• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.230-238
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• 2017

We have proposed an InGaAs-based gate-all-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current ($I_{on}$) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner source-channel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on $I_{on}$, the off-state current ($I_{off}$), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the $In_{0.8}Ga_{0.2}As$ source-side channel region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.18-18
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• 2009

최근 다양하게 연구되고 있는 무분극(nonpolar) 갈륨질화물(GaN) 소재는 자발분극(spontaneous polarization) 및 압전분극(piezoelectric polarization) 등이 발생하지 않아 높은 내부양자효율의 확보가 가능하며, 이러한 장점을 바탕으로 고효율 특성을 갖는 발광다이오드(light-emitting diode) 및 고속 전자소자 등으로의 적용을 위한 연구가 활발히 수행 중 이다. 하지만, 무분극 GaN LED의 구현 시, GaN 박막의 비등방성 성장으로 인한 박막의 막질 저하와 함께 표면에 혼재하는 Ga층과 N층에서 기인되는 절연층의 생성으로 인한 오믹전극 형성의 어려움이 대두되고 있다. 따라서, 고효율의 무분극 GaN LED 구현을 위해서는 무분극 GaN층의 질소층 제거를 위한 표면처리 공정과 더불어 금속/무분극 GaN층 간 발생되는 쇼트키 장벽층의 높이(Schottky barrier height)를 제어하는 연구가 선행되어야 한다. 본 논문에서는 무분극 GaN LED 적용을 위한 n-형 전극물질 및 오믹조건 구현을 위한 금속/무분극 GaN층간 SBH의 제어방법에 대한 연구를 수행하였다.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.4
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• pp.259-265
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• 2016

This paper presents a study on the use of pulsed phase thermography in the measurement of thermal barrier coating thickness with a numerical simulation. A multilayer heat transfer model was ussed to analyze the surface temperature response acquired from one-sided pulsed thermal imaging. The test sample comprised four layers: the metal substrate, bond coat, thermally grown oxide and the top coat. The finite element software, ANSYS, was used to model and predict the temperature distribution in the test sample under an imposed heat flux on the exterior of the TBC. The phase image was computed with the use of the software MATLAB and Thermofit Pro using a Fourier transform. The relationship between the coating thickness and the corresponding phase angle was then established with the coating thickness being expressed as a function of the phase angle. The method is successfully applied to measure the coating thickness that varied from 0.25 mm to 1.5 mm.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.147-147
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• 2015

The multilayer structure of the organic light emitting diode has merits of improving interfacial characteristics and helping carriers inject into emission layer and transport easier. There are many reports to control hole injection from anode electrode by using transition metal oxide as an anode buffer layer, such as V2O5, MoO3, NiO, and Fe3O4. In this study, we apply thin films of LiF which is usually inserted as a thin buffer layer between electron transport layer(ETL) and cathode, as an anode buffer layer to reduce the hole injection barrier height from ITO. The thickness of LiF as an anode buffer layer is tested from 0 nm to 1.0 nm. As shown in the figure 1 and 2, the luminous efficiency versus current density is improved by LiF anode buffer layer, and the threshold voltage is reduced when LiF buffer layer is increased up to 0.6 nm then the device does not work when LiF thickness is close to 1.0 nm As a result, we can confirm that the thin layer of LiF, about 0.6 nm, as an anode buffer reduces the hole injection barrier height from ITO, and this results the improved luminous efficiency. This study shows that LiF can be used as an anode buffer layer for improved hole injection as well as cathode buffer layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.129-132
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• 2000

The PDP(Plasma Display Panel) barrier rib material on the glass substrate was patterned for fabrication of the PDP cell using Nd:YAG laser(1064 nm) which can generate the second(532 nm) and forth(266 nm) harmonic wave by HGM(harmonic generation modules). At a scan speed of 20 ${\mu}m/s$ with the second harmonic wave(532 nm) of Nd:YAG laser, the etching threshold laser fluence of the PDP material was 6.5 $mJ/cm^2$ and a sample(thickness = 180 ${\mu}m$) on the glass substrate was removed clearly at a laser fluence of 19.5 $mJ/cm^2$. In order to increase the throughput of the fabrication we divided a single-beam into multi-beams by using a metal mask between the sample and the focusing lens. As a result, 10 lines of PDP cell were formed by one laser beam scanning at a scan speed of 200 ${\mu}m/s$ and a laser fluence of 2.86 $J/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.662-662
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• 2013

Over the last several decades, innovative light-harvesting devices have evolved to achieve high efficiency in solar energy transfer. Research on the mechanisms for plasmon resonance is very desirable to overcome the conventional efficiency limits of photovoltaics. The influence of localized surface plasmon resonance on hot electron flow at a metal-semiconductor interface was observed with a Schottky diode composed of a thin silver layer on $TiO_2$. The photocurrent is generated by absorption of photons when electrons have enough energy to travel over the Schottky barrier and into the titanium oxide conduction band. The correlation between the hot electrons and the surface plasmon is confirmed by matching the range of peaks between the incident photons to current conversion efficiency (IPCE, flux of collected electrons per flux of incident photons) and UV-Vis spectra. The photocurrent measured on Ag/$TiO_2$ exhibited surface plasmon peaks; whereas, in contrast to the Au/$TiO_2$, a continuous Au thin film doesn't exhibit surface plasmon peaks. We modified the thickness and morphology of a continuous Ag layer by electron beam evaporation deposition and heating under gas conditions and found that the morphological change and thickness of the Ag film are key factors in controlling the peak position of light absorption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.235-236
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• 2006

The contact resistance and grain boundary potential barrier of ceramic $BaTiO_3$ PTCR were investigated. The electroless plated Ni, evaporated Al, and Ag paste were chosen as electrode materials of PTCR device for comparison analysis before and after heat treatment. The contact resistance of electrode were measured by electrometer (dc), digital multimeter (dc), and LCR meter (ac). In the case of Al electroded samples, the heat treatment and protective oxide layer had high resistance and effect on the stability of PTCR effect against contact resistance degradation, but the Ag-paste had comparably high contact resistance before heat treatment and decreased after heat treatment with safe. On the other hand, the samples with electroless plated Ni electrode had good properties of contact resistance against aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.88-91
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• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.