• 전자공학회논문지A
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• 제28A권5호
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• pp.380-386
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• 1991

Hydrogen plasma-assisted epitaxial(PAE) growth of GaAs/Si and GaAs/Ge/Si with Ge buffer layer has been investigated. By means of photoluminescence, Nomarski microscopu, and $\alpha$-step, it could be known that GaAs on Si with Ge buffer layer has better crystalline quality than GaAs on Si without Ge buffer layer. The stoichiometry of GaAs layer on Si was confirmed by the depth profile of Auger electron spectroscope (AES). Also the native oxide(SiO$_2$) layer on Si substrate was plama-etched and the removal of the oxide layer was confirmed by AES. Photoluminescence peak wavelength of GaAs/Ge/Si with Ge buffer of 1\ulcorner thickness and GaAs growth rate of 160$\AA$/min was 8700$\AA$and FWHM was 12$\AA$.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.565-566
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• 2006

In this work, We study electrical characterization of $HfO_2$/Hf/Si films grown by Atomic Layer Deposition(ALD). Through AES(Auger Electron Spectroscopy), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf metal layer in our structure effectively suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.700-706
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• 2001

In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

• 전기전자학회논문지
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• 제21권3호
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.31-34
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• 2002

For the mold die sticking mechanism, the major explanation is that the silica as a filler in EMC (epoxy molding compound) wears die surface to be roughened, which results in increase of adhesion strength. As the sticking behavior, however, showed strong dependency on the EMC models based on the experimental results from different semiconductor manufacturers, chemisorption or acid-base interaction is apt to be also functioning as major mechanisms. In this investigation, the plasma source ion implantation (PSII) using $O_2, N_2$, and $CF_4$ modifies sample surface to form a new dense layer and improve surface hardness, and change metal surface condition from hydrophilic to hydrophobic or vice versa. Through surface energy quantification by measuring contact angle and surface ion coupling state analysis by Auger, major governing mechanism for sticking issue was figured out to be a complex of mechanical and chemical factors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.455-459
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• 2002

I have investigated the effects of annealing on a polymeric $\alpha-C_3N_{4.2}$ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared spectroscopy, Auger electron spectroscopy and x-ray diffraction(XRD). Notably, XPS studies of the film composition before and after annealing demonstrate that the nitrogen composition in $\alpha-C_3N_{4.2}$ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~43%. XPS analysis also shows that the nitrogen composition in the annealed films without polymeric $\alpha-C_3N_{4.2}$ was reduced from 35% to 17%. Furthermore the concentration of the sp$^3$bonded phase increased with the increment of the annealing temperature.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.447-452
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• 1998

The selective dry etching of GaAs to Al\ulcornerGa\ulcornerAs using $BCI_3/SF_6$ gas mixture in electron cyclotron resonance(ECR) plasma is investigated. A selectivity of GaAs to AlGaAs of more than 100 and maximum etch rate of GaAs are obtained at a gas ratio $SF_6/BCI_3+SF_6$ of 25%. We verified the formation of $AlF_3$ on $Al_{0.25}Ga_{0.75}As$from the Auger spectra which enhanced the etch selectivity. In order to investigate surface damage of AlGaAs caused by ECR plasma, we performed a low temperature photoluminescence(PL) measurement as a function of RF power. As the RF power. As the RF power increases, the PL intensity decreases monotonically from 50 to 100 Wand then repidly decreases until 250 W. This behavior is due to surface damage by plasma treatment. This dry etching technique using $BCI_3/SF_6$ gas mixture in ECR plasma is suitable for gate recess formation on the GaAs based pseudomorphic high electron mobility transistor(PHEMT)

• 한국자기학회지
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• 제8권1호
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• pp.6-12
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• 1998

플라즈마 이온주입 장치를 이용하여 $\alpha$-Fe foil에 질소 이온을 주입하여 질화철 결정상을 만들었으며, 이때 질소 이온 주입시간을 15분(FEN15)과 30분 (Fe30)으로 처리되었다. 오제 전자 분광법(Auger electron spectroscopy : AES)을 이용하여 측정한 주입된 질소 이온의 깊이는 사편 FeN15와 FeN30에서 각각 12000$\AA$과 40000$\AA$으로 나타난다. 진동 시편 자력계(vibrating sample magnetometer : VSM)측정결과 as-implanted 각각의 시편은 포화자화 값이 순수한 $\alpha$-Fe foil 보다 증가되었으며, 이는 $\alpha$'-Fe8N 또는 $\alpha$'-Fe16N2의 결정구조가 그원인으로 판단된다. 따라서 본 연구는 플라즈마 이온주입 방법으로 제작된 질화철에서 부분적인 $\alpha$'또는 $\alpha$'의 졀정구조 형성 가능성을 확인할 수 있었다.

• 분석과학
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• 제6권2호
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• pp.149-156
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• 1993

고온고압하(高溫高壓下)에서의 Ni-C 액상(液相) 중에서 구상흑연입자(球狀黑鉛粒子)의 형성과정을 밝히기 위한 실험적인 관찰을 행하였다. 구상 흑연입자는 다이아몬드 안정역에서 유지하는 동안 안정한 형태로 생성되어 성장하였다. 이 때의 구상 흑연입자는 다결정형태(多結晶形態)가 아닌 연속적으로 성장한 많은 결함을 포함하는 단결정형태(單結晶形態)(fullerene형(型))를 하고 있었다. 표면분석기(表面分析機)(Auger electron spectroscope) 및 고분해능(高分解能) 투과전자현미경(透過電子顯微鏡)을 이용한 분석결과 구상 흑연 입자는 $sp^2$ 및 $sp^3$ 결합을 갖는 탄소원자가 혼재(混在)되어 있는 결정상태임이 밝혀졌다. 다이아몬드 안정역으로부터 흑연 안정역으로 압력이 감소함에 따라 흑연입자의 모양이 구형(球形)에서 평판형(平板形)으로 연속적으로 변해가는 것이 관찰되었다. 다이아몬드 안정역에서 형성되는 구상 흑연입자는 $sp^3$ 결합을 가지는 탄소 원자의 안정적인 존재 때문인 것으로 해석되었다. 많은 결함을 포함하는 큰 크기의 fullerene형(型) 구상 흑연입자가 연속적으로 성장하는 사실은 Kroto가 예측한 대형 fullerene의 성장과정을 실험적으로 뒷받침해 주는 결과라 생각한다.