Countermeasures) that protects the life of friendly aircraft and combatants by deceiving such guided missiles. However, DIRCM, which can overcome the problems of existing IRCM, is being developed mainly in some developed countries, and the need for it has been increasing gradually. This paper modeled first generation IR seeker of AM modulation method, the second generation IR seeker of FM modulation method, and the third generation IR seeker of pulse modulation method among various MANPADS, and modeled the scattering light phenomenon in the seeker when laser beams are investigated in DIRCM. Using this, jamming simulations were performed in various engagement environments of the MANPADS and aircraft equipped with DIRCM, and the miss distance of the guided missiles and aircraft were analyzed. Simulation results show that DIRCM, which irradiates a modulated laser beam with one jamming code, deceives both first, second and third generation MANPADS at 1km and 2km of engagement distance. In particular, the survival rate of aircraft equipped with DIRCM increased when the distance of engagement increased from 1km to 2km, and the survival rate was at least 99% at 2km of engagement distance.

Synthesis of barium-doped PVC/Bi2WO6 composites for X-ray radiation shielding

  • Gholamzadeh, Leila;Sharghi, Hamed;Aminian, Mohsen Khajeh
    • Nuclear Engineering and Technology
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    • v.54 no.1
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    • pp.318-325
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    • 2022
  • In this study, composites containing undoped and barium-doped Bi2WO6:Ba2+were investigated for their shielding against diagnostic X-ray. At first, Bi2WO6 and barium-doped Bi2WO6 were synthesized with different weight percentages of barium oxide through a hydrothermal process. The as-synthesized nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy (RS). After that, some shields were generated with undoped and barium-doped Bi2WO6:Ba2+ nanostructure particles incorporated into polyvinyl chloride (PVC) polymer with different thicknesses and 15% weight of the nanostructure. Finally, the prepared samples were exposed to an X-ray tube at 40, 80, and 120 kV voltages, 10 mAs and, 44.5 cm SID (i.e. the distance from the X-ray beam source to the specimen). Linear and mass attenuation coefficients were also calculated for different samples. The results indicated that, among the samples, the one with 7.5 mmol barium-doped Bi2WO6 had the most attenuation at the voltage of 40kV, and the attenuation coefficients would increase with an increase in the amount of barium. The samples with 15 and 17.5 mmol barium-doped Bi2WO6 had higher attenuation than the others at 80 and 120 kV. Moreover, the half-value layer (HVL), tenth-value layer (TVL) and 0.25 mm lead equivalent thickness were calculated for all the samples. The lowest HVL value was for the sample with 7.5 mmol barium-doped Bi2WO6. As the result clearly show, an increment in the barium-doping content leads to a decrease in both HVL and TVL. In every three voltages, 0.25 mm lead equivalent thickness of the barium-doped composites (7.5 mmol and 15 mmol) had less than the other composites. The lowest value of 0.25 mm lead equivalent thickness was 7.5 barium-doped in 40 kV voltage and 15 mmol barium-doped in 80 kV and 120 kV voltages. These results were obtained only for 15% weight of the nanostructure.

Development of a polystyrene phantom for quality assurance of a Gamma Knife®

  • Yona Choi;Kook Jin Chun;Jungbae Bahng;Sang Hyoun Choi;Gyu Seok Cho;Tae Hoon Kim;Hye Jeong Yang;Yeong Chan Seo;Hyun-Tai Chung
    • Nuclear Engineering and Technology
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    • v.55 no.8
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    • pp.2935-2940
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    • 2023
  • A polystyrene phantom was developed following the guidance of the International Atomic Energy Association (IAEA) for gamma knife (GK) quality assurance. Its performance was assessed by measuring the absorbed dose rate to water and dose distributions. The phantom was made of polystyrene, which has an electron density (1.0156) similar to that of water. The phantom included one outer phantom and four inner phantoms. Two inner phantoms held PTW T31010 and Exradin A16 ion chambers. One inner phantom held a film in the XY plane of the Leksell coordinate system, and another inner phantom held a film in the YZ or ZX planes. The absorbed dose rate to water and beam profiles of the machine-specific reference (msr) field, namely, the 16 mm collimator field of a GK PerfexionTM or IconTM, were measured at seven GK sites. The measured results were compared to those of an IAEA-recommended solid water (SW) phantom. The radius of the polystyrene phantom was determined to be 7.88 cm by converting the electron density of the plastic, considering a water depth of 8 g/cm2. The absorbed dose rates to water measured in both phantoms differed from the treatment planning program by less than 1.1%. Before msr correction, the PTW T31010 dose rates (PTW Freiberg GmbH, New York, NY, USA) in the polystyrene phantom were 0.70 (0.29)% higher on average than those in the SW phantom. The Exradin A16 (Standard Imaging, Middleton, WI, USA) dose rates were 0.76 (0.32)% higher in the polystyrene phantom. After msr correction factors were applied, there were no statistically significant differences in the A16 dose rates measured in the two phantoms; however, the T31010 dose rates were 0.72 (0.29)% higher in the polystyrene phantom. When the full widths at half maximum and penumbras of the msr field were compared, no significant differences between the two phantoms were observed, except for the penumbra in the Y-axis. However, the difference in the penumbra was smaller than variations among different sites. A polystyrene phantom developed for gamma knife dosimetry showed dosimetric performance comparable to that of a commercial SW phantom. In addition to its cost effectiveness, the polystyrene phantom removes air space around the detector. Additional simulations of the msr correction factors of the polystyrene phantom should be performed.