• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.210-211
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• 2009

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with US PCS($T_x$:1850MHz~1910MHz, $R_x$:1930MHz~1990MHz) bandwidth which is used for wireless systems. Also, we designed and fabricated 3.8*3.8*1.8mm size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of $k_{eff}^2$. Using this resonators, designed 3*2Type $T_x$ filter and 3*4Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with $210{\mu}m$ in width and 18mm in length Stripline type. Inductor, which is used for matching component, is designed with width of $75{\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57dB ~ -1.73dB in insertion loss, -56dB in attenuation at 1850MHz~1910MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23dB in insertion loss, -58dB in attenuation at 1930MHz~1990MHz of $R_x$ band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.388-396
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• 2010

In this study, we propose characteristics improvement methods according to via hole plating method for FBAR Duplexer with bandwidth($T_x4: 1850 MHz ~ 1910 MHz, $R_x$:1930 MHz ~ 1990 MHz) which is used for wireless systems. Also, we designed and fabricated $3.8{\times}3.8{\times}1.8mm$ size microminiature FBAR Duplexer based on this proposal. First of all, in this study, we fabricated pentagon shape resonators by different size to make filter combination, and their quality factor(Q) are 687 with 6.6% of ${k_{eff}}^2$. Using this resonators, we designed $3{\times}2$ Type $T_x$ filter and $3{\times}4$ Type $R_x$ filter. The transmission line, which works as phase shifter, is designed with 210 ${\mu}m$ in width and 18 mm in length Stripline type. Inductor, which is used for matching component, is designed with width of 75 ${\mu}m$, a technically achievable minimum width. And adopted plating method of filling via hole with conductive epoxy for improved grounding and thermal conductivity. Using these configuration with all of the matching component values, we found Duplexer characteristics of -1.57 dB ~ -1.73 dB in insertion loss, -56 dB in attenuation at 1850 MHz ~ 1910 MHz of $T_x$ band. Also, found -2.71 dB ~ -3.23 dB in insertion loss, -58 dB in attenuation at 1930 MHz ~ 1990 MHz of $R_x$ band.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Journal of electromagnetic engineering and science
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• v.6 no.4
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• pp.235-243
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• 2006

In this paper, the fractal shape is applied to microstrip band pass filters and integrated on a high-resistivity Si substrate to solve conventional $2^{nd}$ harmonic problem. Conventional microstrip coupled line filters are popular in RF front ends, because they can be easily fabricated and integrated with other RF components. However, they typically have large second harmonics that can cause unwanted interference in interested frequency bands. Without any additional filters, the proposed Koch shape filters have suppressed the $2^{nd}$ harmonics by about -40 dB, so they can be used in systems such as direct conversion receiver with stringent harmonic suppression requirements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.273-273
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• 2013

Recently, Point-of-care (POC) testing microdevices enable to do the patient monitoring, drug screening, pathogen detection in the outside of hospital. Immunochromatographic strip (ICS) is one of the diagnostic technologies which are widely applied to POC detection. Relatively low cost, simplicity to use, easy interpretations of the diagnostic results and high stability under any circumstances are representative advantages of POC diagnosis. It would provide colorimetric results more conveniently, if the genetic analysis microsystem incorporates the ICS as a detector part. In this work, we develop a reverse transcriptase-polymerase chain reaction (RT-PCR) microfluidic device integrated with a ROSGENE strip for colorimetric influenza H1N1 virus detection. The integrated RT-PCR- ROSGENE device is consist of four functional units which are a pneumatic micropump for sample loading, 2 ${\mu}L$ volume RT-PCR chamber for target gene amplification, a resistance temperature detector (RTD) electrode for temperature control, and a ROSGENE strip for target gene detection. The device was fabricated by combining four layers: First wafer is for RTD microfabrication, the second wafer is for PCR chamber at the bottom and micropump channel on the top, the third is the monolithic PDMS, and the fourth is the manifold for micropump operation. The RT-PCR was performed with subtype specific forward and reverse primers which were labeled with Texas-red, serving as a fluorescent hapten. A biotin-dUTP was used to insert biotin moieties in the PCR amplicons, during the RT-PCR. The RT-PCR amplicons were loaded in the sample application area, and they were conjugated with Au NP-labeled hapten-antibody. The test band embedded with streptavidins captures the biotin labeled amplicons and we can see violet colorimetric signals if the target gene was amplified with the control line. The off-chip RT-PCR amplicons of the influenza H1N1 virus were analyzed with a ROSGENE strip in comparison with an agarose gel electrophoresis. The intensities of test line was proportional to the template quantity and the detection sensitivity of the strip was better than that of the agarose gel. The test band of the ROSGENE strip could be observed with only 10 copies of a RNA template by the naked eyes. For the on-chip RT-PCR-ROSGENE experiments, a RT-PCR cocktail was injected into the chamber from the inlet reservoir to the waste outlet by the micro-pump actuation. After filling without bubbles inside the chamber, a RT-PCR thermal cycling was executed for 2 hours with all the microvalves closed to isolate the PCR chamber. After thermal cycling, the RT-PCR product was delivered to the attached ROSGENE strip through the outlet reservoir. After dropping 40 ${\mu}L$ of an eluant buffer at the end of the strip, the violet test line was detected as a H1N1 virus indicator, while the negative experiment only revealed a control line and while the positive experiment a control and a test line was appeared.

• Proceedings of the Korea Concrete Institute Conference
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• 1999.04a
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• pp.481-486
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• 1999

According to results of this research Fly-ash Cement permanent-form production was found to be possible by fly-ash mortal. The compress strength 350kg/$\textrm{cm}^2$, banding strength 120kg/$\textrm{cm}^2$ were possible material separting and bleeding by excessive W/C rate was decreased permanent-form made by polymer solved high price of polymer by fly-ash. Model material was made by result of first research. There were no minute-crack on beam form and out surface of form was very smooth, So filling degree seemed desirable length of form after steaming curing was maintained as expected. with these results production of form seemed possible. In the banding load test, fly-ash showed increase of maxim load 12% than RC. in the case of minute-crack, comparing with RC, fly-ash showed no crack at connect. at the first stage under continuing loading size of crack increased. These phenomena seemed to be based on contribution of stress of inner bars in permanent-form. in the test of defection, fly-ash shower about 10% beam load increase than RC. in the case of beam defection, RC showed sudden decrease of tolerance at maxim load and total breaking, but permanent-form showed breaking of bending maintaining defection with contribution of steel stress ($\Phi$6 wire-mash). There phenomenic seemed to be attributed to increase of surface and steel tolerance of form. According to construction explacemaion, it was guessed that each panel was constructed by conner-steels in form edge. so cohesiveness was small. on these bases. keeping width of horizontal band 30cm, form-panel of 20mm width was found to be of use. Permanent-form was found to be efficient in compressibleness, defection, safety and use of Fly-ash mortal.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.185-190
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• 1995

Rare earth-aluminum intermetallic compounds $RAI_{2}$ (R ; Lu, Ce, Gd) are prepared by the arc-melt method and the magnetic properties and electronic structures are investigated by magnetic susceptiptibiliy measurements using SQUID magnetometer. The magnetic suceptibiliyof $LuAl_{2}$ is weakly temperature dependent and shows a Pauli susceptibility of $10.1{\times}10^{-5}$ emu/mol, which means 3.2 states/eV/formula unit. On the other hand, the susceptibility data of $CeAl_{2}$ and $GdAl_{2}$ show a Curie-Weiss behavior for paramagnets. The magnetization data at low temperatures confirm that $CeAl_{2}$ undergoes an antiferromagnetic phase transition near 4 K whereas $GdAl_{2}$ a ferromagnetic transition at 170 K. The distinctive magnetic behaviors of $RAI_{2}$ originate from the different 4f band filling.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.