• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.234-238
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• 1995

In this parer, by means of adding nonsuperconductive phase sliver into YBCO matrix, the superconductivity of Melted Texture Growth (MTG) YBa$_2$Cu$_3$O$\_$7-x/ was improved remarkably. In order to eliminate the crack inthe YBCO and the weak linkin the grain boundary, Ag contents from 2wt% to 18Wt% were doped in the YBCO It was found that J$\_$c/ of YBCO increase with the increasing Ag content till 14 wt% over 14wt% of Ag content, the Jc tends to stable . The grain size of YBCO became fine when Ag was added in the YBCO and X-ray diffraction showed that the YBCO crystal prepared by the above technique had (001) orientation and growing plane of YBCO was a-b plane. Using Bens medel, the J$\_$c/ was calculated and the best result was J$\_$c/ 76000A$\textrm{cm}^2$(77K, 100Gs).

• Annual Conference of KIPS
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• 2003.05b
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• pp.1117-1120
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• 2003

DWDM(DensedWavelengthDivisionMultiplexing)은 광 파이버를 이용하여 기존의 통신보다 높은 대역폭(B/W)을 얻기 위한 기술로 여러 신호를 각각 다른 파장으로 변조해 하나의 Fiber 를 통해 전송하는 방식이며, 기본적으로 EDFA(Erbium Doped Fiber Amplifier), AWG(Arrayed Wave guide Grating), OADM(Optical Add/Drop Multiplexer) 등의 주요 부품과 여러 광 관련 부품들로 구성돼 있으며, 다수의 파장을 MUX(AWG)에서 다중화하고, 장거리 전송을 위해 OA(EDFA)에서 광신호를 증폭하게 된다 그리고 일부 특정 파장만 Add/Drop하기 위해 OADM이 놓이게 되며, 또한 선로(광섬유)의 손실을 보상하기 위해 필요한 구간에 리피터(EDFA)를 두어 광신호를 증폭 송신하며 수신단에서는 들어오는 여러 파장을 OA(EDFA)를 통해 증폭한 후 DEMUX(AWG)에서 역 다중화해 수신하게 된다. 이와 같은 DWDM방식을 이용한 Network는 Star, Mesh, Ring 등의 다양한 형태로 구성될 수 있으며, 초기에는 Point-to-Point 방식의 장거리 전송에 주로 사용돼 왔으나 Metro 구간의 Traffic 이 급격히 증가하면서 Metro- DWDM Network 이 부각되고 있어 본 논문에서는 현재 SK Telecom에서 상용화되고 있는 1,600G DWDM과 Metro-DWDM간의 망 구축의 최적화 방안을 연구해 본다.

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.192-195
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• 2007

A high-conversion efficiency, nanosecond pulsed optical parametric generation and amplification with repetition rate of 20 kHz based on a periodically poled MgO-doped stoichiometric lithium tantalate was presented. Pumped by a Q-switched $Nd:YVO_4$ laser at 1064 nm with a pumping power of 4.8W, the generated output power was 1.6W for the signal and idler waves, achieving a slope efficiency of 50%. Using a seed source at signal wave the amplified signal output-pulse energy reached $65{\mu}J$. The obtained maximum gain was 72.4 dB.

• Current Optics and Photonics
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• v.2 no.1
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• pp.79-84
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• 2018

We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.

• ETRI Journal
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• v.17 no.3
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• pp.17-43
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• 1995

We present a comprehensive derivation of the transport of holes involving an interacting two-valence-band system in terms of a generalized relaxation time approach. We sole a pair of semiclassical Boltzmann equations in a general way first, and then employ the conventional relaxation time concept to simplify the results. For polar optical phonon scattering, we develop a simple method th compensate for the inherent deficiencies in the relaxation time concept and apply it to calculate effective relaxation times separately for each band. Also, formulas for scattering rates and momentum relaxation times for the two-band model are presented for all the major scattering mechanisms for p-type GaAs for simple, practical mobility calculations. Finally, in the newly proposed theoretical frame-work, first-principles calculations for the Hall mobility and Hall factor of p-type GaAs at room temperature are carried out with no adjustable parameters in order to obtain a direct comparison between the theory and recent available experimental results, which would stimulate further analysis toward better understanding of the complex transport properties of the valence band. The calculated Hall mobilities show a general agreement with our experimental data for carbon doped p-GaAs samples in a range of degenerate hole densities. The calculated Hall factors show $r_H$=1.25~1.75 over all hole densities($2{\times}10^{17}{\sim}1{\times}10^{20}cm^{-3}$ considered in the calculations.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.135-139
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• 2016

I propose a vector passive harmonic mode-locked fiber laser based on topological insulator Bi2Se3 interacting with a fiber taper with a diameter of 7 μm. The particles of topological insulator are deposited uniformly onto the fiber taper with light pressure effect. By incorporating the fabricated saturable absorber into an Er-doped fiber laser cavity, stable mode-locked fiber is obtained. Due to the intense evanescent field of the fiber taper, strong confinement of light enhances the nonlinearity of the laser cavity, and passive harmonic mode-locking is performed. I observe a maximum harmonic mode-locking of 356th, corresponding to a frequency of 3.57 GHz. The pulse duration is 824 fs, and the full width at half maximum of the spectrum is about 8.2 nm. The polarization dependent loss of the saturable absorber is ~ 2.5 dB in the wavelength range of the C band. As the cavity contains no other polarization dependent device, the mode-locked laser is functioning in the vector state. The harmonic order vs pump power is investigated. To the best of our knowledge, this report is the highest frequency mode-locked fiber laser based on Bi2Se3. Experimental results indicate that the topological insulator Bi2Se3 functioning with a thin fiber taper is effective for vector harmonic mode-locking.

• Journal of Surface Science and Engineering
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• v.38 no.4
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• pp.150-155
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• 2005

Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was $5.36{\times}10^{-4}{\Omega}{\cdot}cm$ at 750 nm thickness, $200^{\circ}C$ substrate temperature and 125 w r.f power. All of the films showed over $85\%$ transmittance in the visible wavelength range.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.171-174
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• 2005

To improve the strength of glass is being studied in order to contribute to weight saving of flat panel displays. Generally, the strength achieved of glass-ceramics is higher as is the fracture toughness by the formation of a heterogeneous Phase inside glass. In this study, Ag-doped $45SiO_2-24CaO-24Na_2O-4P_2O_5$ glasses were irradiated to strengthen by crystallization using femto-second laser pulse. UV/VIS, Spectroscope, XRD, nano-indenter and SEM etc. irradiation of laser pulse without heat-treated samples was analyzed. Samples irradiated by laser had higher value$(4.4\~4.56{\ast}10-3Pa)$ of elastic modulus which related with strength of glass than values heat-treated samples and these are $1.2\~1.5$ times higher values than them of mother glass. This process can be applicable to the strengthening of thinner glass plate, and it has an advantage over traditional heat-treatment and ion-exchange method.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.398-403
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• 2003

Shallow $p^{＋}$ n junction was formed using a ULE(ultra low energy) implanter. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of post-annealing time and temperature following the rapid thermal annealing(RTA) treatments. We found that deactivation kinetics has two regimes such that the amount of deactivation increases exponentially with annealing temperature up to $850^{\circ}C$ and that it decreases linearly with the annealing temperature beyond that temperature. We believe that the first regime is kinetically limited while the second one is thermodynamically limited. We also observed "transient enhanced deactivation", an anomalous increase in sheet resistance during the early stage of annealing at temperatures higher than X$/^{\circ}C$. Activation energy for transient enhanced deactivation was measured to be 1.75-1.87 eV range, while that for normal deactivation was found to be between 3.49-3.69 eV.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.5
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• pp.245-248
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Ni/ITO (INI) multilayer films were deposited on the glass substrates with a reactive magnetron sputtering system without intentional substrate heating and then the influence of the Ni interlayer on the methanol gas sensitivity of ITO and INI film sensors were investigated. Although both ITO and INI film sensors have the same thickness of 100 nm, INI sensors have a sandwich structure of ITO 50 nm/Ni 5 nm/ITO 45 nm. The changes in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm were measured. It is observed that the INI film sensors show the higher sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the INI film sensor have the potential to be used as improved methanol gas sensors.