• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.337-343
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• 2000

Prism plane slip {11$\bar{2}$0}1/3{$\bar{1}$120} location velocity in sapphire ($\alpha$-Al$_2$O$_3$) single crystals was measured by etch-pit method. The dislocation velocities were measured as a function of temperature and stress between $1150^{\circ}C$ and $1400^{\circ}C$ for engineering stresses in the range 140 to 250 MPa. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be 4.2$\pm$0.4 eV. On the other hand, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 4.5$\pm$0.8. Through this experiments, it was reconfirmed that the basal plane in sapphire single crystals has the 3-fold symmetry.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.280-284
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• 2016

본 연구에서는 Density functional theory(DFT) 계산을 이용하여, $MoS_2$의 Mo와 S를 다른 원자로 치환 했을 때 $2H-MoS_2$ monolayer의 basal plane에서 HER활성을 향상시켰다. 특히 Ge와 Rh를 치환한 경우, ${\Delta}G_H$가 각각 0.03eV, 0,07eV로 최적에 가까운 HER활성이 나타났다. 다른 원자의 치환이 Fermi level 근처의 DOS(density of states)를 높여, ${\Delta}G_H$을 0에 가깝게 낮출 수 있음을 확인하였다. 또한 치환되는 원자의 농도, 그리고 strain을 변화시켜 농도와 strain의 증가에 따른 ${\Delta}G_H$ 감소를 발견했다. 이로써 각치환되는 원자마다, 치환 농도와 strain을 함께 변화시켜 ${\Delta}G_H$을 낮출 수 있었다. ${\Delta}G_H$가 0에 가까운(${\pm}{\pm}0.2eV$ 이내) 원자종류, 치환 농도, strain의 여러 조합을 찾았다.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.887-892
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• 1999

The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

• Journal of the Korean Ceramic Society
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• v.13 no.4
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• pp.5-8
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• 1976

Both oriented and non-oriented ferroxplana $Co_{1-x}Zn_xZ(Ba_3Co_{2(1-x)}Zn_{2x} Fe_{24}O_{41})$ with x=0.00, 0.45 were prepared by conventional ceramic method. The magnetostrictions of thus prepared specimens were measured by use of the three terminal capacitor device at room temperature. The magnitude of measured values was approximately five times greater than that of ZnY ferroxplana. The easy-magnetization plane at room temperature of both CoZ and Co0.55 $Zn_{0.45}$Z was their basal plane. The magentostrictions in the basal plane and the other planes showed saturated values at magnetic field intensity of about 2Koe and 4Koe, respectively. The magnetostriction constants $K_1, \; K_2, \;K_3\; and\; K_4$ for CoZ were -2.4, -10.5, -5.9 and -45.2$\times10^{-6}$ , while those for $Co_{0.55}Zn_{0.45}Z$ were +0.1, -1.2, -6.3 and -39.0$\times$10^{-6}, , respectively.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• The korean journal of orthodontics
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• v.41 no.4
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• pp.224-236
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• 2011

Objective: The purpose of this study was to analyze the dental and basal arch forms in patients with normal occlusion using the computed tomography (CT) imaging method. Methods: CT images were taken from 27 normal occlusion subjects (male, 15; female, 12) and these images were reconstructed into three-dimensional models. A 3D-coordinate system was formed by setting the middle of the facial axis (FA) point of the maxillary central incisors as the origin. The morphology of the maxilla and mandibular dental and basal arches were analyzed by sectioning parallel to the maxillary occlusal plane. Results: There was no significant difference between A point and B point and between the maxillary 1st molars in both sides of the maxillary and mandibular basal bone. The dental arch was located more labially than the basal arch in the anterior portion. The bucco-lingual crossover of the dental arch and basal arch was formed at the molar region in the maxilla, and at the premolar region in the mandible. Conclusions: This study will help provide three-dimensional diagnostic information about the relationship between basal and dental arches in patients who have severe dental compensation and inappropriate jaw relationships.

• Applied Microscopy
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• v.36 no.3
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

• Carbon letters
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• v.26
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• pp.81-87
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• 2018

Morphological differences in multi-layered graphene flakes or graphene nanoplatelets prepared by oxidative (rGO-NP, reduced graphene oxide-nanoplatelets) and non-oxidative (GIC-NP, graphite intercalation compound-nanoplatelets) routes were investigated with various analytical methods. Both types of NPs have similar specific surface areas but very different structural differences. Therefore, this study proposes an effective and simple method to identify structural differences in graphene-like allotropes. The adsorptive potential peaks of rGO-NP attained by the density functional theory method were found to be more scattered over the basal and non-basal regions than those of GIC-NP. Raman spectra and high resolution TEM images showed more distinctive crystallographic defects in the rGO-NP than in the GIC-NP. Because the R-ratio values of the edge and basal plane of the sample were maintained and relatively similar in the rGO-NP (0.944 for edge & 1.026 for basal), the discrepancy between those values in the GIC-NP were found to be much greater (0.918 for edge & 0.164 for basal). The electrical conductivity results showed a remarkable gap between the rGO-NP and GIC-NP attributed to their inherent morphological and crystallographic properties.

• Journal of the Korean Society for Heat Treatment
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• v.37 no.2
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• pp.66-72
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• 2024

To investigate the effect of deformation condition on microstructure and texture formation behaviors of AZ91 magnesium alloy with three kinds of initial texure during high-temperature deformation, plane strain compression tests were carried out at high-temperature deformation conditions - temperature of 673 K~723 K, strain rate of 5 × 10^-3s^-1, up to a strain of -1.0. To clarify the texture formation behavior and crystal orientaion distribution, X-ray diffraction and EBSD measurement were conducted on mid-plane section of the specimens after electroltytic polishing. As a result of this study, it is found that the main component and the accumulation of pole density vary depending on initial texture and deformation caondition, and the formation and development basal texture components ({0001} <$10\bar{1}0$>) were observed regardless of the initial texure in all case of specimens.