• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.99-103
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• 1999

Compressive creep of dense polycrystalline $BaTiO_3$, with average grain sizes of 19.3-52.4$\mu\textrm{m}$, has been investigated at 1100-$1300^{\circ}C$ in air or under controlled atmospheres $(10^2-10^5Pa \;O_2)$. Some cavity growth occurred during deformation because of non-steady-state damage accumulation in the form of cavitation. Comparison of the creep data of polycrystalline BaTiO3 with existing diffusivity and creep data for perovskite oxides suggested that deformation of polycrystalline $BaTiO_3$ was controlled by the extrinsic lattice diffusion of barium or titanium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.132-135
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.190-192
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• 1994

Microwave dielectric properties of $0.15(Ba_xSr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-0.7TiO_2$ ($x=0.9{\sim}1.0[mol.]$, y=6[m/0]) and $0.15(Ba_{0.95}Sr_{0.05})O-0.15(Sm_{2(1-y)}Nd_{2y})O_3-zTiO_2$(y=6[m/o], $z=0.66{\sim}0.7[mol.]$) ceramics were investigated with the contents of BaO and $TiO_2$. In the specimen with contents of BaO (0.975[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency have good values of 76.52, 3001(at 3[GHz]), +0.71[ppm/$^{\circ}C$], respectively. In the specimen with contents of $TiO_2$(0.69[mol.]), dielectric constant, quality factor and temperature coefficient of resonant frequency showed the maximum values of 80.89, 3057(at 3[GHz]), +26.12[ppm/$^{\circ}C$], respectively.

• Journal of the Korean Ceramic Society
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• v.12 no.2
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• pp.10-14
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• 1975

Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.252-252
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• 2007

$Al_2O_3-TiO_2$(AT)ceramics shows great promise as a dielectric material for millimeter-wave use. The sintering temperature of AT ceramics was approximately $1450^{\circ}C$ and decreased to $900^{\circ}C$ with the addition of BaCu(B2O5) (BCB) ceramic powder. The presence, of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of $Q{\times}f\;=\;16,200\;GHz$, ${\varepsilon}_r\;=\;9$ and ${\tau}_f\;=\;-4\;ppm/^{\circ}C$ were obtained for the 20.0 mol% BCB-added AT ceramics sintered at $900^{\circ}C$ for 2 h.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1411-1413
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• 2001

The $(Ba_{0.5}Sr_{0.5})(Nb_{0.5}Ti_{0.5})O_3$ [BSNT] ceramics were prepared by conventional mixed oxide method. The structural properties of the BSNT ceramics with sintering temperature were investigated by XRD, SEM, EDS. Increasing the sintering temperature, diffraction intensity of the BST(110) peak was increased. The average grain size of BSNT ceramics were increased with sintering temperature. In the case of BSNT ceramics sintered at 1550$^{\circ}C$, the grain was uniform and the pore was not existed. Increasing the sintering temperature from 1400$^{\circ}C$ to 1500$^{\circ}C$, the amount of Nb and Sr were decreased. The density of BSNT ceramics sintered at 1550$^{\circ}C$ was $1.125g/cm^2$.

• Journal of the Korean Ceramic Society
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• v.39 no.7
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• pp.628-634
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• 2002

Formation rate of tetragonal BaTiO$_3$powder by hydrothermal synthesis and its dielectric property were studied. Submicron tetragonal BaTiO$_3$ powders were prepared hydrothermally, using Ba(OH)$_2$.8$H_2O$, TiO$_2$(anatase) and KOH as starting chemicals. Characterization via X-ray diffractometry, field emission scanning electron microscopy confirmed that increasing calcination temperatures(from 1100 to 130$0^{\circ}C$) promotes the formation of tetragonal BaTiO$_3$. Tetragonal BaTiO$_3$ ceramics, obtained by calcining at 1200 for 3 h after hydrothermal synthesis at 200 for 168 h, exhibited submicron size of 0.5 ~ 0.7 ${\mu}{\textrm}{m}$ and high relative permittivity.

• Advances in materials Research
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• v.1 no.2
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.5
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• pp.516-521
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• 2022

We investigated the microstructure, crystal structure, dielectric, and elecromechanical strain properties of lead-free BaTiO₃ (BT)-modified (Bi_1/2Na_1/2)TiO₃-SrTiO₃ (BNT-ST) piezoelectric ceramics. Samples were prepared by a conventional ceramic processing route. Temperature dependent dielectric properties confirmed that a phase transition from a nonergodic relaxor to an ergodic relaxor was induced when the BT concentration reached 1.5 mol%, interestingly, where the average grain size reached a maximum value of 4.5 ㎛. At the same time, enhanced electromechanical strain (S_max/E_max = 600 pm/V) was obtained. It is suggested that the induced ferroelectric-relaxor phase transition by the BT modification is responsible for the enhancement of electromechanical strain in 1.5 mol% BT-modified BNT-ST ceramics.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1012-1220
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• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.