• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.591-592
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• 2006

Schottky diodes for Radio-frequency identification (RFID) tag integration on chip were designed and fabricated using Samsung electronics System LSI standard $0.18{\mu}m$ CMOS process. Schottky diodes were designed as interdigitated fingers array by CMOS layout design rule. 64 types of Schottky diode were designed and fabricated with the variation of finger width, length and numbers with a $0.6{\mu}m$ guard ring enclosing n-well. Titanium was used as Schottky contact metal to lower the Schottky barrier height. Barrier height of the fabricated Schottky diode was 0.57eV. DC current - voltage measurements showed that the fabricated Schottky diode had a good rectifying properties with a breakdown voltage of -9.15 V and a threshold voltage of 0.25 V.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.299-304
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• 2016

2차원 반도체 소재의 경우 물질종류마다 내포하고 있는 고유결함에 의해서 Fermi-Level Pinning 이 발생하여 이로 인한 Schottky Barrier transistor로 동작을 하게 되며, 이는 접합부에 Carrier Injection 정도와 Schottky Barrier을 통과하는 Tunneling 정도에 의해서 소자의 특성이 결정 된다. 본 연구에서는 시뮬레이션을 통하여 2차원 반도체인 $MoS_2$소자를 설계하고, S/D Doping에 따라 접촉 저항 개선 효과와 소자의 동작특성이 어떠한 영향을 미치는지 연구하여 최대 $250cm^2/V{\cdot}sec$의 field effect mobility 의 결과를 얻었다. 또한 S/D doping 에 따라 각 저항 성분의 영향을 분석하였으며 면저항 및 접촉 저항 둘 다 doping 농도가 증가함에 따라 감소하는 결과를 나타내며, S/D doping의 영향은 접촉저항에서 더 크게 나타났다. 더불어 2차원 반도체의 Resistance network model 을 제안하여 subthreshold 영역에서는 $R_{ic}$, saturation 영역에서는 $R_{ish}$ 가 전체저항에서 주요한 변수로 전체저항식에 포함되어야 한다는 것을 시뮬레이션을 통해서 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.146-146
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• 2010

일반적인 MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor)은 소스와 드레인의 형성을 위해서 불순물을 주입하고 고온의 열처리 과정을 거치게 된다. 이러한 고온의 열처리 과정 때문에 녹는점이 낮은 메탈게이트와 게이트 절연막으로의 high-k 물질의 사용에 제한을 받게된다. 이와 같은 문제점을 보완하기 위해서 소스와 드레인 영역에 불순물 주입공정 대신에 금속접합을 이용한 Schottky Barrier Tunnel Transistor (SBTT)가 제안되었다. SBTT는 $500^{\circ}C$ 이하의 저온에서 불순물 도핑없이 소스와 드레인의 형성이 가능하며 실리콘에 비해서 수십~수백배 낮은 면저항을 가지며, 단채널 효과를 효율적으로 제어할 수 있는 장점이 있다. 또한 고온공정에 치명적인 단점을 가지고 있는 high-k 물질의 적용 또한 가능케한다. 본 연구에서는 p-type SOI (Silicon-On-Insulator) 기판을 이용하여 Pt-silicide 소스와 드레인을 형성하고 전기적인 특성을 분석하였다. 또한 본 연구에서는 기존의 sidewall을 사용하지 않는 새로운 구조를 적용하여 메탈게이트의 사용을 최적화하였고 게이트 절연막으로써 실리콘 옥사이드를 스퍼터링을 이용하여 증착하였기 때문에 저온공정을 성공적으로 수행할 수 있었다. 이러한 게이트 절연막은 열적으로 형성시키지 않고도 70 mv/dec 대의 우수한 subthreshold swing 특성을 보이는 것을 확인하였고, $10^8$정도의 높은 on/off current ratio를 갖는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 대한기계학회논문집B
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• 제23권2호
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• pp.226-233
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• 1999

An experimental study has been performed on natural convection heat transfer with a rapid crust formation in the molten metal pool of a low Prandtl number fluid. Two types of steady state tests, a low and high geometric aspect ratio cases in the molten metal pool, were performed. The crust thickness by solidification was measured 88 a function of boundary surface temperatures. The experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool with a crust formation were compared with existing correlations. The experimental study has shown that the bottom surface temperature of the molten metal layer, in all experiments. is the major influential parameter in the crust formation, duo to the natural convection flow. The Nusselt number of the case without a crust formation in the molten metal pool is greater than that of the case with the crust formation at the same Rayleigh number. The present experimental results on the relationship between the Nusselt number and Rayleigh number In the molten metal pool match well with Globe and Dropkin's correlation. From the experimental results, a now correlation between the Nusslet number and Rayleigh number in the molten metal pool with the crust formation was developed as $Nu=0.0923(Ra)^{0.302}$ ($2{\times}10^4< Ra<2{\times}10^7$).

• 한국진공학회지
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• 제7권3호
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• pp.201-207
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• 1998

본 연구는 rf reactive magnetron sputtering 방법으로 증착한 ZnO 박막을 압전진동 자로 제작하였을 때 발생하는 금속전극과의 계면특성에 대해 조사하였다. 이때 ZnO 박막은 금속 아연 target을 산소분위기에서 sputtering하여 얻었다. 미리 얻은 최적성장조건으로 Cr/ZnO/Cr의 구조을 갖는 압전 진동자를 제작한 후, 금속전극과 ZnO 박막과의 계면특성을 분석하였다. 제작된 압전진동자는 I-V 측정, AES depth profile, SEM, C-V 측정등을 이용 하여 분석하였고, 이러한 분석 결과 금속전극과 ZnO 박막 사이에 $SiO_2$ 확산방지막을 쌓은 Cr/ $SiO_2$/ZnO/Cr의 구조로 ZnO 압전진동자를 제작했을 때 좋은 특성을 보임을 알 수 있었 다. 그리고, 이러한 사실은 제작된 진동자를 구동시키고 이에 대한 인가진동수에 따른 진동 변위를 측정해보므로써 확인할 수 있었다.

• 한국가구학회지
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• 제27권4호
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• pp.392-398
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• 2016

Wood-plastic composites (WPCs) composed of mainly wood flour and thermoplastics have attracted considerable attentions due to advantages of cost effectiveness, high durability, and microbial resistance. However, relatively poor fire resistance of WPCs from low thermal stability of wood and plastics prevents further uses. This study investigated the effect of expandable graphite (EG) and aluminium hydroxide (AH)/magnesium hydroxide (MH) on the properties of WPCs. The combined incorporation of both EG and metal hydroxide (i.e., AH or MH) into formulations leads to higher flexural modulus of filled composites compared to neat PP and WPC. In thermal properties, EG played an important role in improving thermal stability of filled composites by suppressing thermal decompositions of wood and PP. Moreover, EG showed better water absorption features. From this research, it can be said that EG and metal hydroxides have potentials as effective reinforcement, flame retardant, and moisture barrier.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1125-1128
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• 2002

Tantalum pentoxide (Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal diode in switching devices for active-matrix liquid-crystal displays. The MIM diode with very low threshold voltage and perfect symmetry was fabricated. High quality Ta$_2$O$\sub$5/ thin films were obtained by using an anodizing method. Rutherford backscattering spectroscopy, transmission electron microscope observations, auger electron spectroscopy, ellipsometry measurements, and electrical measurements, such as current - voltage(I-V) measurements were performed to investigate Ta$_2$O$\sub$5/ films and their reliability and indicated that the obtained TaOx thin films were reliable Ta$_2$O$\sub$5/ films for the applications. Furthermore, in this paper, we discuss the effects of top-electrode metals and annealing conditions. The conduction mechanism of the leakage current and the symmetry characteristics related to the Schottky emission and Poole-Frankel effect are also discussed using the results of electrical measurements and conduction barrier theory.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.12-13
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• 2012

An environmentally friendly method for in situ growth of Mg-Al hydrotalcite (HT) film on AZ31 magnesium alloy has been developed. The growth processes and corrosion resistance of the HT film were investigated. Then the HT film was surface modified by phytic acid solution to further improve the corrosion resistance. The film formation involves the dissolution of AZ31 substrate, adsorption of the ions from solution, nucleation of the precursor, followed by the dissolution of $Al^{3+}$, exchanging of $OH^-$ by $CO{_3}^{2-}$ and growth of the HT film. The HT film is very compact and acts as a barrier against $Cl^-$ attack in the early stage of corrosion, and then the surface of the film is dissolved gradually. This dense HT film can provide effective protection to the AZ31 alloy. The HT film with surface modification by phytic acid presents a self-healing feature and exhibits better corrosion resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.609-613
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• 2005

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. In this paper we will outline our progress towards developing such a low power consumption active-matrix flexible OLED ($FOLED^{TM}$) display. Our work in this area is focused on three critical enabling technologies. The first is the development of a high efficiency long-lived phosphorescent OLED ($PHOLED{TM}$) device technology, which has now proven itself to be capable of meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active matrix backplanes, and for this our team are employing poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing. We also present progress in operational lifetime of encapsulated T-PHOLED pixels on planarized metal foil and discuss PHOLED encapsulation strategy.