• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1447-1450
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• 2007

The electrical properties of organic lightemitting devices (OLEDs) with wide-bandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped $Alq_3$ EML did not vary significantly with the current density, that of the OLEDs with a BCP-doped $Alq_3$ EML changed dramatically.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.380-383
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• 2002

본 논문에서는 20㎓~50㎓ 대역에서 2 차원 PBG(Photonic-Bandgap) 구조의 투과 특성을 RCWA(Rigorous coupled-wave analysis)방법에 의한 Transfer matrix로 해석하였다. Square lattice의 PBG 구조에 대하여 TE 편파에서 유전율의 변화와 결함(defect)의 유무에 대한 투과 특성을 고찰하였다.

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.437-447
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• 2018

Visible-light-driven wide bandgap semiconductor photocatalysts were commonly developed via doping or coupling with another narrow bandgap metal oxide. However, these approaches required extra processing. The aim of study was to evaluate the photocatalytic performance of narrow bandgap $WO_x$ nanoparticles. A mixture of $WO_2$ and $WO_3$ nanoparticles were synthesized using solution precipitation technique. The photodegradation of RhB by these nanoparticles more effective in UV light than in visible light. In antibacterial susceptibility assay, $WO_x$ nanoparticles demonstrated good antibacterial against Gram-positive bacteria. The cell wall of bacterial was the main determinant in antibacterial effect other than $W^{4+}/W^{6+}$ ions and ROS.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.53-56
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• 2018

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

• Journal of information and communication convergence engineering
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• 제14권3호
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• pp.184-190
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• 2016

We present experimental demonstrations of electromagnetic bandgap (EBG) structures for the wideband suppression of radiated emissions from a power bus in high-speed printed circuit boards (PCBs). In most of the PCB designs, a parallel plate waveguide (PPW) structure is employed for a power bus. This structure significantly produces the wideband-radiated emissions resulting from parallel plate modes. To suppress the parallel plate modes in the wideband frequency range, the power buses based on the electromagnetic bandgap structure with a defected ground structure (DGS) are presented. DGSs are applied to a metal plane that is connected to a rectangular EBG patch by using a via structure. The use of the DGS increases the characteristic impedance value of a unit cell, thereby substantially improving the suppression bandwidth of the radiated emissions. It is experimentally demonstrated that the DGS-EBG structure significantly mitigates the radiated emissions over the frequency range of 0.5 GHz to 2 GHz as compared to the PPW.

• Transactions on Electrical and Electronic Materials
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• 제13권2호
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• pp.64-68
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• 2012

We have successfully demonstrated a bandgap alteration of transparent zinc oxide (ZnO) thin film with Mg dopant by using sol-gel spin coating technique. By increasing the dopant from 0 to 30 atomic percent (at.%), a decrement value in the cutoff is observed, where the absorption edge shifts continuously to the shorter wavelength side, towards 300 nm. This resulted in a significant bandgap increment from 3.28 to 3.57 eV. However, the transmittance of the thin film at 350-800 nm gradually downgraded, from 93 to 80 % which is most probably due to the grain size that becomes bigger, and it also affected the electrical properties. The decrement from 45 to 0.05 mA at +10 V was observed in the I-V characteristics, concluding the significant relationship; where higher optical bandgap materials will exhibit lower conductivity. These findings may be useful in optoelectronics devices.

• Advances in nano research
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• 제12권2호
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• pp.213-221
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• 2022

Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.

• 한국정보기술학회 영문논문지
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• 제8권2호
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• pp.59-67
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• 2018

The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

• Journal of information and communication convergence engineering
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• 제15권4호
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• pp.237-243
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• 2017

This paper presents an analysis of the electromagnetic interference of a heterogeneous power bus where electromagnetic bandgap (EBG) cells are irregularly arranged. To mitigate electrical-noise coupling between high-speed circuits, the EBG structure is placed between parallel plate waveguide (PPW)-based power buses on which the noise source and victim circuits are mounted. We examine a noise suppression characteristic of the heterogeneous power bus in terms of scattering parameters. The characteristics of the dispersion and scattering parameters are compared in the sensitivity analysis of the EBG structure. Electric field distributions at significant frequencies are thoroughly examined using electromagnetic simulation based on a finite element method (FEM). The noise suppression characteristics of the heterogeneous power bus are demonstrated experimentally. The heterogeneous power bus achieves significant reduction of electrical-noise coupling compared to the homogeneous power buses that are adopted in conventional high-speed circuit design. In addition, the measurements show good agreement with the FEM simulation results.

• 항공우주기술
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• 제3권1호
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• pp.251-256
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• 2004

적외선 소자로부터 생성되는 신호와의 비교에 의한 잡음 특성의 향상, 즉 좋은 영상을 얻기 위해서 적외선 영상신호 취득회로(ROIC)에서는 안정적인 기준 전압원이 필요하다. 본 논문은 극저온인 77K에서 동작하는 적외선 영상신호 취득회로(readout integrated circuit)를 위한 밴드갭 기준회로에 대해서 제안하고 있다. 기본에 발표된 대부분의 밴드갭 기준회로는 실온에서 동작하는 것이며, 액체질소 온도 77K에서 동작하는 적외선 영상 ROIC에는 적합하지 않다. 본 논문에서는 극저온에서 동작하는 밴드갭 기준회로 설계를 위하여, 온도변화에 따른 사용되는 소자들의 parameter에 대한 특성을 살펴본 후, 이러한 특성들을 고려하여 밴드갭 기준 회로를 제안하였으며 이것은 그 실용 가능성을 입증하고 있다.