• Journal of Surface Science and Engineering
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• v.24 no.2
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• pp.103-113
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• 1991

Electroless Ni-Cu-P alloy plating of Al base hard disk was performed to investigate some properties according to the change of composition. It was found that the composition of Ni and Cu in deposits changed linearly with increasing the mole ratio of NiSO4.6H2O/CuSO4.5H2O. The increase in hardness by heat - treatment was confirmed to be associated with small size grained crystallization of the amorphous deposits. Acid resistance of all deposits layer. which had been heated up to 30$0^{\circ}C$, was found to be exellent when immersed in 1N-H2SO4 solution, and it showed more superior acid resistance with decreasing Cu content and with increasing P. The resistivity of the deposits heat treated became smaller at temperature more than 50$0^{\circ}C$, and it became largerly with increasing P content. Cu 44.1wt% alloy(C bath) showed the most superior non-magnetically stable characteristics after heat treatment. It was superiorly with higher temperature and with decreasing P content.

• Journal of the Korean earth science society
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• v.36 no.1
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• pp.16-26
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• 2015

To investigate the applicability of physical prospecting technique in soft ground assessment, the resistivity monitoring data of 6 months are acquired. The Multichannel Analysis Surface Wave (MASW) has been additionally performed to identify the shear wave velocity and strength distribution of soft ground. Moreover, by using the Cone Penetration Test (CPT) and laboratory tests of drilling samples, a relationship with the physical prospect data is checked and the reliability of the physical prospect data is increased. Through these activities, the behavior patterns of soft soil are identified by long term monitoring, and the significant relationship between the shear wave velocity and laboratory tests has been confirmed, both of which can be useful in the surface wave exploration to evaluate the strength of soft ground. Finally, using the geostatistical method, 3-dimensional soil base distribution images are obtained about the combined physical prospecting data with heterogeneous data. Through the studies, the nature of entire area can be determined by long term resistivity monitoring for the soft ground assessment in wider area. It would be more economic and reliable if additional exploring and drilling samples can be analyzed, which can reinforce the assessment.

• Journal of the Korean Geophysical Society
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• v.5 no.2
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• pp.143-151
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• 2002

Bulku temple in the city of Kyungju, Korea, built in 791 and reconstructed in the 20th century, is the home of seven national treasures including two three-story stone pagodas, Dabotap (height 10.4m, width 7.4m, weight 123.2ton) and Seokgatap (height 10.8m, width 4.4m, weight 82.3 ton). An earlier archaeological investigation shows that stone pagodas have experienced severe weathering process which will threaten their stability. At the base part of Dabotap, an offset of the stone alignment is also observed. For the purpose of the structural safety diagnosis of two pagodas, we introduce the nondestructive geophysical methods. Site characteristics around the pagodas are determined by the measurement of multiple properties such as seismic velocity, resistivity, image of GPR(ground-penetrating radar). Near the pagodas, the occurrence of high resistivity (up to 2200 Ωm) is obvious whereas their outskirts have as low as 200 Ωm. For the velocity of the P wave, the site of Dabotap has the range of 500~800 m/s which is higher than counterpart of Seokgatap with the velocity of 300~500m/s, indicating the solider stability of Dabotap site. Consequently, in addition to GPR images, the foundation boundaries beneath each stone pagodas are revealed. The Dabotap site is in the form of an octagon having 6-m-long side with the depth of ~4m, whereas the Seokgatap site the 9m × 10m rectangle with the depth of 3m. These subsurface structures appear to reflect the original foundations constructed against the stone load of ~8 ton/㎡. At the subsurface beneath the northeast of each pagoda, low seismic velocity as well as low resistivity is prominent. It is interpreted to represent the weak underground condition.

• Advances in materials Research
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• v.5 no.2
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• pp.93-105
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• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.38-38
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• 2009

Wafer thickness of crystalline silicon is an important factor which decides a price of solar cell. PC1D was used to fix a condition that is required to get a high efficiency in a crystalline silicon solar cell using thin wafer($150{\mu}m$). In this simulation, base resistivity and emitter doping concentration were used as variables. As a result of the simulation, $V_{oc}$=0.6338(V), $I_{sc}$=5.565(A), $P_{max}$=2.674(W), FF=0.76 and efficiency 17.516(%) were obtained when emitter doping concentration is $5{\times}10^{20}cm^{-3}$, depth factor is 0.04 and sheet resistance is $79.76{\Omega}/square$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.120-120
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• 2009

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}torr$, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivity of film was $6.5{\times}10^{-4}[{\Omega}-cm]$ and the average transmittance of over 80% was seen in the visible range

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.36-38
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• 2001

A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.198-200
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• 2003

In this paper, electrical characteristics of EP(engineering plastic) studies for the purpose of electrical insulation materials. A base resin of the EP are Polyamide and Polyphthalamide. And filler is Glass Fibre. Electrical characteristics of EP represents volume resistivity, arc resistance and breakdown voltage according to glass fiber contents. We compare before water immersion and after water immersion. As the results of experiments, Polyphthalamide has good characteristics of insulation material rather than Polyamide as an insulator for electrical power system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.336-336
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• 2010

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was $6.5{\times}10^{-4}$[$\Omega$-cm] and the average transmittance of over 80% was seen in the visible range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.490-495
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• 2015

This paper was proposed the theoretical research and optimal design 3,000 V IGBT for using electrical automotive, high speed train and first power conversion. To obtaining 3,000 V breakdown voltage, the design parameters was showed $160{\Omega}{\cdot}cm$ resistivity and $430{\mu}m$ drift length. And to maintain 5 V threshold voltage, we obtained $6.5{\times}10^{13}cm^{-2}$ p-base dose. We confirmed $24{\mu}m$ cell pitch for maintain optimal on state voltage drop and thermal characteristics. This 3,000 V IGBT was replaced to thyristor devices using first power conversion and high speed train, presently.