• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.139.1-139.1
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• 2016

Multiferroic materials are of great interest because of its potential applications in the design of devices combining magnetic, electronic and optical functionalities. Among various multiferroic materials, $BiFeO_3$(BFO) is known to be one of the intensively focused mainly due to the possibility of multiferroism at device working temperature (> $200^{\circ}C$). However, leakage current and weak polarization resulting from oxygen deficiency and crystalline defect should be resolved. Furthermore the magnetic ordering of pure BFO mainly prefers to have antiferromagnetic coupling. Up to now many attempts have been performed to improve the ferromagnetic and the ferroelectric properties of BFO by doping. In this work, we investigated the effects of Ni substitution on the multiferroism of bulk BFO. Four BFO samples (a pure BFO and three Ni-doped BFO's; $BiFe_{0.99}Ni_{0.01}O_3$, $BiFe_{0.98}Ni_{0.02}O_3$ and $BiFe_{0.97}Ni_{0.03}O_3$) were synthesized by the standard solid-state reaction and rapid sintering technique. The XRD results reveal that Ni atoms are substituted into Fe-sites and give rise to phase transition of cubic to rhombohedal. By using vibrating sample magnetometer and standard ferroelectric tester, the multiferroic properties at room temperature were characterized. We found that the magnetic moment of Ni-doped BFO turned out to be maximized for 3% of Ni dopant.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.204-208
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• 1991

In this paper, the radiation properties of a far-Infrared using a PTC thermistor, the $BaTiO_3$+1.63mol% $Al_2O_3$+3.75mol% $SiO_2$+1.25mol% $TiO_2$(1/3 $Al_2O_3+xSiO_2$+(1-x) $TiO_2$; total x: 6.67mol%) ceramics, in order to progress the grade resistivity characteristics, by adding an ethanol solution of $Mn(NO_3){\cdot}6H_2O$ was investigated. The ceramics was fabricated by wet-mill method. The sintering temperature read 1300-1350$[^{\circ}C]$ and the holding time was 3 hours. The quantity of $Sb_2O_3$ and $Al_2O_3$ for an activation of the far-infrared radiation in ceramics was doped. In sintering, R-T property was measured by varying the grade temperature. The anatase-lighting apparatus and microstructures by using XRD and SEM were observed. $Sb_2O_3$. oxides additive. affected the semiconducting and emissivity and MnO was devoted an increase of resistivity. The specimen which only $Sb_2O_3$ is added to was high appeared far-infrared emissivity and Mno was not affacted the far-infrared radiation. The ceramics shows that it is effective in the structure of the human bodies as organic bodies and can be applied as electron device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.555-560
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• 2014

In this paper, in order to develop outstanding Pb-free composition ceramics, the $Fe_2O_3$-doped ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ + 0.3 wt% $Bi_2O_3$ + x wt% $Fe_2O_3$ (x= 0~1.0 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effect of $Fe_2O_3$-doping on their microstructure and electrical properties were investigated. XRD diffraction pattern studies confirm that $Fe_2O_3$ completely diffused into the NKL-NST lattice to form a new stable soild solution with $Fe^{3+}$ entering the $Nb^{5+}$, $Sb^{5+}$ and $Ta^{5+}$ of B-site. And, phase structure of all the ceramics exhibited pure perovskite phase and no secondary phase was found in the ceramics. The ceramics doped with 0.6 wt% $Fe_2O_3$ have the optimum values of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient($k_p$) and mechanical quality factor($Q_m$) : $d_{33}$ = 233 [pC/N], $k_p$= 0.44, $Q_m$= 95. These results indicate that the ($Na_{0.525}K_{0.443}Li_{0.037}$)($Nb_{0.883}Sb_{0.08}Ta_{0.037}$)$O_3$ +0.3 wt% $Bi_2O_3$ + 0.6 wt% $Fe_2O_3$ ceramic is a promising candidate for lead-free piezoelectric ceramics.

• Progress in Superconductivity
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• v.10 no.2
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• pp.87-91
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• 2009

Fluorine-doped $SmFeAsO_{1-x}F_x$ single crystals with the nominal value of x=0.2 were grown at $1350-1450^{\circ}C$ under the pressure of 3.3 GPa by using the self-flux method. Plate-shaped single crystals in the range of a few-150 ${\mu}m$ in their lateral size were obtained. The detailed crystal structure was analyzed by using the x-ray diffractometry. Superconducting transition temperature, determined by the resistive transition, of a single crystal was about 49 K with a narrow resistive transition width of ${\sim}1$ K. A relatively sharp transition, a low residual resistivity, and a large residual resistivity ratio compared with those reported for $REFeAsO_{1-x}F_x$(RE=Sm, Nd) single crystals indicate the high quality of our single crystals.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.42-45
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• 2012

The mechanical behavior and microstructural evolution during high temperature tensile deformation of recrystallized Ni3Al polycrystals doped with boron were investigated as functions of initial grain size, tensile strain rate and temperature. In order to obtain more precise information on the deformation mechanism, tensile specimens were rapidly quenched immediately after deformation at a cooling rate of more than $2000Ks^{-1}$, and were then observed by transmission electron microscopy (TEM). Mechanical tests in the range of 923 K to 1012 K were carried out in a vacuum of less than $3{\times}10^{-4}$ Pa using an Instron-type machine with various but constant cross head speeds corresponding to the initial strain rates from $1.0{\times}10^{-4}$ to $3.1{\times}10^{-5}s^{-1}$. After heating to deformation temperature, the specimen was kept for more than 1.8 ks before testing. The following results were obtained: (1) Flow behavior was affected by initial strain size; with decreasing initial grain size, the level of a stress peak in the true stress-true strain curve decreased, the steady state region was enlarged and elongation increased. (2) On the basis of TEM observation of rapidly quenched specimens, it was confirmed that dynamic recrystallization certainly occurred on deformation of fine-grained ($3.3{\mu}m$) and intermediate-grained ($5.0{\mu}m$) specimens at an initial strain rate of $3.1{\times}10^{-5}s^{-1}$ and at 973 K. (3) There were some dislocation-free grains among the new recrystallized grains. The obtained results suggest that both dynamic recrystallization and grain boundary sliding are operative during high temperature deformation.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• Journal of Korean Society on Water Environment
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• v.22 no.6
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• pp.996-1003
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• 2006

The absorption characteristics of powdered activated carbon doped by transition-metal nanoparticles were investigated to enhance the remove efficiencies of $TCOD_{Mn}$ and Color from the flexo-inks wastewater. According to the adsorption dynamics of PAC and MPAC, the optimal dosage of activated-carbon adsorbents was 3 g/L under the reaction conditions of pH6.0, 30 mill of reaction time, 240 rpm of mixing intensity. The removal efficiencies by the optimal dosages were maximized as 19% $TCOD_{Mn}$, 57% Color for PAC and 88% $TCOD_{Mn}$, 95% Color for MPAC. Freundlich indexes of isotherm absorption were estimated as follows: i) For PAC, k=-8.11, 1/n=2.98, r=0.91 in the raw water, and k=0.14, b/n=0.75, r=0.96 in the biological treatment water, ii) For MPAC, k=2.69, 1/n=0.21, r=0.80 in the raw water, and k=0.74, 1/n=1.17, r=0.95 in the biological treatment water. MPAC (Powdered activated carbon doped by transition-metal nanoaprticles) was very effective in the removal of organics from the raw water and biological treatment water, as Freundlich indexes of 1/n for both types of water were estimated less than 2.0.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.124-129
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• 2013

In this paper, we manufactured the regenerated FBG by the thermal annealing of seed FBG based on UV irradiation. The writing conditions of regenerated FBGs were investigated in four types of optical fiber. FBGs written in $H_2$-free fiber were erased and not regenerated during the thermal annealing. FBG written in $H_2$ loaded Boron co-doped fiber was erased at the temperature of about $580^{\circ}C$ and regenerated about $590^{\circ}C$. However, the extinction of regenerated FBG started at the temperature over $900^{\circ}C$ and then FBG disappeared out. FBG written in $H_2$ loaded Ge high doped fiber was erased and regenerated around the temperature of $800^{\circ}C$ and maintained until the end of the thermal annealing. The reflection of the regenerated FBG was decreased about 12 dB and the center wavelength of the regenerated FBG was shifted about 0.7 nm compared with that of the seed FBG. The thermal characteristics of the regenerated FBG were analyzed by reheating from room temperature to $980^{\circ}C$. As results, the regenerated FBG had survived without a decrease of reflection and the thermal sensitivity was $15pm^{\circ}C$.