• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.326-329
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• 2003

In this paper, we designed and implemented a high power amplifier(HPA) to achieve the high Power Added Efficiency(PAE) over 40% at the 90W output power for the ISM-band(fo=2.45GHz). HPA presented in this paper has 3-stage drive amplifier and 1-stage final amplifier. In the final amplifier, we utilized balanced amplifier configuration with GaAs FET and each of two amplifiers has the push-pull configuration to increase PAE. From the measurement results, we obtained PAE of 42.95% at the 90.57W output power.

• ETRI Journal
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• v.31 no.5
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• pp.598-600
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• 2009

A highly efficient and compactly integrated balanced power amplifier (PA) for W-CDMA handset applications is presented. To overcome the size limit of a typical balanced PA, a bulky input divider is integrated into a PA MMIC, and a complex output network is replaced with simple lumped-element networks. For efficiency improvement at the low output power level, one of the two amplifiers in parallel is deactivated and the other is partially operated with corresponding load impedance optimization. The implemented PA shows excellent average current consumption of 34.5 mA in urban and 56.3 mA in suburban environments, while exhibiting very good load-insensitivity under condition of VSWR=4:1.

• Journal of Electrical Engineering and Technology
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• v.8 no.3
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• pp.610-612
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• 2013

A novel balanced distributed amplifier (DA) was proposed using novel impedance transforming MEMS baluns. The impedance transforming MEMS balun is matched to $50{\Omega}$ at one input port and $25{\Omega}$ at two output ports. It is based on the electric field mode-change method, thus it is strongly independent of frequency and very compact. The novel balanced DA consists of two $25{\Omega}$-matched DAs and these are combined by $50{\Omega}$-to-$25{\Omega}$ baluns. Theoretically, it has two times wider bandwidth and power capability than the conventional DA. So as to verify the proposed concept, we designed and fabricated a conventional DA and the proposed one using 0.15-${\mu}m$ GaAs pHEMT technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.1
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• pp.68-75
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• 2012

The load-insensitivity of the balanced power amplifier(PA) for W-CDMA handset applications is analyzed. The load impedances of the two parallel amplifiers in the balanced PA depending on the output load mismatch are mathematically calculated and with the result, the phase of reflection coefficient at which the linear output power is severely degraded is investigated. From the analysis, we proposed that the linearity of the balanced PA at the phase can be improved by properly increasing the transistor size and thus, multiple balanced PA's with different transistor size are designed and simulated. The simulation result showed that the balanced PA with larger transistor size has improved linear output power under VSWR=4:1.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.4
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• pp.323-331
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• 1997

In this paper, the high efficiency balanced amplifier is presented as high efficiency power amplifier. This amplifier is basically composed of two FETs, an input power divider, output power combiner, input matching circuits, output matching circuits, second harmonic interconnection circuit and lowpass filter. The second harmonic interconnection circuit is composed of second harmonic frequency bandpass filter and transmission line. This circuit is inserted between the output terminals of the two FEF's output matching circuit, there is a second harmonic standing wave generated between two FET outputs. The electric wall termination is equivalent to the short circuit termination. As a result, the FET output termination condition needed to attain high efficiency is realized. Experimental high efficiency balanced amplifier is constructed to determine its practically attainable efficiency. The input VSWR is 1.27, and the output VSWR is 1.18. Power added efficiency of 75% is attained at 1.75 GHz band about 3W to balanced amplifier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.18-24
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• 2007

We report broadband cascode amplifiers of a single-ended and a balanced amplifier for the millimeter-wave applications. The amplifiers were fabricated using 0.1 ${\mu}m\;{\Gamma}-gate$ PHEMT technology on GaAs substrate. The single-ended cascode amplifier was designed and fabricated by using shunt peaking technology. The fabricated single-ended cascode amplifier shows 3 dB bandwidth of 37 GHz($18.5{\sim}55.5$ GHz) and the maximum $S_{21}$ gain of 9.38 dB. The balanced cascode amplifier using tandem couplers achieves 3 dB bandwidth and the maximum $S_{21}$ gain of 44.5 GHz($21{\sim}65.5$ GHz) and 10.4 dB at 60 GHz, respectively. The 3 dB bandwidth of the balanced cascode amplifier shows 20% lager than the single-ended cascode amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.1
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• pp.41-46
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• 2003

In this paper, We designed the millimeter wave power amplifier employing PBG. The amplifier has the bandwidth from 24.6 GHz to 24.75 GHz. For improvement of the Linearity and the PAE of the amplifier, PBG was designed to suppress the 2nd harmonic of the Amplifer. The Proposed PBG have smaller area and better rejection characteristic than conventional PBG structure. The fabricated PBG shows 35 dB or more of rejection characteristic at the 2nd harmonic band of the amplifier. The amplifier has balanced structure having lange coupler which means better input$.$output return loss and higher output power.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.5
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• pp.7-14
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• 1977

Conventionally, a TIVT has been used for high power amplification in the microwave frequency range. However, an ultra-high-power amplifier in the 2GHz range has successfully been designed and fabricated employing high power transistors developed recently and available commercially. In the design of the amplifier, a balanced-pair configuration is adopted in order to obtain very high microwave power, and a good impedance matching is achieved by making use of microstripline techniques. For the RF power divider as well as combiner, an approach of stripline directional coupler isadopted because of its easiness in fabrication. The coupler so designed and fabricated indicates a satisfactory performance as a quadrature hybrie coupler. Measurements on the amplifier developed for an immediate commercial application also exhibit excellent overall performance characteristics RF power output, 14 watts, gain 14dB, frequency bandwidth, 160MHz, effciency 40%.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.329-332
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• 2000

In this paper, we made 5W 2stage power amplifier for IMT-2000 repeater. We designed this amplifier by harmonic balanced simulation using nonlinear model to minimize distortion. After simulation, we acquired 47㏈m 1㏈ compression point at 2110 ~ 2170MHz single tone input. In addition, the ACPR of this amplifier was good. The test result was 47㏈m 1㏈ compression point, 42.6㏈ gain, -36.16㏈c ACPR at 2.5MHz, -44.34㏈c ACPR at 5MHz and -51.67㏈c ACPR at 7.5MHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.6A
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• pp.677-682
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• 2004

In this paper, A novel spatial power combiner with wideband printed dipole antennas and balanced amplifier is proposed. The wideband spatial power combiner is proposed to improve power capability and bandwidth by using balanced amplifier and wideband printed dipole antenna, respectively, The proposed 4${\times}$1 spatial power combiner with those components has the characteristics that the 3-dB bandwidth is 1.02 GHz (17 ％), and the effective isotropic power gain (EIPG) is 24.04 dB at 6 GHz. Also, power combining efficiency is 68.69％.