• Proceedings of the Korean Society of Veterinary Clinics Conference
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• 2006.11a
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• pp.64-64
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• 2006

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Biomolecules & Therapeutics
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• v.23 no.6
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• pp.525-530
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• 2015

Ceramide is the most abundant lipid in the epidermis and plays a critical role in maintaining epidermal barrier function. Overall ceramide content in keratinocyte increases in parallel with differentiation, which is initiated by supplementation of calcium and/or vitamin C. However, the role of metabolic enzymes responsible for ceramide generation in response to vitamin C is still unclear. Here, we investigated whether vitamin C alters epidermal ceramide content by regulating the expression and/or activity of its metabolic enzymes. When human keratinocytes were grown in 1.2 mM calcium with vitamin C ($50{\mu}g/ml$) for 11 days, bulk ceramide content significantly increased in conjunction with terminal differentiation of keratinocytes as compared to vehicle controls (1.2 mM calcium alone). Synthesis of the ceramide fractions was enhanced by increased de novo ceramide synthesis pathway via serine palmitoyltransferase and ceramide synthase activations. Moreover, sphingosine-1-phosphate (S1P) hydrolysis pathway by action of S1P phosphatase was also stimulated by vitamin C supplementation, contributing, in part, to enhanced ceramide production. However, activity of sphingomyelinase, a hydrolase enzyme that converts sphingomyelin to ceramide, remained unaltered. Taken together, we demonstrate that vitamin C stimulates ceramide production in keratinocytes by modulating ceramide metabolicrelated enzymes, and as a result, could improve overall epidermal barrier function.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.2
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• pp.325-330
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel structure and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model. Resultly, DIBL has been greatly changed for channel structure and doping concentration.

• Korean Journal of Food Science and Technology
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• v.49 no.5
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• pp.519-523
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• 2017

We investigated the applications of functional materials through the examination of a variety of physiological activities of Ipomoea aquatica extract. I. aquatica extract showed low cytotoxicity against murine melanoma B16F10 cells. At concentrations that exerted little or no cytotoxicity to the cells, I. aquatica extract showed high DPPH radical scavenging activity ($ID_{50}$, $7.84{\mu}g/mL$), inhibited tyrosinase activity ($ID_{50}$, $106.56{\mu}g/mL$), and decreased melanin content ($ID_{50}$, $41.75{\mu}g/mL$). The treatment of B16F10 cells with I. aquatica extract suppressed the protein expression of tyrosinase in a dose-dependent manner. These findings suggested that I. aquatica extract inhibited melanin synthesis in murine melanoma B16F10 cells through the suppression of intracellular tyrosinase expression, as well as the simultaneous direct inhibition of tyrosinase activity. Additionally, I. aquatica extract promoted the expression of involucrin, which is related to skin barrier protection. These results indicate that I. aquatica extract may be an appropriate material for the improvement of skin barrier function.

• Food Science and Preservation
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• v.20 no.5
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• pp.597-601
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• 2013

In this study, we searched for bioactive compounds from natural resources with a supercritical extract. We selected the extracts of Chrysanthemum zawadskii, Lufa cylindrica, Paeonia lactiflora, Gardenia jasminoides and Scutellaria baicalensis, as natural materials, and evaluated the effects of their skin barrier function. We found that these extracts increased the transactivation activity of the PPAR-responsive element (PPRE) and the anti-oxidation with different priorities, respectively. In addition, these extracts promoted the expression of proteins related to cornified envelope (CE) formation, such as involucrin. From these results, we suggest that natural materials from supercritical extracts will be pertinent candidates for the improvement of the epidermal permeability barrier function.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.93-99
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• 2011

We investigated how the surface roughness of electrode affects the charge injection at the pentacene/Au interface. After depositing Au film on the Si substrate by sputtering, we annealed the sample to control the Au surface roughness. Pentacene and Au top electrode were subsequently deposited to complete the sample. The nucleation density of pentacene was slightly higher on the rougher Au electrode, but surface morphologies of thick pentacene films were similar on both the as-prepared and the roughened Au electrodes. The current-voltage curves obtained from the Au/pentacene/Au structure measured as a function of temperature indicated that the interface barrier was higher for the rougher Au bottom-electrode. We propose that the higher barrier was caused by the lower work function of rougher electrode surface and the higher trap density at the interface.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.1
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• pp.145-150
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• 2013

This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.