• Title/Summary/Keyword: BLT1

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Leukotriene B4 receptors contribute to house dust mite-induced eosinophilic airway inflammation via TH2 cytokine production

  • Park, Donghwan;Kwak, Dong-Wook;Kim, Jae-Hong
    • BMB Reports
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    • v.54 no.3
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    • pp.182-187
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    • 2021
  • Leukotriene B4 (LTB4) is a lipid mediator of inflammation that is generated from arachidonic acid via the 5-lipoxygenase pathway. Previous studies have reported that the receptors of LTB4, BLT1, and BLT2 play mediatory roles in the allergic airway inflammation induced by ovalbumin (OVA). However, considering that house dust mites (HDMs) are the most prevalent allergen and well-known risk factor for asthmatic allergies, we are interested in elucidating the contributory roles of BLT1/2 in HDM-induced allergic airway inflammation. Our aim in this study was to investigate whether BLT1/2 play any roles in HDM-induced allergic airway inflammation. In this study, we observed that the levels of ligands for BLT1/2 [LTB4 and 12(S)-HETE (12(S)-hydroxyeicosatetraenoic acid)] were significantly increased in bronchoalveolar lavage fluid (BALF) after HDM challenge. Blockade of BLT1 or BLT2 as well as of 5-lipoxygenase (5-LO) or 12-lipoxygenase (12-LO) markedly suppressed the production of TH2 cytokines (IL-4, IL-5, and IL-13) and alleviated lung inflammation and mucus secretion in an HDM-induced eosinophilic airway-inflammation mouse model. Together, these results indicate that the 5-/12-LO-BLT1/2 cascade plays a role in HDM-induced airway inflammation by mediating the production of TH2 cytokines. Our findings suggest that BLT1/2 may be a potential therapeutic target for patients with HDM-induced allergic asthma.

Molecular Dissection of the Interaction between hBLT2 and the G Protein Alpha Subunits

  • Vukoti, Krishna Moorthy;Lee, Won-Kyu;Kim, Ho-Jun;Kim, Ick-Young;Yang, Eun-Gyeong;Lee, Cheol-Ju;Yu, Yeon-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.28 no.6
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    • pp.1005-1009
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    • 2007
  • Leukotriene B4 (LTB4) is a potent chemoattractant for leukocytes and considered to be an inflammatory mediator. Human BLT2 (hBLT2) is a low-affinity G-protein coupled receptor for LTB4 and mediates pertussis toxin-sensitive chemotactic cell movement. Here, we dissected the interaction between hBLT2 and G-protein alpha subunits using GST fusion proteins containing intracellular regions of hBLT2 and various Gα protein including Gα i1, Gα i2, Gα i3, Gα s1, Gα o1, and Gα z. Among the tested Gα subunits, Gα i3 showed the highest binding to the third intracellular loop region of hBLT2 with a dissociation constant (KD) of 5.0 × 10?6 M. These results suggest that Gα i3 has the highest affinity to hBLT2, and the third intracellular loop region of hBLT2 is the major component for the interaction with Gα i3.

Leukotriene B4 Regulates Proliferation and Differentiation of Cultured Rat Myoblasts via the BLT1 Pathway

  • Sun, Ru;Ba, Xueqing;Cui, Lingling;Xue, Yan;Zeng, Xianlu
    • Molecules and Cells
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    • v.27 no.4
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    • pp.403-408
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    • 2009
  • Skeletal muscle regeneration is a highly orchestrated process initiated by activation of adult muscle satellite cells. Upon muscle injury, the inflammatory process is always accompanied by muscle regeneration. Leukotriene $B_4$ is one of the essential inflammatory mediators. We isolated and cultured primary satellite cells. RT-PCR showed that myoblasts expressed mRNA for $LTB_4$ receptors BLT1 and BLT2, and $LTB_4$ promoted myoblast proliferation and fusion. Quantitative real-time PCR and immunoblotting showed that $LTB_4$ treatment expedited the expression process of differentiation markers MyoD and M-cadherin. U-75302, a specific BLT1 inhibitor, but not LY2552833, a specific BLT2 inhibitor, blocked proliferation and differentiation of myoblasts induced by $LTB_4$, which implies the involvement of the BLT1 pathway. Overall, the data suggest that $LTB_4$ contributes to muscle regeneration by accelerating proliferation and differentiation of satellite cells.

Analysis of Coupling Effects in Transmission Lines Using the BLT Equation and Numerical Methods (BLT 방정식과 수치해석 기법을 이용한 전송 선로의 커플링 효과 분석)

  • Du, Jin-Kyoung;Ahn, Jae-Woon;Hwang, Sun-Mook;Yook, Jong-Gwan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.1
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    • pp.99-103
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    • 2012
  • The electromagnetic topology and the BLT equation has been used as useful techniques to analyze coupling effects of huge devices. But in the case of systems including complex parts, applying the BLT equation can be difficult to manifest the complex parts with analytic solutions. To resolve this problem, a numerical method can be used to parts of the whole system in advance. In this paper, a microstrip line filter is analyzed using the BLT equation combined with numerical solutions. Consequently, achieved graphs from the BLT equation show good agreements with graphs obtained using a numerical method only.

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Prepared by MOD (MOD 법으로 제작된 Bi3.25La0.75Ti3O12 박막의 강유전 특성)

  • 김경태;김창일;권지운;심일운
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.486-491
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    • 2002
  • We have fabricated $Bi_{3.25}La_{0.75}Ti_3O_12$ (BLT) thin films on the Pt/Ti/$SiO_2$/Si substrates using a metalorganic decomposition (MOD) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of BLT films examined by x-ray diffraction (XRD). From XRD analysis. BLT thin films show polycrystalline structure. The layered-perovskite phase was obtained by spin-on films at above $600^{\circ}C$ for 1h. Scanning electron microscopy (SEM) showed uniform surface composed of rodlike grains. The grain size of BLT films increased with increasing annealing temperature. The BLT film annealed at $650^{\circ}C$ was measured to have a dielectric constant of 279, dielectric loss of 1.85(%), remanent polarization of $25.66\mu C/\textrm{cm}^2$, and coercive field of 84.75 kV/cm. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^9$ bipolar cycling at 5 V and 100 kHz.

Anti-inflammatory action of ethanolic extract of Ramulus mori on the BLT2-linked cascade

  • Park, Geun-Soo;Kim, Jeong-Keun;Kim, Jae-Hong
    • BMB Reports
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    • v.49 no.4
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    • pp.232-237
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    • 2016
  • Mulberry tree twigs (Ramulus mori) contain large amounts of oxyresveratrols and have traditionally been used as herbal medicines because of their anti-inflammatory properties. However, the signaling mechanism by which R. mori exerts its anti-inflammatory action remains to be elucidated. In this study, we observed that R. mori ethanol extracts (RME) exerted an inhibitory effect on the lipopolysaccharide (LPS)-induced production of the pro-inflammatory cytokine interleukin-6 (IL-6) in Raw264.7 macrophage cells. Additionally, RME inhibited IL-6 production by blocking the leukotriene B4 receptor-2 (BLT2)-dependent-NADPH oxidase 1 (NOX1)-reactive oxygen species (ROS) cascade, leading to anti-inflammatory activity. Finally, RME suppressed the production of the BLT2 ligands LTB4 and 12(S)-HETE by inhibiting the p38 kinase-cytosolic phospholipase A2-5-/12-lipoxygenase cascade in LPS-stimulated Raw264.7 cells. Overall, our results suggest that RME inhibits the 'BLT2 ligand-BLT2'-linked autocrine inflammatory axis, and that this BLT2-linked cascade is one of the targets of the anti-inflammatory action of R. mori.

Characterization of BLT/insulator/Si structure using $ZrO_2$ and $CeO_2$ insulator ($ZrO_2$$CeO_2$ 절연체를 이용한 BLT/절연체/Si 구조의 특성)

  • Lee, Jung-Mi;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.186-189
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    • 2003
  • The MFIS capacitors were fabricated using a metalorganic decomposition method. Thin layers of $ZrO_2$ and $CeO_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the $ZrO_2$ and $CeO_2$ layer. AES show no interdiffusion and the formation of amorphous $SiO_2$ layer is suppressed by using the $ZrO_2$ and $CeO_2$ film as buffer layer between the BLT film and Si substrate. The width of the memory window in the C-V curves for the $BLT/ZrO_2/Si$ and $BLT/CeO_2/Si$ structure is 2.94 V and 1.3V, respectively. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

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Ar Addition Effects in $Cl_2$ Plasma on Etching Properties for BLT Thin Film ($Cl_2$ 플라즈마를 이용한 BLT 박막 식각 특성에 대한 Ar 첨가효과)

  • Kim, Dong-Pyo;Kim, Kyoung-Tae;Kim, Chang-Il;Lee, Cheol-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.174-177
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    • 2003
  • $Cl_2$ 플라즈마를 이용한 BLT 박막의 식각에서 Ar 가스의 첨가에 따른 식각 속도, 선택비 및 식각 형상의 변화에 대하여 관찰하였다. BLT 박막의 식각 속도는 100% Ar 플라즈마에서 100 % $Cl_2$ 플라즈마에서의 식각 속도보다 약 1.5배정도 빨랐으며, 80% Ar/20% $Cl_2$ 조건에서 $503{\AA}/min$ 최대 식각의 최대 시각 속도를 얻었다. RF 전력과 직류 바이어스 전압을 증가함에 따라 식각 속도는 증가하였으며, $Ar/Cl_2$ 플라즈마의 식각 속도가 $Cl_2$ 플라즈마의 식각 속도 보다 높았다. 식각 공정 변수의 변화에 의한 플라즈마 변수가 BLT 식각 속도에 미치는 영향을 관찰하기 위하여 LP(Lanmuir porbe)와 OES(optical emission spectroscopy)분석을 수행하였다. Ar 첨가량이 증감함에 따라 LP 분석에서 전자의 온도는 증가하였으나 전자밀도는 감소하였다. 이는 Ar의 이온화 준위가 Cl 보다 높기 때문에 이온화 윷이 낮아지기 때문으로 판단된다, 또한, OES 분석에서 Ar 첨가량이 증가함에 따라 Cl 원자의 부피 밀도는 감소하였다. Ar 첨가에 의한 BLT 박막의 식각 속도의 변화와 LP 및 OES 분석을 고려하면, BLT 박막은 화학적 식각의 도움을 받는 무리적 식각에 의하여 식각됨을 확인하였다,

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Dry Etching Characteristics of BLT Thin Film (BLT 박막의 건식 식각 특성에 관한 연구)

  • Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.309-311
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    • 2003
  • The effects of etch parameters on dry etching of BLT thin films were investigated with ICP etch system in $Cl_2$/Ar and $BCl_2/Cl_2$/Ar gas. The etch rate and etch selectivity of BLT films were examined as a function of gas concentration, ICP power, bias power, and pressure. The maximum etch rates of 191.1 nm/min was obtained at the mixed etch condition of $BCl_3(20%)/Cl_2$/Ar, 700 W ICP RF power, 12 mTorr pressure and 400 W substrate RF power. As ICP power and rf power increased, the etch rate of BLT increased. As pressure increased, the etch rate of BLT decreased. The changes of radicals in both $Cl_2$/Ar and $BCl_3/Cl_2$/Ar plasma were measured with using optical emission spectroscopy (OES).

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Dielectric properties of $Bi_{3.25}La_{0.75}Ti_3O_{12}$ thin films with Bi contents (Bi 첨가량에 따른 BLT 박막의 유전특성)

  • 김경태;김창일;강동희;심일운
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.371-374
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    • 2002
  • Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

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