• Journal of the Korean Ceramic Society
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• v.35 no.4
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• pp.364-370
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• 1998

Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

• Clean Technology
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• v.17 no.1
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• pp.78-82
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• 2011

For effectively photochemical hydrogen production, P (negative semiconductor) and B (positive semiconductor) ions (0.1, 0.2, 0.5, and 1.0 mol%) incorporated $TiO_2$ (P- and B-$TiO_2$) nanometer sized particles were prepared using a solvothermal method as a photocatalyst. The characteristics of the synthesized P- and B-$TiO_2$ photocatalysts were analyzed by X-ray Diffraction (XRD), Transmission electron microscopy (TEM), W-visible spectroscopy (UV-Vis), and Photoluminescence spectra (PL). The evolution of $H_2$ from methanol/water (1:1) photo-splitting over B-$TiO_2$ photocatalysts was enhanced compared to those over pure $TiO_2$ and P-$TiO_2$ photocatalysts; 0.42 mL of $H_2$ gas was evolved after 10 h when 0.5 g of a 1.0 mol% B-$TiO_2$ catalyst was used.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.559-562
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• 2002

본 논문에서는 최근 제한적으로 사용이 승인된 UWB(초광대역： Ultra-Wideband) 통신을 AWGN 하에서 다중 접속을 고려하지 않은 단일 사용사일 경우로 가정시, M진 값이 변화함에 따른 에러율과 성능 개선 기법으로 BCH를 채용시의 에러율을 비교 분석하였다. 기존에 연구되어 오던 변조로 PAM(Pulse Amplitude Modulation)과 PPM(Pulse Position Modulation)방식을 비교하였으며 에러율 $10^{-6}$을 기준으로 M=2, 4일 경우 PAM이 PPM보다 약 E$_{b}$/N$_{o}$ =3~4［dB］, M=8 이상의 경우 PPM이 약 E$_{b}$/N$_{o}$ =9［dB］, M=16일 경우 약 E$_{b}$/N$_{o}$ =15［dB］정도 성능이 우수하였다. AWGN 채널 하에서 에러 정정 부호인 BCH(15,7)를 도입하였을 경우 에러율 $10^{-6}$을 기준으로 PAM방식은 약 E$_{b}$/N$_{o}$ 가 약 1［dB］, PPM 방식은 M=2, 4일 경우 약 E$_{b}$/N$_{o}$ =1~1.5［dB］정도 개선되었다.

• Communications of the Korean Mathematical Society
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• v.9 no.4
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• pp.803-808
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• 1994

Since L$\ddot{o}$b's announcement of his solution to Henkin's problem (L$\ddot{o}$b (1954, 1955)) there has been successful and fruitful research on provability logic tied up with modal logic. Specially, L$\ddot{o}$b's Theorem is of far-reaching significance in the following meta-mathematical and philosophical sense.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.677-680
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• 2003

The effect of $B_2O_3$ addition on the sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. Temperature coefficient of resonance frequency(${\tau}_f$) changes to a positive value with increasing the amount of $B_2O_3$ because of the increased amount of rutile phase. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the rutile or second phase. When 6.19 mol.% of $B_2O_3$ added and sintered at $900^{\circ}C$ for 5h, it exhibits ${\epsilon}_r$ =23.5, $Q{\times}f_o$= 67,500 GHz, and ${\tau}f=-1.42ppm/^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.556-560
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• 2007

In this study, both structural and microwave dielectric properties of the $Mg_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1400^{\circ}C{\sim}1500^{\circ}C$. The bulk density and quality factor of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were increased with increasing sinterning temperature in the range of $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased the sintering temperature of above $1450^{\circ}C$. The dielectric constant of the $Mg_5Ta_4O_{15}$ ceramics was increased continuously with increasing sintering temperature. And the dielectric constant of the $Mg_5Nb_4O_{15}$ ceramics was increased in as the sintering temperature increasesfrom $1400^{\circ}C{\sim}1450^{\circ}C$ but was decreased at the temperatures above $1475^{\circ}C$. In the case of the $Mg_5Ta_4O_{15}\;and\;Mg_5Nb_4O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.33-33
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• 2007

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.37-43
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• 1999

Co-firing incompatibility between the low temperature sinterable Glass/ceramic and Ag-thick film was studied. The dielectric material, which has been developed for microwave frequency applications, consists of $SiO_2-TiO_2-Bi_2O_3$-$Bi_2O_3$-RO system(RO:BaO -CaO-SrO) crystallizable glass and $Al_2O_3$as a ceramic filler. The large camber in the sintered specimen and cracks at the Ag-film under the influence of the camber occurred due to the difference of densification rate between the ceramic sheet and the Ag-film $B_2O_3$addition to the Glass/ceramic mixture reduced the severe camber. The cambers decreased with increasing the $B_2O_3$ content, and completely disappeared with 14 vol% $B_2O_3$addition. With additions of $B_2O_3$, $\varepsilon_{r}$ decreased abruptly, Q$\times$f value increased largely and the $\tau_f$ value of the material quickly shifted to positive one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.38-42
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• 2005

B$_2$O$_3$ added Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (BBMN) ceramics were not sintered below 900 $^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at 850 $^{\circ}C$. The amount of the $Ba_2$B$_2$O$_{5}$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B$_2$O$_3$ inhibiting the reaction between B$_2$O$_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and B$_2$O$_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density, the dielectric constant ($\varepsilon$$_{r}$) and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf = 21500 GHz, $\varepsilon$$_{r}$ = 31 and temperature coefficient of resonance frequency($\tau$$_{f}$) = 21.3 ppm/$^{\circ}C$ were obtained for the Ba(Mg$_{1}$3/Nb$_{2}$3/)O$_3$+2.0 mol%B$_2$O$_3$+10.0 mol%CuO ceramic sintered at 875 $^{\circ}C$ for 2 h.h.2 h.h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.838-841
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• 2004

[ $B_2O_3$ ] added $Ba(Mg_{1/3}Nb_{2/3})O_3$ (BBMN) ceramics were not sintered below $900^{\circ}C$. However, when CuO was added to the BBMN ceramic, it was sintered even at $850^{\circ}C$. The amount of the $Ba_2B_2O_5$ second phase decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the $B_2O_3$ inhibiting the reaction between $B_2O_3$ and BaO. Moreover, it is suggested that the solid solution of CuO and $B_2O_3$ might be responsible for the decrease of the sintering temperature of the specimens. A dense microstructure without pores was developed with the addition of a small amount of CuO. However, a porous microstructure with large pores was formed when a large amount of CuO was added. The bulk density the dielectric constant $({\varepsilon}_r)$ and the Q-value increased with the addition of CuO but they decreased when a large amount of CuO was added. The variations of those properties are closely related to the variation of the microstructure. The excellent microwave dielectric properties of Qxf=21500 GHz, ${\varepsilon}_r=31$ and temperature coefficient of resonance frequency$({\tau}_f)=21.3\;ppm/^{\circ}C$ were obtained for the $Ba(Mg_{1/3}Nb_{2/3})O_3+2.0\;mol%B_2O_3+10.0$ mol%CuO ceramic sintered at $875^{\circ}C$ for 2h.