• Journal of The Korean Society of Integrative Medicine
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• v.10 no.4
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• pp.71-81
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• 2022

Purpose : This study aimed to present evidence by analyzing the characteristics and effectiveness of group art therapy interventions through an examination of domestic studies on group art therapy for older people with dementia. Methods : The database used DBpia, Riss, and Google Scholar, and the research period was from 2016 to November 2021. For the selected studies, the level of evidence was analyzed, bias evaluation was performed, and patient, intervention, comparison, and outcome were analyzed. For the evaluation of bias, the risk of bias assessment tool for non-randomized study (RoBANS) and Cochrane's risk of bias (RoB) were used. Results : As for the level of evidence of the included studies, level I consisted of five studies, and levels II and III each had one article. As a result of the bias evaluation of five studies through RoB, a "low risk of bias" was found for incomplete result data, selective result reporting, and others, except for four unclear evaluation areas. The "low risk of bias" ratio was 0~25 % in the evaluation of bias in two studies through RoBANS. For the evaluation tool, cognitive evaluation tool was used the most while mini-mental state examination-Korea was used the most frequently. For the intervention method, the most frequently used was group art therapy that employed recall in three studies, while collage, Korean painting, use of paper media, and procedural memory were used in each of the other studies. Each intervention was found to be significantly effective overall. Conclusion : This study provided clinical evidence by systematically reporting research on group art therapy for older people with dementia. In the future, it is necessary to check the effect of group art therapy on various areas other than cognition for older people with dementia. Moreover, the study should be conducted with the risk of bias sufficiently taken into consideration.

• Korean Journal of Culture and Social Issue
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• v.9 no.2
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• pp.101-126
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• 2003

The purpose of present study is to investigate what is the most important factor among personality, social relation perception, and cultural influence on North Korean Defectors' self-enhancement bias, and how their self-enhancement bias influences on their psychological adaptation in South Korea. To implement this, we compared the self-enhancement bias of South Korean undergraduates and North Korean Defector undergraduates, and social desirability, too. However, there was no significant result. Based on this outcome, we focused on 121 North Korean Defectors' self-enhancement bias mechanism. We found that personality and social relation perception factors influenced significantly on their self- enhancement bias and furthermore their self-enhancement bias affected on their psychological adaptation. In addition to this, we identified sex difference at this mechanism. That is, women showed the same pattern with the existing findings in the study of self-enhancement bias mechanism, but men showed somewhat different pattern.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.33-39
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• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.215.2-215.2
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• 2015

We fabricated dual active layer (DAL) thin film transistors (TFTs) with indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film layers using solution process. The ITZO and IGZO layer were used as the front and back channel, respectively. In order to investigate the bias stress stability of ITZO SAL (single active layer) and ITZO/IGZO DAL TFT, a gate bias stress of 10 V was applied for 1500 s under the dark condition. The SAL TFT composed of ITZO layer shows a poor positive bias stability of ${\delta}VTH$ of 13.7 V, whereas ${\delta}VTH$ of ITZO/IGZO DAL TFT was very small as 2.6 V. In order to find out the evidence of improved bias stress stability, we calculated the total trap density NT near the channel/gate insulator interface. The calculated NT of DAL and SAL TFT were $4.59{\times}10^{11}$ and $2.03{\times}10^{11}cm^{-2}$, respectively. The reason for improved bias stress stability is due to the reduction of defect sites such as pin-hole and pores in the active layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.10
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• pp.1483-1488
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• 2012

This paper analyzed the precision and accuracy of the altitude-aided GNSS using the altitude information from digital map. The precision of altitude-aided GNSS is analysed using the theoretically derived DOP. It is confirmed that the precision of altitude-aided GNSS is superior to the general 3D positioning method. It is also shown that the DOP of altitude-aided GNSS is independent of altitude bias error while the accuracy was influenced by the altitude bias error. Furthermore, it is shown that, since the altitude bias error influenced differently to each pseudorange measurement, the effect of the altitude bias error is more serious than clock bias error which does not influence position error at all. The results are evaluated by the simulation using the commercial RF simulator and GPS receiver. It confirmed that altitude-aided GNSS could improve not only precision but also accuracy if the altitude bias error are small. These results are expected to be easily applied for the performance improvement to the land and maritime applications.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.36 no.11
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• pp.1126-1131
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• 2008

This paper applies the Orbital Geometry-based Bias Estimation Algorithm to the magnetometer measurement data of KOMPSAT-1 and 2 and analyzes the induced magnetic field bias caused by the solar panels and electronics boxes in spacecraft bus. This paper reveals that the estimation and correction of the induced magnetic field bias copes with the aging process of magnetometer and makes it possible to carry on the satellite mission by extending its lifetime.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.8
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• pp.752-759
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• 2008

In this paper, we propose a high accurate geo-location system based on a single base station, where its location is obtained by Time-of-Arrival(ToA) and Direction-of-Arrival(DoA) of the radio signal. For estimating accurate ToA and DoA information, a MUltiple SIgnal Classification(MUSIC) is adopted. However, the estimation of ToA and DoA using MUSIC algorithm is a time-consuming process. The position tracking bias is occurred by the time delay caused by the estimation process. In order to mitigate the bias error, we propose the estimation method of the position tracking bias and compensate the location error produced by the time delay using the position tracking bias mitigation. For accurate self-localization of mobile robot, the Unscented Kalman Filter(UKF) with position tracking bias is applied. The simulation results show the efficiency and accuracy of the proposed geo-location system and the enhanced performance when the Unscented Kalman Filter is adopted for mobile robot application.

• Journal of information and communication convergence engineering
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• v.15 no.2
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• pp.112-116
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• 2017

In this work, we demonstrated a low noise and high linearity low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with novel active bias circuit for LTE applications. The device technology used in this work relies on a process involving a $0.25-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT). The LNA MMIC with a novel active bias circuit has a small signal gain of $19.7{\pm}1.5dB$ and output third order intercept point (OIP3) of 38-39 dBm in the frequency range 1.75-2.65 GHz. The noise figure (NF) is less than 0.58 dB over the full bandwidth. Compared with the characteristics of the LNA MMIC without using the novel active bias circuit, the OIP3 is improved about 2-3 dBm. The small signal gain and NF showed no significant change after using the active bias circuit. The novel active bias circuit indeed improves the linearity performance of the LNA MMIC without degradation.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.43-46
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• 2012

In this paper, high efficiency power amplifier is implemented with high gain amplifier. Two-stage amplifier using adaptive bias control circuit improve efficiency at low input power. Fixed bias circuit and adaptive bias circuit both have about 76 % efficiency at maximum power level. However amplifier using an adaptive bias control circuit has 70 % at 6 dBm input power level when the amplifier using fixed bias circuit has 50%. The proposed power amplifier using the adaptive bias control circuit can have high efficiency at lower power level.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.