Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of GZO thin films prepared by oxygen gas flow rate

산소 분압비에 따라 제작된 GZO 박막의 특성

  • Jung, Yu-Sup (Department of Electrical Engineering, Kyungwon University) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
  • 정유섭 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Published : 2010.06.16
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Abstract

Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO($Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various $PO_2$ (oxygen gas content). Base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was $6.5{\times}10^{-4}$[$\Omega$-cm] and the average transmittance of over 80% was seen in the visible range.

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