• Preventive Nutrition and Food Science
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• v.13 no.1
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• pp.28-32
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• 2008

Water vapor sorption by sodium alginate-based films may result in swelling and conformational changes in the molecular structure and affecting the water vapor barrier properties. Sodium alginate film specimens were dried in a vacuum freeze dryer and their moisture content was determined by an air-oven method. The water vapor absorption was determined at two different levels of water activities (0.727 and 0.995) and at three temperatures (10, 20, and $30^{\circ}C$), and kinetics were analyzed using a simple empirical model. Reasonably good straight lines were obtained with plotting of 1/($m-m_0$) vs 1/t. It was found that water vapor absorption kinetics of sodium alginate films were accurately described by a simple empirical model. The rate of water vapor sorption increased with increase in temperature and it showed temperature dependency following the Arrhenius equation. The activation energies varied from 49.18$\sim$149.55 kJ/mol depending on the relative humidity.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.403-410
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• 2001

Acceleration in integration density and speed performance of ULSI circuits require miniaturization of CMOS and interconnections as well as higher current density capabilities for transistors. A leading candidate to substitute Al-alloy is Cu, which has lower resistivity and higher melting point. So we can expect much higher electromigration resistance. In this paper, we are going to explain the major features of EM for MOCVD Cu according to variant conditions. We compared the life time and activation energy of MOCVD Cu with those of I-beam Cu and AA in the same conditions. The electromigration experiments were performed with Cu/Al/TiN multilayer. Experimental results shows that the deposition rate and electromigration characteristics of Cu thin film were improved by the Al interlayer.

• Membrane Journal
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• v.19 no.1
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• pp.19-24
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• 2009

Sol-gel process is relatively simple, easy to use, cheap to install, and results in thin coating layers with superior physical and gas barrier properties. Films coated by the sol-gel process can be used as insulating films or packaging films for foods, chemicals, drugs, and beverages, etc. In this study, alumina sol was synthesized from aluminum isopropoxide and silane coupling agent was added to make coating solutions. In addition, biaxially oriented polypropylene (BOPP) was coated using several alumina sol solutions and their oxygen permeabilities were measured. The experimental results indicate that in the best case, the oxygen permeability of coated film was reduced by 85% compared to that of pure BOPP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.32-32
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• 2009

실리콘 박막 태양전지에서 전면 투명전도막(TCO)은 태양전지의 전기, 광학적 특성을 결정하는 중요한 기능을 한다. ZnO:Al TCO는 기존에 사용되던 $SnO_2:F$와는 비정질 실리콘(a-Si:H) 박막 태양전지의 윈도우 층으로 사용되는 p a-SiC:H와의 일함수(work function) 차이로 인해 접촉전위(contact barrier)를 형성하게 되며 이로 인해 태양전지의 충진율(fill factor)이 $SnO_2:F$에 비해 감소하는 단점을 보인다. 본 연구에서는 ZnO:Al/p a-SiC:H 계면의 접촉전위 발생원인 및 태양전지 충진율 감소현상에 관한 정확한 원인규명을 위해 다양한 특성을 갖는 버퍼층을 삽입하여 계면특성 및 태양전지의 동작특성을 분석하고자 한다.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1908-1910
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• 2001

본 논문은 마이크로머시닝 기술을 이용하여 lift-off 공정으로 패턴닝 한 후 TMAH (Tetramethylammonium Hydroxide) 용액으로 $5{\sim}100{\mu}m$ 두께의 실리콘 다이어프램을 제작하였다. Pt/Ti 박막을 HF 전해질의 mask 물질로 사용하여 HF 용액 내에서 전기화학적 방법으로 정전압을 인가, 다이어프램 영역에 다공질 실리콘을 성장시켜 관통하였다. 140$^{\circ}C$의 질소 분위기에서 $10{\sim}15{\mu}m$두께의 LDPE(Low Density Poly Ethylene) 필름을 물리적으로 다이어프램 영역에 코팅하고 $K_2CO_3$ 용액내에서 ${CO_3}^{2-}$ 이온의 barrier에 의한 전류의 감소를 전기화학적인 분석방법에 의하여 측정하였다. 일정 전압하에서 이온 농도에 기인하는 다공질 실리콘과 LDPE 표면에서 Barrier의 두께에 따른 저항의 증가를 전극으로 감지하여 농도-전류의 특성을 측정하고 이것을 기준으로 하여 미지농도의 $K_2CO_3$ 용액내의 ${CO_3}^{2-}$ 이온 농도를 측정하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.48-49
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• 2008

본 실험에서는 대향 타겟식 스퍼터링 (face target sputtering, FTS) 장비를 사용하여 플렉서블 디스플레이용 poly ethylene naphthalate (PEN) 플라스틱 기판 위에 보호층으로 사용된 $ZrO_2$ 박막의 특성들에 대해 연구하였다. FTS에 의해 3 시간동안 증착된 $ZrO_2$ 박막의 기판 온도는 $69^{\circ}C$ 로 낮은 증착 온도를 나타내었으며, 이는 유리전이온도가 낮은 PEN 과 같은 플라스틱 기판위에 박막 증착시 적용하기에 적합하다. 제작된 $ZrO_2$ 박막에서 기판 중심으로부터 거리의 함수로 측정된 박막의 두께 차이는 약 4.5%로 매우 균일한 두께를 갖는 것으로 측정되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.118-118
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• 1999

CVD방법에 의한 TiN 박막 형성에 있어서 ICP-CVD 방법이 대두되고 있다. 이것은 precursor에 대한 radical 형성, 식각된 패턴에서 양 벽의 self-shadowing 효과, 낮은 tress등으로 dense 한 박막을 얻을 수 있기 때문이다. TiN 박막은 Si 기판의 온도를 상온에서 50$0^{\circ}C$까지 유지하면서 TEMAT의 유량을 5-20sccm으로 변화시키면서 증착하였다. 증착 후 TiN 박막의 결정화에 따른 열처리는 Ar과 N2-가스분위기에서 in-situ로 증착하였다. 증착 후 TiN 박막증착 조건수립에 따른 플라즈마 특성진단은 전자의 온도와 밀도, 평균 전자밀도, 이온 에너지 분포, radical 분포, negative 이온분포 등으로 측정하였다. 플라즈마 변수에 따른 TiN 박막의 결정성과 상 변화는 XRD로 분석하였고, 조성비 및 TiN 박막의 원소화학적 상태, 결합에너지, 각 상에 따른 결합 에너지 천이정도, 초기 형성과정 및 반응기구 등은 RBS와 XPS로 조사하였다. TiN 박막의 표면상태, morphology 거칠기, TiN/Si(100)구조에서 계면상태 등은 SEM, AFM, 그리고 HRTEM으로 분석하였다. TiN 구조 박막의 비저항, carrier concentration 그리고 mobility 측정은 박막의 표면이 균일하고 bls-홀이 없는 것으로 하여 4-point probe 방법으로 측정하였다. 이들 분석으로부터 ICP-CVD 방법에 의하여 형성된 TiN 박막이 초고집적 반도체 소자의 contact barrier layer로서의 적용 가능성을 평가하였다.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.173-181
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• 2005

A new two dimensional (2-D) model for the potential distribution of fully depleted short-channel ion-implanted silicon MESFET's has been presented in this paper. The solution of the 2-D Poisson's equation has been considered as the superposition of the solutions of 1-D Poisson's equation in the lateral direction and the 2-D homogeneous Laplace equation with suitable boundary conditions. The minimum bottom potential at the interface of the depletion region due to the metal-semiconductor junction at the Schottky gate and depletion region due to the substrate-channel junction has been used to investigate the drain-induced barrier lowering (DIBL) and its effects on the threshold voltage of the device. Numerical results have been presented for the potential distribution and threshold voltage for different parameters such as the channel length, drain-source voltage, and implanted-dose and silicon film thickness.