• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• Current Optics and Photonics
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• v.2 no.1
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• pp.47-52
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• 2018

We systematically investigated the negative-refraction effect for both TE and TM polarizations in annular photonic crystals. Since two polarization waves are excited in different bands, they result in different refractive angles, and so polarization beam splitters can be made of annular photonic crystals. It was found that, in comparison to normal square-lattice air-hole photonic crystals, annular photonic crystals have a much wider common frequency band between TE-1 and TM-2, which is quite beneficial to finding the overlap between the negative-refraction regions belonging to TE-1 and TM-2 respectively. Further analyses of equifrequency surfaces and the electric-field distribution of annular photonic crystals with different parameters have not only demonstrated how the filling factor of annular cells affects the formation of the common negative-refraction region between TE-1 and TM-2, but also revealed some ways to improve the performance of a polarization beam splitter based on the negative-refraction effect in an annular photonic crystal.

• Carbon letters
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• v.16 no.3
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• pp.198-202
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• 2015

Carbon-supported Pt catalyst systems containing defect adsorption sites on the anode of direct methanol fuel cells were investigated, to elucidate the mechanisms of H₂ dissociation and carbon monoxide (CO) poisoning. Density functional theory calculations were carried out to determine the effect of defect sites located neighboring to or distant from the Pt catalyst on H₂ and CO adsorption properties, based on electronic properties such as adsorption energy and electronic band gap. Interestingly, the presence of neighboring defect sites led to a reduction of H₂ dissociation and CO poisoning due to atomic Pt filling the defect sites. At distant sites, H₂ dissociation was active on Pt, but CO filled the defect sites to form carbon π-π bonds, thus enhancing the oxidation of the carbon surface. It should be noted that defect sites can cause CO poisoning, thereby deactivating the anode gradually.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.30-34
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• 2003

For an inhomogeneous superconductor, we reveal a relation of an observed superconducting gap, $\Delta$$_{obs}$ and the intrinsic true gap, $\Delta$$_{i}$, $\Delta$$_{obs}$(equation omitted) where band filling, 0＜$\rho$<$\leq$1. $\Delta$$_{obs}$ is the effect of measurement when 0＜$\rho$＜1. The true gap is observed only when $\rho$=1. Parring symmetry analyzed by a coherence-peak shape of density of states, observed in B $i_2$S $r_2$CaC $u_2$ $O_{8}$＋$\chi$ superconductors, is s- wave.X> $O_{8}$＋$\chi$ superconductors, is s- wave. wave.

• Applied Chemistry for Engineering
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• v.32 no.2
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• pp.214-218
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• 2021

We investigated the optimal stacked structure from the perspective of process architecture (PA) through emission spectrum analysis according to the wavelength of quantum dot (QD)-organic light-emitting diodes (OLED). We confirmed that the blue-light leakage through the QD can be minimized by increasing the QD filling density above a critical value in the red QD (R-QD) layer. In addition, when the thickness of red-color filter (R-CF) at the upper part of the R-QD increased to more than 3 ㎛, the leakage of blue light through the R-CF was effectively blocked, and a very sharp emission spectrum in the red wavelength band could be obtained. According to these outstanding results, we expect that the development of QD-OLED displays with very excellent color gamut can be possibly realized.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.2
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• pp.60-60
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• 2018

It has been known that XZ CMi is a near-contact binary composed of a hotter and more massive main-sequence primary star close to its Roche-lobe and a Roche-lobe filling giant/subgiant secondary star. There still exist, however, many discordant matters among the previous investigators: diverse mass ratios and temperatures ranging from 0.38 to 0.83 and from 7,000 K to 8,876 K, respectively. In order to make a contribution to the two confusions we conducted spectroscopic and photometric observations. A total of 34 high-resolution spectra were obtained during 4 nights from 2010 and 2018 with the Bohyunsan Optical Echelle Spectrograph (BOES) at the Bohyunsan Optical Astronomy Observatory (BOAO). In parallel, BVRI multi-band photometric observations were carried out 5 nights in 2010 at Sobaeksan Optical Astronomy Observatory (SOAO). In this presentation, we present physical parameters of XZ CMi through the simultaneous analyses of new double-lined radial velocity curves and new light curves. We will also briefly discuss the evolutionary status of the system.

• Journal of the korean academy of Pediatric Dentistry
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• v.36 no.1
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• pp.91-95
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• 2009

The use of stainless steel crowns are indicated for restoration of primary or permanent molars with proximal dental caries, extensive dental caries, or previous pulp treatment with increased danger of tooth fracture. Stainless steel crowns were introduced by Humphrey in 1950. For their improved durability, longevity, and success rate, they have been strongly considered for restoring extensive and multi-surfaced dental caries of molars in pediatric dentistry. However, they also have shortcomings, such as possibility of pulpal exposure or damaging proximal surface of adjacent teeth. In addition, when oversized stainless steel crowns are used, eruption of the adjacent permanent teeth may be disturbed by their prominent margin. As a means to compensate the shortcomings of stainless steel crowns, use of orthodontics bands may be considered. It is an alternative restoration method, where an orthodontic band is placed on a tooth first and cavity is restored with filling material, such as composite resin, glass ionomer, or amalgam. The use of an orthodontic band is indicated for molar restoration with cervical dental caries, extensive dental caries, enamel hypoplasia, or previous pulp treatment. Because it requires shorter chair time compared to stainless steel crown, its application is very useful for children with poor behavior. However, restoration using an orthodontic band requires good oral hygiene after its application. This case report illustrates the conservative restoration of primary molars and permanent molars with extensive dental caries using orthodontic bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1031-1041
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• 2009

A small microstrip monopole antenna for macro-micro frequency tuning over multiple bands is presented. The meander-shape antenna is fabricated on a conventional printed circuit board(FR-4, $\varepsilon_r=4.4$ and tan $\delta=0.02$). The antenna operates over WiBro(2.3~2.4 GHz) and WLAN a/b(2.4~2.5 GHz/5.15~5.35 GHz) service bands with an essentially constant antenna gain within each service band. Two diodes, a PIN diode and a varactor, are embedded into the antenna for frequency reconfiguration. The PIN diode is used for frequency switching(macro-tuning) between 2 GHz and 5 GHz bands while the varactor is used for frequency tuning(micro-tuning) within the service bands, 2.3~2.5 GHz and 5.15~5.35 GHz. Unwanted resonances between the two frequency bands(2 GHz and 5 GHz) are suppressed by filling up the gaps between the meander lines. The antenna gain is essentially constant and higher than 2 dBi within each service band. The measured performance of the proposed antenna system suggests the macro-micro frequency tuning techniques be useful in reconfigurable wireless communication systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.