• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.6
• /
• pp.272-278
• /
• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.195-198
• /
• 1999

A Bi$_4$Ti$_3$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM. The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG analysis. The BIT thin film deposited on Pt/Ta/SiO$_2$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100㎸/cm is 4.71$mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250㎸/cm, the remanent polarization (Pr) and the coercive field (Ec) are 5.92$mutextrm{A}$/$\textrm{cm}^2$ and 86.3㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Korean Journal of Materials Research
• /
• v.14 no.6
• /
• pp.402-406
• /
• 2004

$WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.4
• /
• pp.7-14
• /
• 2000

A Bi$_{4}$Ti$_{3}$O$_{12}$ (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40$0^{\circ}C$ and $650^{\circ}C$, respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO$_{2}$/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2$\AA$, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 $mutextrm{A}$/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 $\mu$C/$\textrm{cm}^2$ and 86.3 ㎸/cm, respectively. After applying 10$^{9}$ square pulses of $\pm$5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 $\mu$C/$\textrm{cm}^2$ of initial state to 3.95 $\mu$C/$\textrm{cm}^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.575-580
• /
• 2007

A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.373-378
• /
• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Electrical & Electronic Materials
• /
• v.3 no.3
• /
• pp.187-194
• /
• 1990

광자기 메모리용 재료인 비정질 TbFe 박막을 대상으로 열자기 기록시 박막에 분포하는 온도와 이때 만들어지는 bit의 크기간에 상호관련성을 조사하였다. 레이저 조사에 의해 가열된 박막의 온도분포는 유한요소법을 이용한 열전달 해석에 의해 계산하였다. 레이저 가열종료 직전 박막 면에 분포하는 온도 contour로 부터 bit 크기를 예측하였다. 여기서 bit 크기는 온도 상승에 따라 보자력이 약화되어 외부자계와 박막반자장의 합력이 역자구를 만들어 준다고 가정하여 이 경계가 되는 온도(Tcrit)로 이루어지는 등온선의 크기로부터 정하였다. 열자기 기록 실험으로부터 기록 bit의 크기(Dmeas.)을 측정하여 레이저조사조건별로 예측한 bit크기(Dpred.)와 비교하였다. 특히, 레이저 pulse시간 변화에 따른 여러온도의 등온선 contour 직경변화를 조사하여 실측한 bit크기와 비교 검토함으로써 bit형성에 미치는 온도분포의 영향을 조사하였다. 이 결과 레이저 pulse시간이 길어지거나 레이저 power가 상대적으로 작을때 실측한 bit크기가 예측된 bit크기보다 커지는 것으로 나타났으며 이는 Tcrit 온도구배가 완만해질수록 bit경계가 되는 온도가 낮아지는 것으로 해석된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.135-136
• /
• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.4
• /
• pp.173-178
• /
• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.479-480
• /
• 2005

The Analog data is impossible to perfect reconstruct original data at a hologram data storage because of noise such as cross talk. So it is necessary that data can be stored by digital signal unavoidably. Therefore this work deals with experiments from this point of view through writing & reading of digital data. We stored 256bit digital data at one point on As-Ge-Se-S chalcogenide thin film and we reconstruct original data of 100% through the specified algorithm such as the histogram equalization, the interactive correction, etc. This result shows that the data is able to reconstruct under relative low diffraction efficiency. As the result, we expect the possibility of chalcogenide thin film for HDDS as the analysis of the effective resolution refer to reconstruction rate and diffraction efficiency.