• Journal of the Korean Ceramic Society
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• v.24 no.5
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• pp.484-490
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• 1987

Diffusion coupling experiment was done to study expansion of body and soild reaction in BaCO3-TiO2 system. Specimen of BaCO3 and TiO2 was formed with Pt-mark's method. Each specimen was fired at interval of 25℃ from 900℃ to 1000℃ for 2hrs. After that, specimen was fixed with resin and polished. Product layers of specimen were observed with SEM and EDS. The result were following; 1. Diffusion component is Ba2+, which diffuse toward TiO2. 2. Large crack between layer of BaCO3 and Ba2TiO4 was generated because of difference of thermal expansion coefficient. 3. Ba2TiO4 is formed to TiO2 body by the reaction of BaTiO3 and BaO and its structure is very porous. 4. BaTiO3 changes immediately to Ba2TiO4 by the reaction of BaO. But BaTiO3 which formed by the reaction of TiO2 and Ba2TiO4 exsists as layer because the diffusion distance of Ba2+ is far.

• The Journal of Natural Sciences
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• v.8 no.1
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• pp.61-69
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• 1995

It is hard to synthesize pure $BaTiO_3$ from $BaCO_3$ and $TiO_2$ in solid reaction for the activity of BaO and secondary phase. For this reason, the wet chemical techniques have been studied. Starting material which was used in these methods were expensive and the properties of powder which was synthesized in same defined. So, some process have been studying again to improve soild reaction method. This study which was one of those was to defin the forming mechanism of $Ba_2TiO_4$ and to control some condition of $Ba_2TiO_4$. The synthesis temperature of $BaTiO_3$ in solid reaction was near $1120^{\circ}C$. The quantity and forming temperature of $Ba_2TiO_4$ could be controlled by atmosphere heat treatment. $Ba_2TiO_4$ was related to expansion in Ba-rich region of $BaTiO_3$. $BaTiO_2O_5$ and $BaTiO_3O_7$ was reason to expand in Ti-rich region. The dielectrics of $CeAIO_3$ which was synthesized and sintered in reduction atmosphere and $BaTiO_3$ system were affected by $CeO_2$ which was formed for the decomposition of $CeAIO_3$ heat treatment in air.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1005-1011
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• 1994

The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.194-196
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• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.25-25
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• 2003

BaTi₄O/sub 9/계 세라믹스에 저온 소결 조제로 첨가된 lithium-borosilicate계 유리 프리트의 첨가에 따른 상분해 현상을 XRD, TEM에 의하여 분석하였다. 유리 프리트의 첨가가 없는 BaTi₄O/sub 9/계 세라믹스는 첨가량과 열처리 온도에 관계없이 BaTi₄O/sub 9/상과 소량의 TiO₂상만이 관찰되었으나 저온 소결 조제로 사용된 유리 프리트의 첨가량이 증가할수록 BaTi₄O/sub 9/계 세라믹스는 BaTi₄O/sub 9/상 보다 Ti-rich상인 Ba₂Ti/sub 9/O/sub 20/상, BaTi/sub 5/O/sub 11/상, 또는 BaTi/sub 5/O/sub 11/상과 Ba₄Ti₃O/sub 30/상으로 공존하며 분해되는 것을 관찰하였다. 공존하며 분해되는 것을 관찰하였다. 유리 프리트가 10 wt% 첨가시 600℃ 까지는 BaTi₄O/sub 9/상과 TiO₂상으로 존재하였으나 700℃ 전후에서 BaTi/sub 5/O/sub 11/상과 Ba₄Ti/sub 13/O/sub 30/상으로 분해되기 시작하여 875℃에서는 BaTi₄O/sub 9/상이 완전히 분해되어 BaTi/sub 5/O/sub 11/상이 주상으로 Ba₄Ti/sub 13/O/sub 30/상은 이차상으로 존재하는 것을 확인하였다. 또한, 열처리 온도가 증가할수록 Ba₄Ti/sub 13/O/sub 30/상이 상대적으로 감소하고 있는 것도 관찰할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• Journal of the Korean Chemical Society
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• v.38 no.4
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• pp.309-318
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• 1994

The stable defect structure and the single phase region of La$_2O_3$-modified BaTi$O_3$ have been studied by X-ray diffractometer and scanning electron microscope. The stable defect structure of La$_2O_3$-modified BaTi$O_3$ has been identified as [($Ba^x_{Ba})_{1-2x}(La{\cdot}_{Ba})_{2x}][Ti^x_{Ti})_{1-x/2}(V""_{Ti})_{x/2}]O_3$ which consists of La$^{3+}$ ion substitution for Ba$^{3+}$ ion in the lattice structure and the formation of Ti vacancies for the charge compensation. When 3 mol% of La$_2O_3{\cdot}3/2TiO_3$ was added to BaTi$O_3$, the unit cell structure was transformed from tetragonal to cubic and the solubility limit was about 14 mol%. When La$_2O_3{\cdot}3/2TiO_2$ was added above this solubility limit, the second phase, La$_4Ba_2Ti_5O_{18}$, was formed. In the La$_2O_3$-modified BaTi$O_3$, it was found by the liquid phase sintering process that the sinterability was decreased by excess BaO but increased by excess Ti$O_2$.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1130-1140
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• 1998

Thin films of $Bi_4Ti_3O_{12}\;nBaTiO_3(n=1&2)$ were prepared using sols erived Ba-Bi-Ti complex alkoxides. The sols were spin-cast onto $Pt/Ti/SiO_2/Si$ substrates and followed by pyrolysis for 1 hr at $620^{\circ}C,\;700^{\circ}C\;and\;750^{\circ}C$ In the thin films a pyrochlore phase seemed to be formed at a lower temperature and then tran-formed to the layered perovskite phase as the heating temperature increased. In the thin films pyrolyzed at formed to the layered perovskte phase as the heating temperature increased. In the films pyrolyzed at $750^{\circ}C$ the amount of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ reached to 94% while $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ was 77% in composition. This result shows that the formation of the layered pervoskite phase becomes difficult as the amount of complexing $BaTiO_3$ increases. The microstructures and the electrical properties of the thin films were gen-erally improved with the incease of the heating temperature. However the presence of the pyrochlore phase could not be removed effectively. Our study showed that the electrical properties of $Bi_4Ti_3O_{12}{\cdot}BaTiO_3$ were pronouncedly improved with complexing with BaTiO3 when compared to those of $Bi_4Ti_3O_{12}$ while the presence of the pyrochlore phase was detrimental to the those of $Bi_4Ti_3O_{12}{\cdot}2BaTiO_3$.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.819-829
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• 1997

The microwave dielectric materials of the BaO-Nd$_2$O$_3$-TiO$_2$and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system were synthesized by conventional ceramic processing and sintered 1220 to 140$0^{\circ}C$ for 2 hours respectively. Their crystallization and dielectric properties were examined. In the BaO-Nd$_2$O$_3$-TiO$_2$ and BaO-(Sm, Nd)$_2$O$_3$-TiO$_2$system. Nd$_2$Ti$_2$O$_{7}$ and (Sm, Nd)$_2$Ti$_2$O$_{7}$ were observed as a second phase respectively. The maximum relative dielectric constant were 79,99 for the BaO-Nd$_2$O$_3$-TiO$_2$system and 105.07 for the BaO-(Sm,Nd)$_2$O$_3$-TiO$_2$system and their Q-value were over 2000 at 3GHz.GHz.